Diodes DMP4015SK3Q User Manual



Product Summary

I

V

(BR)DSS

-40V

R

11mΩ @ V

15mΩ @ VGS = -4.5V

DS(on) max

= -10V

GS

D

TC = +25°C

-35A

-30A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(ON)

Applications

• DC-DC Converters

• Power management functions

• Backlighting

TO252

Top View

GS

Top View

Green

DMP4015SK3Q

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

•

100% Unclamped Inductive Switch (UIS) test in production

•

Low on-resistance

•

Fast switching speed

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Available

Mechanical Data

• Case: TO252 (DPAK)

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin Finish annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

D

D

Pin-Out

Equivalent Circuit

e3

Ordering Information

Part Number Compliance Case Packaging

DMP4015SK3Q-13 Automotive TO252 2,500/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

(Note 4 & 5)

Marking Information

P4015S

YYWW

DMP4015SK3Q

Document number: DS36665 Rev. 12- 2

www.diodes.com

1 of 7

= Manufacturer’s Marking

.

P4015S = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)

December 2013

© Diodes Incorporated

)

g

g

g

)

r

)

Maximum Ratings (@ T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Continuous Drain Current (Note 6) VGS = -10V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)

Thermal Characteristics (@ T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

Steady

State

Steady

State

t<10s

T

= +25°C

C

= +70°C

T

C

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

T
TA = +70°C

Steady state

Steady state

DMP4015SK3Q

V

DSS

V

GSS

I

D

I

D

I

D

I

DM

I

S

I

AS

E

AS

= +25°C

A

t<10s 15

P

R

R

T

J, TSTG

θJA

θJC

D

-40 V

±25 V

-35

-27

-14

-11

-22

-18

A

A

A

-100 A

-5.5 A

-57 A

162 mJ

3.5

2.2

W

36

°C/W

4.5

-55 to +150 °C

Electrical Characteristics (@ T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-40

⎯ ⎯
⎯ ⎯
⎯ ⎯

-1 µ

±100

V

VGS = 0V, ID = -250μA

A

V

= -40V, VGS = 0V

nA

DS

VGS = ±25V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS(ON)

|Y
V

fs

SD

-1.5 -2 -2.5 V

⎯
⎯

|

⎯
⎯

7 11
9 15

26

⎯

-0.7 -1 V

VDS = VGS, ID = -250μA

= -10V, ID = -9.8A

V

mΩ

GS

V

= -4.5V, ID = -9.8A

GS

S

V

= -20V, ID = -9.8A

DS

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

9. Guaranteed by design. Not subject to production testing.

7. UIS in production with L = 0.1mH, T
8 .Short duration pulse test used to minimize self-heating effect.

= +25°C.

J

C

iss

C

oss

C

rss

R

G

Q

Q

s

Q

d

t

D(on

t

⎯

t

D(off

t

⎯

f

⎯

⎯

⎯
⎯
⎯

⎯
⎯
⎯
⎯

4234
1036

526

7.77

47.5

14.2

13.5

13.2
10

302.7

137.9

⎯
⎯
⎯

⎯
⎯
⎯
⎯
⎯
⎯
⎯

⎯

= -20V, VGS = 0V

V

pF

nC

ns

DS

f = 1MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

= -20V, VGS = -5V

V

DS

= -9.8A

I

D

V

= -10V, VDD = -20V,

GS

R

= 6Ω, ID = -1A

G

DMP4015SK3Q

Document number: DS36665 Rev. 12- 2

2 of 7

www.diodes.com

December 2013

© Diodes Incorporated

R

CUR

RENT

O

O

O

O

R

R

OUR

CE ON-R

C

DMP4015SK3Q

(A)

30.0

25.0

20.0

15.0

-V = 4.0V

GS

-V = 4.5V

-V = 10VGS

GS

-V = 3.5V

GS

30

25

20

15

AIN

10.0

D

-I , D

5.0

0.0
0 0.5 1 1.5 2

-V , DRAIN -SOURCE VOLTAGE(V)

DS

Fig. 1 Typical Output Characteristics

0.02

Ω

-V = 3.0V

GS

10

D

-I , DRAIN CURRENT (A)
5

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

0.02

Ω

-V = 4.5V

GS

T = 125CA°

T = 150CA°

0.015

N-RESISTANCE( )

0.01

URCE

0.005

DS(ON)

R,DRAIN-S

0

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.6

1.4

1.2

0.015

N-RESISTANCE( )

0.01

URCE

0.005

DS(ON)

R , DRAIN-S

0

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

0.020

Ω

E ( )

-V = 4.5V

0.016

GS

-I = 5.0A

D

ESISTAN

0.012

T = 85CA°

T = 25CA°

T = -55CA°

-V = 10V

(Normalized)

1

0.008

GS

-I = 10A

D

AIN-S

0.004

0.8

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 5 On-Resistance Variation with Temperature

°

, D

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

°

DMP4015SK3Q

Document number: DS36665 Rev. 12- 2

3 of 7

www.diodes.com

December 2013

© Diodes Incorporated