Diodes DMP4015SK3 User Manual
G
D
Product Summary
I
V
(BR)DSS
-40V
R
11m @ V
15m @ VGS = -4.5V
DS(on) max
= -10V
GS
D
TC = +25°C
-35A
-30A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
DC-DC Converters
Power management functions
Backlighting
TO252
Top View
Top View
Green
DMP4015SK3
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
100% Unclamped Inductive Switch (UIS) test in production
Low on-resistance
Fast switching speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Finish annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
D
S
Pin-Out
Equivalent Circuit
e3
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMP4015SK3-13 Standard TO252 2,500/Tape & Reel
DMP4015SK3Q-13 Automotive TO252 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
P4015S
YYWW
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
www.diodes.com
Logo
Part no.
Xth week: 01 ~ 53
Year: “11” = 2011
1 of 7
.
February 2013
© Diodes Incorporated
)
g
g
g
)
r
)
Maximum Ratings (@ T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 5) VGS = -10V
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)
Thermal Characteristics (@ T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady
State
Steady
State
t<10s
= +25°C
T
C
T
= +70°C
C
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
T
TA = +70°C
Steady state
Steady state
DMP4015SK3
V
DSS
V
GSS
I
D
I
D
I
D
I
DM
I
S
I
AS
E
AS
= +25°C
A
t<10s 15
P
R
R
T
J, TSTG
θJA
θJC
D
-40 V
±25 V
-35
-27
-14
-11
-22
-18
A
A
A
-100 A
-5.5 A
-57 A
162 mJ
3.5
2.2
W
36
°C/W
4.5
-55 to +150 °C
Electrical Characteristics (@ T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-40
-1 µ
100
V
VGS = 0V, ID = -250µA
A
V
= -40V, VGS = 0V
nA
DS
VGS = 25V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS(ON)
|Y
V
fs
SD
-1.5 -2.0 -2.5 V
|
7 11
9 15
26
-0.7 -1.0 V
VDS = VGS, ID = -250µA
= -10V, ID = -9.8A
V
m
GS
VGS = -4.5V, ID = -9.8A
S
V
= -20V, ID = -9.8A
DS
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Guaranteed by design. Not subject to production testing.
6. UIS in production with L = 0.1mH, T
7 .Short duration pulse test used to minimize self-heating effect.
= +25°C.
J
C
C
C
R
Q
Q
t
D(on
t
D(off
iss
oss
rss
G
Q
s
d
t
t
f
4234
1036
526
7.77
47.5
14.2
13.5
13.2
10.0
302.7
137.9
pF
nC
ns
= -20V, VGS = 0V
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
= -20V, VGS = -5V
V
DS
I
= -9.8A
D
= -10V, VDD = -20V,
V
GS
= 6, ID = -1A
R
G
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
2 of 7
www.diodes.com
February 2013
© Diodes Incorporated
R
CUR
RENT
R,DR
OUR
ON-R
R
R
OUR
ON-R
R
R
OUR
CE ON-R
TANC
DMP4015SK3
30
25
20
15
(A)
30.0
25.0
20.0
15.0
-V = 4.0V
GS
-V = 4.5V
-V = 10VGS
GS
-V = 3.5V
GS
AIN
10.0
D
-I , D
5.0
0.0
0 0.5 1 1.5 2
-V , DRAIN -SOURCE VOLTAGE(V)
DS
Fig. 1 Typical Output Characteristics
0.02
-V = 3.0V
GS
10
D
-I , DRAIN CURRENT (A)
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
0.02
-V = 4.5V
GS
T = 125CA
T = 150CA
0.015
ESISTANCE( )
0.01
CE
AIN-S
0.005
DS(ON)
0
0 5 10 15 20 25 30
-I , DRAIN SOURCE CURRENT
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.6
1.4
1.2
0.015
ESISTANCE( )
0.01
CE
AIN-S
0.005
, D
DS(ON)
0
0 5 10 15 20 25 30
-I , DRAIN SOURCE CURRENT (A)
D
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
0.020
E ( )
-V = 4.5V
0.016
GS
-I = 5.0A
D
ESIS
0.012
T = 85CA
T = 25CA
T = -55CA
-V = 10V
(Normalized)
1
0.008
GS
-I = 10A
D
AIN-S
0.004
0.8
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 5 On-Resistance Variation with Temperat ure
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
3 of 7
www.diodes.com
, D
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 6 On-Resistance Variation with Temperat ure
February 2013
© Diodes Incorporated
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