Diodes DMP4025LSS User Manual

A

f

Product Summary

V

R

(BR)DSS

-40V

25mΩ @ V

45mΩ @ VGS = -4.5V

DS(on)

max

= -10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.

ADVANCE INFORMATION

• Motor control

• Backlighting

• DC-DC Converters

• Printer equipment

SO-8

Top View

Diodes Incorporated

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

max (A)

I

D

T

= 25°C

A

(Notes 6)

-8.0

-6.0

• Low R

• Fast switching speed – Minimizes switching losses

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– Minimizes conduction losses

DS(on)

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

Pin-Out Top View Device symbol

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DMP4025LSS

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP4025LSS-13 P4025LS 13 12 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

4. For packaging details, go to our website at http://www.diodes.com

2. See http://www.diodes.com for more info rmation about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.

Marking Information

DMP4025LSD

Document Number: DS35936 Rev: 1 - 2

P4025LS

YY WW

www.diodes.com

= Manufacturer’s Marking
P4025LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 10 = 2010)
WW = Week (01 - 53)

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DMP4025LSS

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current
Continuous Source Current (Body diode) (Notes 7)
Pulsed Source Current (Body diode) (Notes 7)

Thermal Characteristics @T

ADVANCE INFORMATION

Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Notes 8)

Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on minimum recommended FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

6. Same as note (2), except the device is surface mounted on 25mm X 25mm X 1.6mm FR4 PCB.

7. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300µs – pulse width by maximum junction temperature.

8. Thermal resistance from junction to solder-point (at the end of the drain lead).

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

V

DSS

V

(Notes 6)

= -10V

V

GS

V

= -10V

GS

Characteristic Symbol Value Unit

TA = 70°C (Notes 6)
(Notes 5) -6.0
(Notes 7)

= 25°C unless otherwise specified

A

(Notes 5)
(Notes 6) 2.4
(Notes 5)
(Notes 6) 52

GSS

ID

IDM

I

I

SM

P

R
R

T

J, TSTG

S

θJA

θJL

D

-40

±20

-8.0

-6.9

-30

-8.0

-30

1.52

82

48.85

-55 to +150 °C

V

A

W

°C/W

DMP4025LSD

Document Number: DS35936 Rev: 1 - 2

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P

P

T

R

T P

O

R

T

R

T T

HER

R

TANC

Thermal Characteristics

ADVANCE INFORMATION

100

Single Pulse

°

R = 82C/W

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

θ

(W)

IWE

90
80
70
60

50

ANSIEN

40
30

EAK
,

20

(PK)

10

0

0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

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Diodes Incorporated

DMP4025LSS

1

D = 0.7

E

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 83°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)
Fig. 2 Transi ent Thermal Resistance

DMP4025LSD

Document Number: DS35936 Rev: 1 - 2

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June 2012

© Diodes Incorporated