Diodes DMP4015SSSQ User Manual

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Page 1

NEW PRODUCT

Product Summary

(BR)DSS

-40V

DS(on) max

11mΩ @ V

15mΩ @ VGS = -4.5V

= -10V

TA = +25°C

-10.1A

-8.8A

Description

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

) and yet maintain superior switching

DS(on)

Applications

 DC-DC Converters  Power management functions  Analog Switch

SO-8

Top View

Internal Schematic

DMP4015SSSQ

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 100% Unclamped Inductive Switch (UIS) test in production

 Low Input Capacitance

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Available

Mechanical Data

 Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

Top View

Equivalent circuit

Ordering Information (Note 4 & 5)

Part Number Qualification Case Packaging

DMP4015SSSQ-13 Automotive SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

P4015SS

Y WW

DMP4015SSSQ

Document number: DS36682 Rev. 3 - 2

= Manufacturer’s Marking P4015SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53)

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)



)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Continuous Drain Current (Note 6) VGS = -4.5V

Continuous Drain Current (Note 7) VGS = -10V

Continuous Drain Current (Note 7) VGS = -4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%) Avalanche Current (Note 8) Avalanche Energy (Note 8)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range

Steady

State

Steady

State

Steady

State

Steady

State

= +25°C

= +70°C

= +25°C

= +70°C

= +25°C

= +70°C

= +25°C

= +70°C

V V

I I

P R R

J, TSTG

DSS

GSS

θJA

θJc

DMP4015SSSQ

-40 V

±25 V

-9.1

-7.2

-7.8

-6.2

-10.1

-8

-8.8

-7

-100 A

-22 A

242 mJ

1.45 W 88 °C/W

1.82 W 70 °C/W

7.6 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

DSS

GSS

-40

     

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage (Note 6)

GS(th

DS (ON)

|Y V

-1.5 -2 -2.5 V

 

7 11 9 15

-0.7 -1 V

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

10. Guaranteed by design. Not subject to production testing.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 8 .UIS in production with L = 1mH, T

9. Short duration pulse test used to minimize self-heating effect.

= +25°C

C C C

D(on

D(off

iss

oss

rss

  

      



4234 1036

526

7.77

47.5

14.2

13.5

13.2 10

302.7

137.9

-1 μ

100



  

      



VGS = 0V, ID = -250μA

= -40V, VGS = 0V

VGS = 25V, VDS = 0V

VDS = VGS, ID = -250μA

= -10V, ID = -9.8A

mΩ

= -4.5V, ID = -9.8A

= -20V, ID = -9.8A

VGS = 0V, IS = -1A

= -20V, VGS = 0V

Ω

nC

f = 1MHz

VDS = 0V, VGS = 0V, f = 1MHz

= -20V, VGS = -5V

= -9.8A

= -10V, VDD = -20V, RG = 6Ω,

= -1A, RL = 20Ω

DMP4015SSSQ

Document number: DS36682 Rev. 3 - 2

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N C

RAIN-SOUR

CE O

TAN

NEW PRODUCT

DMP4015SSSQ

(A)

30.0

25.0

20.0

15.0

-V =4.0V

-V =4.5V

-V =10V

-V =3.5V

10.0

-I , D

5.0

0.0 0 0.5 1 1.5 2

-V , DRAIN -SOURCE VOLTAGE(V)

Fig. 1 Typical Output Characteristics

0.02



-V =3.0V

-V =2.5V

-I , DRAIN CURRENT (A) 5

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

0.02



-V = 4.5V

T = 125CA

T = 150CA

0.015

N-RESISTANCE( )

0.01

URCE

0.005

DS(ON)

R,DRAIN-S

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.6

1.4

1.2

N-RESISTANCE( )

URCE

DS(ON)

R , DRAIN-S

ESIS

0.015

T = 85CA

0.01

T = -55CA

0.005

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT (A)

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

0.02

-V =4.5V

0.016

-I =5.0A

0.012

T = 25CA

(Normalized)

0.8

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Fig. 5 On-Resistance Variation with Temperature

0.008

(Normalized)

, D

0.004

DS(ON)

-50 -25 0 25 50 75 100 125 150



T , JUNCTION TEMPERATURE ( C)

Fig. 6 On-Resistance Variation with Temperature

V =10V

I=10A



DMP4015SSSQ

Document number: DS36682 Rev. 3 - 2

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UNC

TIO

N CAPACITAN

CHEC

RGY

NEW PRODUCT

DMP4015SSSQ

2.4

1.6

1.2

0.8

0.4

GS(TH)

-I , SOURCE CURRENT (A) 5

-V , GATE THRESHOLD VOLTAGE (V)

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

1000

f = 1MHz

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

)

ISS

E (p

100

OSS

RSS

, J

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Junction Capacitance

100

DS(ON)

Limited

-I (A) @ DC

-I (A) @P =10s

-I (A) @P =1s

-I (A) @P =100ms

-I (A) @P =10ms

0.1

-I , DRAIN CURRENT (A)

T = 150 C

J(MAX)

T= 25C



Single Pulse

0.01

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)



(

)

-I (A) @P =100µs

-I (A) @

P=10µs

Fig. 11 SOA, Safe Operation Area

DMP4015SSSQ

Document number: DS36682 Rev. 3 - 2

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V , GATE-SOURCE VOLTAGE (V)

020406080100120

Q , TOTAL GATE CHARGE (nC)

Fig. 10 Gate-Charge Characteristics

600

500

(mJ)

400

E ENE

300

200

E , AVALAN

100

0 0.2 0.4 0.6 0.8 1.0

INDUCTOR (mH)

Fig. 12 Single-Pulse Avalanche Tested

I,AVALAN

ENT (A)

February 2014

Page 5

T T

HER

TANC

NEW PRODUCT

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

D = 0.9 D = 0.7

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Sin gle Pulse

0.001

0.001 0.01 0.1 1 10 100 1000 10000

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Detail ‘A’

0.254 Gauge Plane

Seating Plane

7°~9

Detail ‘A’

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

X 0.60

Y 1.55 C1 5.4 C2 1.27

DMP4015SSSQ

R (t) = r(t) * R



JA JA

R = 75°C/W



Duty Cycle, D = t1/ t2

Dim Min Max

SO-8

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0 8



All Dimensions in mm

DMP4015SSSQ

Document number: DS36682 Rev. 3 - 2

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NEW PRODUCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMP4015SSSQ

Document number: DS36682 Rev. 3 - 2

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Diodes DMP4015SSSQ User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual