Diodes DMP4015SSS User Manual

NEW PRODUCT

Product Summary

I

V

(BR)DSS

-40V

R

DS(on) max

11mΩ @ V

15mΩ @ VGS = -4.5V

= -10V

GS

D

TA = +25°C

-10.1A

-8.8A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

 DC-DC Converters
 Power management functions
 Analog Switch

SO-8

S

S

Top View

G

Internal Schematic

DMP4015SSS

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 100% Unclamped Inductive Switch (UIS) test in production

 Low Input Capacitance

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

Top View

DS

D

D

D

G

Equivalent circuit

D

S

Ordering Information (Note 4)

Part Number Qualification Case Packaging

DMP4015SSS-13 Standard SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

8 5

P4015SS

WW

YY

1 4

Chengdu A/T Site Shanghai A/T Site

DMP4015SSS

Document number: DS35416 Rev. 8 - 2

8 5

P4015SS

1 4

YY

WW

www.diodes.com

1 of 7

= Manufacturer’s Marking
P4015SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

February 2014

© Diodes Incorporated

)



g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -10V

Continuous Drain Current (Note 6) VGS = -4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

Steady

State

Steady

State

Steady

State

Steady

State

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

V
V

I
I

E

P

R

P
R
R

T

J, TSTG

DSS

GSS

I

D

I

D

I

D

I

D

DM

AS

AS

D

θJA

D

θJA

θJc

DMP4015SSS

-40 V

±25 V

-9.1

-7.2

-7.8

-6.2

-10.1

-8

-8.8

-7

A

A

A

A

-100 A

-22 A

242 mJ

1.45 W
88 °C/W

1.82 W
70 °C/W

7.6 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

I

DSS

DSS

GSS

-40

 
 
 

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-1.5 -2 -2.5 V




|




7 11
9 15

26

-0.7 -1 V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

9. Guaranteed by design. Not subject to production testing.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .UIS in production with L = 1mH, T

8. Short duration pulse test used to minimize self-heating effect.

= +25°C

J

C
C
C

Q

Q

t

D(on

t

D(off

iss

oss

rss

R

G

Q

s

d

t

t

f















4234
1036

526

7.77

47.5

14.2

13.5

13.2
10

302.7

137.9

-1

100

















V

VGS = 0V, ID = -250μA

μA

V

= -40V, VGS = 0V

nA

DS

VGS = 25V, VDS = 0V

VDS = VGS, ID = -250μA

= -10V, ID = -9.8A

V

mΩ

S

GS

V

= -4.5V, ID = -9.8A

GS

V

= -20V, ID = -9.8A

DS

VGS = 0V, IS = -1A

= -20V, VGS = 0V

V

pF

Ω

nC

ns

DS

f = 1MHz

VDS = 0V, VGS = 0V, f = 1MHz

= -20V, VGS = -5V

V

DS

= -9.8A

I

D

= -10V, VDD = -20V, RG = 6Ω,

V

GS

I

= -1A, RL = 20Ω

D

DMP4015SSS

Document number: DS35416 Rev. 8 - 2

2 of 7

www.diodes.com

February 2014

© Diodes Incorporated

R

N C

U

R

R

N

T

O

O

O

O

R

RAIN-SOUR

CE O

N

R

TAN

C

NEW PRODUCT

DMP4015SSS

(A)

E

30.0

25.0

20.0

15.0

-V =4.0V

GS

-V =4.5V

GS

-V =10V

GS

-V =3.5V

GS

30

25

20

15

AI

10.0

D

-I , D

5.0

0.0
0 0.5 1 1.5 2

-V , DRAIN -SOURCE VOLTAGE(V)

DS

Fig. 1 Typical Output Characteristics

0.02



-V =3.0V

GS

-V =2.5V

GS

10

D

-I , DRAIN CURRENT (A)
5

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

0.02



-V = 4.5V

GS

T = 125CA

T = 150CA

0.015

N-RESISTANCE( )

0.01

URCE

0.005

DS(ON)

R,DRAIN-S

0

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.6

1.4

1.2

N-RESISTANCE( )

URCE

DS(ON)

R , DRAIN-S

E

ESIS

-

0.015

T = 85CA

0.01

T = -55CA

0.005

0

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

0.02

-V =4.5V

0.016

GS

-I =5.0A

D

0.012

T = 25CA

0.008

, D

(Normalized)

0.004

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

(Normalized)

1

0.8

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Fig. 5 On-Resistance Variation with Temperature

DMP4015SSS

Document number: DS35416 Rev. 8 - 2

3 of 7

www.diodes.com

V =10V

GS

I=10A

D



February 2014

© Diodes Incorporated