Diodes DMP4015SPS User Manual

NEW PRODUCT

DMP4015SPS



Green

40V P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Pin1

Features and Benefits

 100% Unclamped Inductive Switch (UIS) Test In Production
 Low On-Resistance
 Fast Switching Speed

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: POWERDI®5060-8
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – 100% matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

 Weight: 0.097 grams (approximate)

S

S

S

G

D

D

D

D

G

D

S

Top View

Pin Configuration

Internal Schematic

Product Summary

I

V

R

(BR)DSS

-40V

11mΩ @ V

15mΩ @ VGS = -4.5V

DS(on) max

= -10V

GS

D

TA = +25°C

-17.0A

-14.5A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

 DC-DC Converters
 Power management functions
 Analog Switch

Top View

Bottom View

Ordering Information (Note 4 & 5)

Part Number Compliance Case Packaging

DMP4015SPS-13 Standard POWERDI®5060-8 2,500 / Tape & Reel

DMP4015SPSQ-13 Automotive POWERDI®5060-8 2,500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

DMP4015SPS

Document number: DS35518 Rev. 9 - 2

DDD

P4015SP

YY

WW

SDSSG

www.diodes.com

1 of 6

Logo

Part no.

Xth week: 01 ~ 53
Year: “09” = 2009

Year: “13” = 2013

November 2013

© Diodes Incorporated

®

)



g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Continuous Drain Current (Note 7) VGS = -10V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 7)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient (Note 7)

Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range

Steady

State

t<10s

Steady

State

t<10s

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T
TA = +70°C

Steady state

T
TA = +70°C

Steady state

DMP4015SPS

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

I

AS

E

AS

= +25°C

A

t<10s 40.6 °C/W

= +25°C

A

t<10s 24.0 °C/W

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

-40 V

±25 V

-8.5

-6.8

-13.0

-10.5

-11.0

-8.7

-17.0

-13.5

A

A

A

A

-100 A

-3.5 A

-22 A

242 mJ

1.3

0.8

W

96.4 °C/W

2.1

1.4

W

55.0 °C/W

4.15 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-40

 
 
 

-1

100

V

VGS = 0V, ID = -250μA

µA

V

= -40V, VGS = 0V

nA

DS

VGS = 25V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-1.5 -2.0 -2.5 V




|




7 11
9 15

26



-0.7 -1.0 V

VDS = VGS, ID = -250A

= -10V, ID = -9.8A

V

mΩ

GS

V

= -4.5V, ID = -9.8A

GS

S

V

= -20V, ID = -9.8A

DS

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

10. Guaranteed by design. Not subject to production testing.

POWERDI is a registered trademark of Diodes Incorporated

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

8. UIS in production with L = 0.1mH, TJ = +25°C
9 .Short duration pulse test used to minimize self-heating effect.

t

t

C
C
C

R

Q
Q
Q

D(on

D(off

iss

oss

rss

t

t

G

s

d

f

DMP4015SPS

Document number: DS35518 Rev. 9 - 2















www.diodes.com

2 of 6

4234
1036

526

7.77

47.5

14.2

13.5

13.2

10.0

302.7

137.9















= -20V, VGS = 0V

V

pF

nC

ns

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

= -20V, VGS = -5V

V

DS

= -9.8A

I

D

= -10V, VDD = -20V, RG = 6Ω,

V

GS

I

= -1A, RL = 20Ω

D

November 2013

© Diodes Incorporated

R

C

URRENT

R,DR

OUR

ON-R

O

O

R

R

OUR

CE ON-R

TANC

NEW PRODUCT

30

-V =4.0V

25

(A)

20

15

GS

-V =4.5V

-V =10V

GS

-V =3.5V

GS

GS

30

25

20

15

DMP4015SPS

AIN

10

D

-I , D

5

0

0 0.5 1 1.5 2

-V , DRAIN -SOURCE VOLTAGE(V)

DS

Fig. 1 Typical Output Characteristics

0.02



-V =3.0V

GS

10

D

-I , DRAIN CURRENT (A)
5

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

0.02



-V = 4.5V

GS

T = 125CA

T = 150CA

0.015

ESISTANCE( )

0.01

CE

AIN-S

0.005

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.6

1.4

1.2

0.015

N-RESISTANCE( )

0.01

URCE

0.005

DS(ON)

R , DRAIN-S

0

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

0.02



E ( )

