Diodes DMP4025LK3 User Manual

Product Summary

BV

R

DSS

-40V

25mΩ @ V

45mΩ @ VGS = -4.5V

DS(on)

max

= -10V

GS

T

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

 Motor control

ADVANCE INFORMATION

 Backlighting

 DC-DC Converters

 Printer equipment

TO252

Top View

I

max

D

= +25°C

A

(Note 6)

-8.6A

-7.0A

Top View

Pin Out

DMP4025LK3

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Fast Switching Speed

 Low Input/Output Leakage

 Lead-Free Finish; RoHS compliant (Note 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TO252 (DPAK)

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals Connections: See diagram below

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.315 grams (approximate)

Device symbol

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP4025LK3-13 P4025L 13 16 2,500

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMP4025LK3

Document Number:35938 Rev. 3 - 2

YYWW

P4025L

= Manufacturer’s Marking P4025L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 10 = 2010) WW = Week (01 - 53)

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March 2014

Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Body diode) (Notes 7)

Pulsed Source Current (Body diode) (Notes 7)

Thermal Characteristics (@T

ADVANCE INFORMATION

Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case (Notes 6)

Thermal Resistance, Junction to Lead (Notes 8)

Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on minimum recommended FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

6. Same as note (5), except the device is surface mounted on 25mm X 25mm X 1.6mm FR4 PCB.

7. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300µs – pulse width by maximum junction temperature.

8. Thermal resistance from junction to solder-point (at the end of the drain lead).

= +25°C unless otherwise specified.)

A

Characteristic Symbol Value Units

V

DSS

V

GSS

(Notes 6)

V

= -10V

GS

V

= -10V

GS

Characteristic Symbol Value Unit

TA = +70°C (Notes 6)

(Notes 5) -6.7

(Notes 7)

= +25°C unless otherwise specified.)

A

(Notes 5)

(Notes 6) 2.78

(Notes 5)

(Notes 6) 45

ID

IDM

I

SM

P

R

T

J, TSTG

S

θJA

θJC

θJL

D

-40

20

-8.6

-6.9

-35

-8.6

-35

1.7

74

7.1

1.43

-55 to +150 °C

DMP4025LK3

Document Number:35938 Rev. 3 - 2

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V

A

W

°C/W

March 2014

P

OWER

PATIO

P

E

T

R

S

ENT P

OIWE

R

T

R

T T

HER

R

TANC

Thermal Characteristics

1.8

1.6

1.4

N (W)

1.2

1

DISSI

0.8

0.6

,

D

0.4

0.2

0

ADVANCE INFORMATION

0 20406080100120140160

T , AMBIENT TEMPERATURE (C)

A

Figure 1. Power Dissipation vs. Ambient Temperature

E

1

D = 0.7

D = 0.5

D = 0.3

DMP4025LK3

100

90

(W)

80

70

60

I

50

AN

40

30

AK

,

20

(PK)

10

0

0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)

Figure 2. Single Pulse Maximum Power Dissipat ion

Single Pulse R = 70C/W



JA

R = r * R



JA(t) (t) JA

T - T = P * R

JA JA(t)





ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec)

Figure 3. Transient Ther mal Resistance

D = 0.9

R (t) = r(t) * R



JA JA

R = 70°C/W



JA

Duty Cycle, D = t1/ t2

DMP4025LK3

Document Number:35938 Rev. 3 - 2

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March 2014

D

RAIN C

U

R

REN

T

R

CUR

RENT

Electrical Characteristics (@T

= +25°C unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 9)

Forward Transconductance (Notes 9 & 10)

Diode Forward Voltage (Note 9)

V

GS(th)

R

DS (ON)

V

g



fs

SD

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

ADVANCE INFORMATION

Gate Resistance

Total Gate Charge (Note 11)

Gate-Source Charge (Note 11)

Gate-Drain Charge (Note 11)

Turn-On Delay Time (Note 11)

Turn-On Rise Time (Note 11)

Turn-Off Delay Time (Note 11)

Turn-Off Fall Time (Note 11)

Notes: 9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.

10. For design aid only, not subject to production testing.

11. Switching characteristics are independent of operating junction temperatures.

C

iss

C

oss

C



rss

R

g

Q



g

Q



g

Q

gs

Q



gd

t

D(on)

t

r

t

D(off)

t



f

-40

 

-0.8 -1.3 -1.8 V







 

-1 µA

100

18 25

30 45

16.6



-0.7 -1 V

1643

179

128

6.43

14

33.7

5.5

7.3

6.9

14.7

53.7

30.9







DMP4025LK3

V

ID = -250µA, VGS = 0V

VDS = -40V, VGS = 0V

nA

VGS = 20V, VDS = 0V

ID = -250µA, VDS = VGS

V

= -10V, ID = -3A

mΩ

pF

nC

ns

GS

V

= -4.5V, ID = -3A

GS

S

VDS = -5V, ID = -3A

IS = -1A, VGS = 0V

VDS = -20V, VGS = 0V f = 1MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

VGS = -4.5V

V

= -10V

GS

V

= -20V, VGS = -10V

DD

= -3A

I

D

V

DS

= -3A

I

D

= -20V

Typical Characteristics

30

25

(A)

