Diodes DMP4047LFDE User Manual

DMP4047LFDE

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

D max

TA = +25°C

-6A

-4.9A

V

R

(BR)DSS

-40V

Package

DS(ON) max

33mΩ @ V

50m @ VGS = -4.5V

= -10V

GS

U-DFN2020-6

Type E

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• General Purpose Interfacing Switch

• Load Switching

ADVANCE INFORMATION

• Battery Management Application

• Power Management Functions

Pin1

U-DFN2020-6 Type E

Bottom View

Features

• 0.6mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low Gate Threshold Voltage

• Low On-Resistance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-DFN2020-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

• Weight: 0.0065 grams (approximate)

Pin Out

Bottom View

2

UL Flammability Classification Rating 94V-0

per MIL-STD-202, Method 208

e4

D

G

S

Equivalent Circuit

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Quantity per reel

DMP4047LFDE-7 PE 7 3,000

DMP4047LFDE-13 PE 13 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

PE

DMP4047LFDE

D

atasheet number: DS35777 Rev. 5 - 2

PE = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

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© Diodes Incorporated

July 2012

θ

)

g

g

g

)

r

)

r

r

DMP4047LFDE

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current

Steady

State

t<5s

Steady

State

t<5s

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

-40 V

±20 V

-3.3

-2.6

-5.3

-4.2

-6.0

-4.8

-9.5

-7.6

A

A

A

A

-40 A
3 A

Thermal Characteristics

Characteristic Symbol Value Units

T

= +25°C

ADVANCE INFORMATION

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<5s 76

T

= +25°C

A

TA = +70°C

Steady state

t<5s 25

P

R

P

R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

0.7

0.42

W

180

°C/W

2.1

1.3

W

58

°C/W

10.2

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-40 — — V
— —
— —

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-1.0 — -2.2 V
—
—

|

—

26 33
36 50

5.2 — S

0.75 1.2 V
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

Q
Q

t

D(on

t

D(off

Q

s
d

t

t

f

t

r

r

— 1382 —
— 103 —
— 81 —
— 7.7 —
— 11.2 —
— 23.2 —
— 3.3 —
— 3.9 —
— 18.4 —
— 28.2 —
— 38.8 —
— 28.6 —
— 15.4 —
— 5.4 —

1 µA

±100 nA

mΩ

pF
pF
pF


nC
nC
nC
nC
ns
ns
ns
ns
ns
nC

VGS = 0V, ID = 250A
VDS = -40V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A
V

= -10V, ID = -4.4A

GS

V

= -4.5V, ID = -3.7A

GS

VDS = -15V, ID = -4.4A
VGS = 0V, IS = -3.9A

V

= -20V, VGS = 0V,

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

= -20V, ID = -4.9A

V

DS

= -20V, I

V

DS

= 4.5V, RG = 1

V

GS

= -3.9A, di/dt = 100A/s

I

F

= -3.9A

D

DMP4047LFDE

D

atasheet number: DS35777 Rev. 5 - 2

2 of 6

www.diodes.com

July 2012

© Diodes Incorporated