Diodes DMP4025LK3 User Manual

Product Summary

BV

R

DSS

-40V

25mΩ @ V

45mΩ @ VGS = -4.5V

DS(on)

max

= -10V

GS

T

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

 Motor control

ADVANCE INFORMATION

 Backlighting

 DC-DC Converters

 Printer equipment

TO252

Top View

I

max

D

= +25°C

A

(Note 6)

-8.6A

-7.0A

Top View

Pin Out

DMP4025LK3

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Fast Switching Speed

 Low Input/Output Leakage

 Lead-Free Finish; RoHS compliant (Note 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TO252 (DPAK)

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals Connections: See diagram below

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.315 grams (approximate)

Device symbol

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP4025LK3-13 P4025L 13 16 2,500

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMP4025LK3

Document Number:35938 Rev. 3 - 2

YYWW

P4025L

= Manufacturer’s Marking
P4025L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 10 = 2010)
WW = Week (01 - 53)

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Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Body diode) (Notes 7)

Pulsed Source Current (Body diode) (Notes 7)

Thermal Characteristics (@T

ADVANCE INFORMATION

Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case (Notes 6)

Thermal Resistance, Junction to Lead (Notes 8)

Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on minimum recommended FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

6. Same as note (5), except the device is surface mounted on 25mm X 25mm X 1.6mm FR4 PCB.

7. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300µs – pulse width by maximum junction temperature.

8. Thermal resistance from junction to solder-point (at the end of the drain lead).

= +25°C unless otherwise specified.)

A

Characteristic Symbol Value Units

V

DSS

V

GSS

(Notes 6)

V

= -10V

GS

V

= -10V

GS

Characteristic Symbol Value Unit

TA = +70°C (Notes 6)

(Notes 5) -6.7

(Notes 7)

= +25°C unless otherwise specified.)

A

(Notes 5)

(Notes 6) 2.78

(Notes 5)

(Notes 6) 45

ID

IDM

I

I

SM

P

R

R

R

T

J, TSTG

S

θJA

θJC

θJL

D

-40

20

-8.6

-6.9

-35

-8.6

-35

1.7

74

7.1

1.43

-55 to +150 °C

DMP4025LK3

DMP4025LK3

Document Number:35938 Rev. 3 - 2

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V

A

W

°C/W

March 2014

© Diodes Incorporated

P

P

OWER

PATIO

P

P

E

T

R

S

ENT P

OIWE

R

T

R

T T

HER

R

TANC

Thermal Characteristics

1.8

1.6

1.4

N (W)

1.2

1

DISSI

0.8

0.6

,

D

0.4

0.2

0

ADVANCE INFORMATION

0 20406080100120140160

T , AMBIENT TEMPERATURE (C)

A

Figure 1. Power Dissipation vs. Ambient Temperature

E

1

D = 0.7

D = 0.5

D = 0.3

DMP4025LK3

100

90

(W)

80

70

60

I

50

AN

40

30

AK

,

20

(PK)

10

0

0.001 0.01 0.1 1 10 100 1,0000.0001
t1, PULSE DURATION TIME (sec)

Figure 2. Single Pulse Maximum Power Dissipat ion

Single Pulse
R = 70C/W



JA

R = r * R



JA(t) (t) JA

T - T = P * R

JA JA(t)





ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)

Figure 3. Transient Ther mal Resistance

D = 0.9

R (t) = r(t) * R



JA JA

R = 70°C/W



JA

Duty Cycle, D = t1/ t2

DMP4025LK3

Document Number:35938 Rev. 3 - 2

3 of 8

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March 2014

© Diodes Incorporated