20

15

10

D

-I ,

5

0

0 0.5 1 1.5 2

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 4. Typical Output Characteristic

DMP4025LK3

Document Number:35938 Rev. 3 - 2

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30

V = -5V

DS

25

(A)

20

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

T = 125°C

A

15

AIN

10

D

-I , D

5

0

01 2 3 45

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 5. Typical Transfer Characteristic

March 2014

R

OUR

CE ON-R

TANC

R

OUR

CE ON-R

TANC

7

R

OUR

C

R

OUR

CE ON-R

TANC

G

H

R

H

O

G

OUR

CE C

U

R

T

DMP4025LK3

0.05



E ( )

0.04



E ( )

V = -10V

GS

0.04

0.03

ESIS

0.03

V = -4.5V

GS

ESIS

0.02

V = -10V

AIN-S

GS

0.01

, D

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN-SOURCE CURRENT (A)

D

Figure 6. Typical On-Resistance

ADVANCE INFORMATION

vs. Drain Cur rent and Gate Voltage

1.

AIN-S

0.01

, D

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN CURRENT (A)

D

Figure 7. Typical On-Resistance

vs. Drain Current and Temperature

0.06

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A



1.5

V = -10V

GS

I = -20A

D

E ( )

0.05

E

1.3

V = -4.5V

GS

I = -10A

1.1

AIN-S

D

0.04

ESIS

0.03

V = -4.5V

GS

I = -10A

D

, D

0.9

DSON

0.7

ON-RESISTANCE (NORMALIZED)

AIN-S

, D

0.02

0.01

V = -10V

GS

I = -20A

D

0.5

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Figure 8. On- Resistance Variation with Temperature

2.0

E (V)

DSON

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Figure 9. On-Resistance Variation with Temperature

20

18

16

1.5

LTA

LD V

I = -1mA

ES

1.0

I = -250µA

D

ATE T

0.5

GS(TH)

-V ,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Figure 10. Gate Threshold Variation vs. Ambient Temperature

(A)

EN

14

12

T = 25°C

A

10

8

6

S

-I , S 4

2

0

0.2 0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 11. Diode Forward Voltage vs. Current

DMP4025LK3

Document Number:35938 Rev. 3 - 2

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March 2014

C, CAPACITANC

F

GE CUR

R

N

T

GAT

OUR

C

OLTAG

R

CUR

RENT

10,000

)

1,000

E (p

100

10

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

DS

C

iss

C

oss

C

rss

Figure 12. Typical Total Capacitance

ADVANCE INFORMATION

10

V = -20V

8

E (V)

6

E V

4

E-S

GS

2

-V ,

0

0 5 10 15 20 25 30 35 40

Q , TOTAL GATE CHARGE (nC)

g

Figure 14. Gate-Charge Characteristics

DS

I = -12A

D

DMP4025LK3

10,000

T = 150°C

(nA)

1,000

E

100

10

DSS

-I , LEAKA

1

0 5 10 15 20 25 30 35 40

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 13. Typical Leakage Current

vs. Drain-Source Voltage

100

R

DS(on)

Limited

10

(A)

DC

P = 10s

1

AIN

D

-I , D

0.1

T = 150°C

J(max)

T = +25°C

A

V = 10V

GS

Single Pulse

DUT on 1 * MRP Board

0.01

W

P = 1s

W

P = 100ms

W

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 15. SOA, Safe Operation Area

A

T = 125°C

A

T = 85°C

A

T = 25°C

P = 10ms

W

P = 1ms

W

P = 100µs

W

A

DMP4025LK3

Document Number:35938 Rev. 3 - 2

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March 2014

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCE INFORMATION

2X b2

E

b3

L3

D

L4

e

3X b

A

c2

A2

H

A1

L

a

E1

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMP4025LK3

Document Number:35938 Rev. 3 - 2

Y2

Y1

X1

X2

E1

Z

C

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Dim Min Max Typ

A1 0.00 0.13 0.08 A2 0.97 1.17 1.07

b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531

D1 5.21

E1 4.32

L3 0.88 1.27 1.08 L4 0.64 1.02 0.83

Dimensions Value (in mm)

Z 11.6 X1 1.5 X2 7.0 Y1 2.5 Y2 7.0

C 6.9 E1 2.3

TO252

A 2.19 2.39 2.29

b 0.64 0.88 0.783

D 6.00 6.20 6.10

e

 

E 6.45 6.70 6.58

H 9.40 10.41 9.91

L 1.40 1.78 1.59

a 0° 10°

All Dimensions in mm

DMP4025LK3

 

2.286

 



March 2014

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP4025LK3

Document Number:35938 Rev. 3 - 2

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March 2014

Diodes DMP4025LK3 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual