NEW PRODUCT
DMP4015SPS
Green
40V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Pin1
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test In Production
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI®5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – 100% matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (approximate)
S
S
S
G
D
D
D
D
G
D
S
Top View
Pin Configuration
Internal Schematic
Product Summary
I
V
R
(BR)DSS
-40V
11mΩ @ V
15mΩ @ VGS = -4.5V
DS(on) max
= -10V
GS
D
TA = +25°C
-17.0A
-14.5A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
DC-DC Converters
Power management functions
Analog Switch
Top View
Bottom View
Ordering Information (Note 4 & 5)
Part Number Compliance Case Packaging
DMP4015SPS-13 Standard POWERDI®5060-8 2,500 / Tape & Reel
DMP4015SPSQ-13 Automotive POWERDI®5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
POWERDI is a registered trademark of Diodes Incorporated
DMP4015SPS
Document number: DS35518 Rev. 9 - 2
DDD
P4015SP
YY
WW
SDSSG
www.diodes.com
1 of 6
Logo
Part no.
Xth week: 01 ~ 53
Year: “09” = 2009
Year: “13” = 2013
November 2013
© Diodes Incorporated
®
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 7) VGS = -10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 7)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady
State
t<10s
Steady
State
t<10s
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
T
TA = +70°C
Steady state
T
TA = +70°C
Steady state
DMP4015SPS
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
I
AS
E
AS
= +25°C
A
t<10s 40.6 °C/W
= +25°C
A
t<10s 24.0 °C/W
P
R
P
R
R
T
J, TSTG
θJA
θJA
θJC
D
D
-40 V
±25 V
-8.5
-6.8
-13.0
-10.5
-11.0
-8.7
-17.0
-13.5
A
A
A
A
-100 A
-3.5 A
-22 A
242 mJ
1.3
0.8
W
96.4 °C/W
2.1
1.4
W
55.0 °C/W
4.15 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-40
-1
100
V
VGS = 0V, ID = -250μA
µA
V
= -40V, VGS = 0V
nA
DS
VGS = 25V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
-1.5 -2.0 -2.5 V
|
7 11
9 15
26
-0.7 -1.0 V
VDS = VGS, ID = -250A
= -10V, ID = -9.8A
V
mΩ
GS
V
= -4.5V, ID = -9.8A
GS
S
V
= -20V, ID = -9.8A
DS
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
10. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. UIS in production with L = 0.1mH, TJ = +25°C
9 .Short duration pulse test used to minimize self-heating effect.
t
t
C
C
C
R
Q
Q
Q
D(on
D(off
iss
oss
rss
t
t
G
s
d
f
DMP4015SPS
Document number: DS35518 Rev. 9 - 2
www.diodes.com
2 of 6
4234
1036
526
7.77
47.5
14.2
13.5
13.2
10.0
302.7
137.9
= -20V, VGS = 0V
V
pF
nC
ns
DS
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
= -20V, VGS = -5V
V
DS
= -9.8A
I
D
= -10V, VDD = -20V, RG = 6Ω,
V
GS
I
= -1A, RL = 20Ω
D
November 2013
© Diodes Incorporated