0.016

-V = 4.5V

-I = 5.0A

D

ESIS

0.012

T = 85CA

T = -55CA

GS

T = 25CA

V = 10V

(Normalized)

1

0.008

GS

I=10A

D

AIN-S

0.8

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Fig. 5 On-Resistance Variation with Temperature

POWERDI is a registered trademark of Diodes Incorporated

DMP4015SPS

Document number: DS35518 Rev. 9 - 2

3 of 6

www.diodes.com

0.004

, D

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature



November 2013

© Diodes Incorporated

C

UNC

TIO

N CAPACITAN

C

F

GE CUR

RENT

CHEC

R

R

NCH

N

RGY

NEW PRODUCT

DMP4015SPS

2.4

2

1.6

1.2

0.8

0.4

GS(TH)

30

25

20

15

10

S

-I , SOURCE CURRENT (A)
5

-V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

1000

f = 1MHz

)

C

E (p

ISS

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

10000

T =150°C

A

1000

T =125°C

A

(nA)

T =85°C

A

100

C

100

OSS

C

, J

T

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Junction Capacitance

10

8

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

RSS

10

T =25°C

A

1

DSS

-I , LEAKA

0.1

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE(V)

DS

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

600

Starting Temperature (T ) = 25°C

J

500

(mJ)

E

AS

400

E

E E

300

I

AS

AS

E, AVALA

200

100

90

80

70

60

50

40

30

20

10

I,AVALAN

AS

U

ENT (A)

0

020406080100120

Q , TOTAL GATE CHARGE (nC)

g

0

0.2 0.4 0.6 0.8 1.0

0.1 0.3 0.5 0.7 0.9
INDUCTOR (mH)

Fig. 12 Single-Pulse Avalanche Tested

Fig. 11 Gate-Charge Characteristics

POWERDI is a registered trademark of Diodes Incorporated

DMP4015SPS

Document number: DS35518 Rev. 9 - 2

4 of 6

www.diodes.com

0

November 2013

© Diodes Incorporated

T

R

T T

HER

R

TANC

DMP4015SPS

R

JA

NEW PRODUCT

1

D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

1

Fig. 13 Transient Thermal Response

D = 0.9

R (t) = r(t) *



JA

R = 97°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12

Duty Cycle, D = t /t

DUT mounted on FR-4 PCB with

minimum recommended pad layout

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

POWERDI is a registered trademark of Diodes Incorporated

DMP4015SPS

Document number: DS35518 Rev. 9 - 2

D

b (8X)

L

E2

Detail A

c

1

D3

D2

O (4X)

A1

e

O (4X)

e/2

b2 (4X)

K

b3 (4X)

M

M1

POWERDI5060-8

Dim Min Max Typ

A 0.90 1.10 1.00

A1 0.00 0.05 –

b 0.33 0.51 0.41
b2 0.200 0.350 0.273
b3 0.40 0.80 0.60

c 0.230 0.330 0.277

D 5.15 BSC
D1 4.70 5.10 4.90
D2 3.70 4.10 3.90
D3 3.90 4.30 4.10

E 6.15 BSC
E1 5.60 6.00 5.80
E2 3.28 3.68 3.48
E3 3.99 4.39 4.19

e 1.27 BSC

G 0.51 0.71 0.61

K 0.51 – –

L 0.51 0.71 0.61
L1 0.050 0.20 0.175

M 3.235 4.035 3.635

M1 1.00 1.40 1.21

Θ 10º 12º 11º
Θ1 6º 8º 7º

All Dimensions in mm

D1

E

E1

1

A

E3

Detail A

G

5 of 6

www.diodes.com

L1

November 2013

© Diodes Incorporated

NEW PRODUCT

DMP4015SPS

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

3

Y

5

Y

Y

4

7

Y

6

C

X

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

POWERDI is a registered trademark of Diodes Incorporated

DMP4015SPS

Document number: DS35518 Rev. 9 - 2

X

4

X

3

Y

2

Dimensions Value (in mm)

C 1.270

Y

1

G 0.660

G1 0.820

X 0.610

X1 4.100

X

X

2

1

X2 0.755
X3 4.420
X4 5.610

Y 1.270

Y1 0.600

G

1

Y2 1.020
Y3 0.295
Y4 1.825
Y5 3.810

Y︵4

x

G

︶

Y6 0.180
Y7 6.610

IMPORTANT NOTICE

LIFE SUPPORT

6 of 6

www.diodes.com

November 2013

© Diodes Incorporated