Diodes DMP4047SSD User Manual
40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
R
(BR)DSS
-40V
DS(on)
45mΩ @ V
55mΩ @ VGS = -4.5V
= -10V
GS
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(ON)
ideal for high efficiency power management applications.
Applications
Backlighting
DC-DC Converters
Power Management Functions
NEW PRODUCT NEW PRODUCT
SO-8
G1
S2
G2
Top View
I
D
= +25°C
T
A
-6.5A
-5.9A
Top View
Pin-Out
Features
100% Unclamped Inductive Switch (UIS) test in production
Low on-resistance
Fast switching speed
Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D1S1
D1
D2
G1
D2
D1
S1
Equivalent Circuit
DMP4047SSD
e3
D2
G2
S2
Ordering Information (Note 4 & 5)
Part Number Compliance Case Packaging
DMP4047SSD-13 Standard SO-8 2,500/Tape & Reel
DMP4047SSDQ-13 Automotive SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8 5
YY WW
1 4
= Manufacturer’s Marking
P4047SD = Product Type Marking Code
.
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
DMP4047SSD
Document Number DS36353 Rev. 3 - 2
1 of 5
www.diodes.com
September 2013
© Diodes Incorporated
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = -10V
Continuous Drain Current (Note 7) VGS = -4.5V
Maximum Body Diode Continuous Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Thermal Characteristics (@T
Total Power Dissipation (Note 6)
NEW PRODUCT NEW PRODUCT
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
DMP4047SSD
V
DSS
V
GSS
T
Steady
State
t < 10s
Steady
State
t < 10s
= +25°C, unless otherwise specified.)
A
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
I
D
I
D
I
D
I
D
I
S
I
DM
Characteristic Symbol Value Units
= +25°C
T
A
TA = +70°C
Steady state
t < 10s 59
= +25°C
T
A
TA = +70°C
Steady state
t < 10s 43
P
R
P
R
R
T
J, TSTG
θJA
θJA
θJC
D
D
-40 V
±20 V
-5.1
-4.1
-6.5
-5.2
-4.6
-3.7
-5.9
-4.7
A
A
A
A
-2.5 A
-40 A
1.3
0.8
98
1.8
1.1
W
°C/W
W
71
°C/W
11.8
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
-40
-1 µA
±100 nA
V
VGS = 0V, ID = -250μA
VDS = -40V, VGS = 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
V
GS(th
R
DS (ON)
V
SD
-1.0
33 45
40 55
-3.0 V
mΩ
-0.75 -1.2 V
VDS = VGS, ID = -250μA
= -10V, ID = -4.4A
V
GS
V
= -4.5V, ID = -3.7A
GS
VGS = 0V, IS = -3.9A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Gate Resistance RG
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Qg
Qg
Gate-Source Charge Qgs
Gate-Drain Charge Qgd
Turn-On Delay Time tD(on)
Turn-On Rise Time tr
Turn-Off Delay Time tD(off)
Turn-Off Fall Time tf
Body Diode Reverse Recovery Time trr
Body Diode Reverse Recovery Charge Qrr
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
1154
84
66
12.6
10.6
21.5
2.2
3.3
8.7
19.6
34.9
25.5
9.61
3.3
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
= -20V, VGS = 0V,
V
DS
f = 1.0MHz
V
= 0V, VGS = 0V, f = 1MHz
DS
= -20V, ID = -4.9A
V
DS
V
= -20V, I
DS
= 4.5V, RG = 1Ω
V
GS
= -3.9A, di/dt = 100A/μs
I
F
= -3.9A
D
DMP4047SSD
Document Number DS36353 Rev. 3 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
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