Diodes DMP4015SPSQ User Manual

NEW PRODUCT

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Product Summary

I

V

R

(BR)DSS

-40V

11mΩ @ V

15mΩ @ VGS = -4.5V

DS(on) max

= -10V

GS

D

TA = +25°C

-17.0A

-14.5A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• DC-DC Converters

• Power management functions

• Analog Switch

Top View

Bottom View

Pin1

DMP4015SPSQ

Green

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• 100% Unclamped Inductive Switch (UIS) Test In Production

• Low On-Resistance

• Fast Switching Speed

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Available

Mechanical Data

• Case: POWERDI®5060-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – 100% matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.097 grams (approximate)

S

S

S

G

Top View

Pin Configuration

D

D

D

D

G

Internal Schematic

POWERDI

D

S

®

Ordering Information (Note 4 & 5)

Part Number Compliance Case Packaging

DMP4015SPSQ-13 Automotive POWERDI®5060-8 2,500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

DMP4015SPSQ

Document number: DS36681 Rev. 2 - 2

D

D

P4015SP

YY WW

S

S

D

D

= Manufacturer’s Marking
P4015SP = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)

G

S

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www.diodes.com

December 2013

© Diodes Incorporated

)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Continuous Drain Current (Note 7) VGS = -10V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 7)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)

Thermal Characteristics (@T

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient (Note 7)

Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Steady

State

t<10s

Steady

State

t<10s

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

= +70°C

T

A

T
TA = +70°C

Steady state

T
TA = +70°C

Steady state

DMP4015SPSQ

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

I

AS

E

AS

= +25°C

A

t<10s 40.6 °C/W

= +25°C

A

t<10s 24.0 °C/W

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

-40 V

±25 V

-8.5

-6.8

-13.0

-10.5

-11.0

-8.7

-17.0

-13.5

A

A

A

A

-100 A

-3.5 A

-22 A

242 mJ

1.3

0.8

W

96.4 °C/W

2.1

1.4

W

55.0 °C/W

4.15 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-40

⎯ ⎯
⎯ ⎯
⎯ ⎯

-1 µ

±100

V

VGS = 0V, ID = -250μA

A

V

= -40V, VGS = 0V

nA

DS

VGS = ±25V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-1.5 -2 -2.5 V

⎯
⎯

|

⎯
⎯

7 11
9 15

26

⎯

-0.7 -1 V

VDS = VGS, ID = -250μA

= -10V, ID = -9.8A

V

mΩ

GS

V

= -4.5V, ID = -9.8A

GS

S

V

= -20V, ID = -9.8A

DS

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

10. Guaranteed by design. Not subject to production testing.

POWERDI is a registered trademark of Diodes Incorporated

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

8. UIS in production with L = 0.1mH, TJ = +25°C
9 .Short duration pulse test used to minimize self-heating effect.

C
C

t

t

C

R

Q
Q
Q

D(on

D(off

iss

oss

rss

t

t

G

s

d

f

DMP4015SPSQ

Document number: DS36681 Rev. 2 - 2

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526

7.77

47.5

14.2

13.5

13.2
10

302.7

137.9

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⎯

⎯
⎯
⎯
⎯
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⎯

⎯

= -20V, VGS = 0V

V

pF

nC

ns

DS

f = 1MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

= -20V, VGS = -5V

V

DS

= -9.8A

I

D

= -10V, VDD = -20V, RG = 6Ω,

V

GS

I

= -1A, RL = 20Ω

D

December 2013

© Diodes Incorporated