Diodes DMP4015SK3 User Manual

G

D



Product Summary

I

V

(BR)DSS

-40V

R

11m @ V

15m @ VGS = -4.5V

DS(on) max

= -10V

GS

D

TC = +25°C

-35A

-30A

Description

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters  Power management functions  Backlighting

TO252

Top View

Green

DMP4015SK3

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 100% Unclamped Inductive Switch (UIS) test in production

 Low on-resistance

 Fast switching speed

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TO252 (DPAK)

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Matte Tin Finish annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

 Weight: 0.33 grams (approximate)

D

S

Pin-Out

Equivalent Circuit

e3

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMP4015SK3-13 Standard TO252 2,500/Tape & Reel

DMP4015SK3Q-13 Automotive TO252 2,500/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html

Marking Information

P4015S

YYWW

DMP4015SK3

Document number: DS35480 Rev. 6 - 2

www.diodes.com

Logo

Part no.

Xth week: 01 ~ 53 Year: “11” = 2011

1 of 7

.

February 2013

)



g

)

r

)

Maximum Ratings (@ T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 5) Avalanche Current (Note 6) Avalanche Energy (Note 6)

Thermal Characteristics (@ T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range

Steady

State

Steady

State

t<10s

= +25°C

T

C

T

= +70°C

C

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

T TA = +70°C

Steady state

DMP4015SK3

V

DSS

V

GSS

I

D

I

D

I

D

I

DM

I

S

I

AS

E

AS

= +25°C

A

t<10s 15

P

R

T

J, TSTG

θJA

θJC

D

-40 V

±25 V

-35

-27

-14

-11

-22

-18

A

-100 A

-5.5 A

-57 A

162 mJ

3.5

2.2

W

36

°C/W

4.5

-55 to +150 °C

Electrical Characteristics (@ T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-40

     

-1 µ

100

V

VGS = 0V, ID = -250µA

A

V

= -40V, VGS = 0V

nA

DS

VGS = 25V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

V

GS(th

R

DS(ON)

|Y V

fs

SD

-1.5 -2.0 -2.5 V

 

| 



7 11 9 15

26



-0.7 -1.0 V

VDS = VGS, ID = -250µA

= -10V, ID = -9.8A

V

m

GS

VGS = -4.5V, ID = -9.8A

S

V

= -20V, ID = -9.8A

DS

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

8. Guaranteed by design. Not subject to production testing.

6. UIS in production with L = 0.1mH, T 7 .Short duration pulse test used to minimize self-heating effect.

= +25°C.

J

C C C

R

Q

t

D(on

t

D(off

iss

oss

rss

G

Q

s

d

t

f

  

      



4234 1036

526

7.77

47.5

14.2

13.5

13.2

10.0

302.7

137.9

 

pF

    

nC    

ns



= -20V, VGS = 0V

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= -20V, VGS = -5V

V

DS

I

= -9.8A

D

= -10V, VDD = -20V,

V

GS

= 6, ID = -1A

R

G

DMP4015SK3

Document number: DS35480 Rev. 6 - 2

2 of 7

www.diodes.com

February 2013

R

CUR

RENT

R,DR

OUR

ON-R

R

OUR

ON-R

R

OUR

CE ON-R

TANC

DMP4015SK3

30

25

20

15

(A)

30.0

25.0

20.0

15.0

-V = 4.0V

GS

-V = 4.5V

-V = 10VGS

GS

-V = 3.5V

GS

AIN

10.0

D

-I , D

5.0

0.0 0 0.5 1 1.5 2

-V , DRAIN -SOURCE VOLTAGE(V)

DS

Fig. 1 Typical Output Characteristics

0.02



-V = 3.0V

GS

10

D

-I , DRAIN CURRENT (A) 5

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

0.02



-V = 4.5V

GS

T = 125CA

T = 150CA

0.015

ESISTANCE( )

0.01

CE

AIN-S

0.005

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.6

1.4

1.2

0.015

ESISTANCE( )

0.01

CE

AIN-S

0.005

, D

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

0.020



E ( )

-V = 4.5V

0.016

GS

-I = 5.0A

D

ESIS

0.012

T = 85CA

T = 25CA

T = -55CA

-V = 10V

(Normalized)

1

0.008

GS

-I = 10A

D

AIN-S

0.004

0.8

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J



Fig. 5 On-Resistance Variation with Temperat ure

DMP4015SK3

Document number: DS35480 Rev. 6 - 2

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, D

DS(ON)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperat ure



February 2013

C

UNC

TIO

N CAPACITAN

C

F

GE CUR

REN

T

P

T

RAN

N

T

P

O

R



DMP4015SK3

2.4

2

1.6

1.2

0.8

0.4

GS(TH)

30

25

20

15

10

S

-I , SOURCE CURRENT (A) 5

-V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Thr eshold Variation vs. Ambient Temperature

1000

f = 1MHz

)

C

E (p

ISS

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

10000

T =150°C

A

1000

T =125°C

A

(nA)

T =85°C

A

100

C

100

OSS

10

C

, J

T

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Junction Capacitance

10

8

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

RSS

1

DSS

-I , LEAKA

0.1

051015202530

-V , DRAIN-SOURCE VOLTAGE(V)

DS

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

100

90

(W)

80

WE

70

60

SIE

50

40

30

EAK ,

20

(pk)

T =25°C

A

Single Pulse R = 72°C/W



JA

R (t) = r(t) * R



JA JA

= P * R

T - T

JA JA

10

0

020406080100120

Q , TOTAL GATE CHARGE (nC)

g

Fig. 11 Gate-Charge Characteristics

0

0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec)

Fig. 12 Single Pulse Maximum Power Dissipation

DMP4015SK3

Document number: DS35480 Rev. 6 - 2

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February 2013

C

R

C

H

RGY

R

CUR

RENT

T

R

T T

HER

R

TANC

600

Starting Temperature (T ) = 25°C

J

500

(mJ)

E

AS

400

E ENE

300

I

200

AS

E , AVA LAN

100

0

0.2 0.4 0.6 0.8 1.0

0.1 0.3 0.5 0.7 0.9

AS

INDUCTOR (mH)

Fig. 13 Single-Pulse Avalanche Tested

1

D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.50

90

80

70

60

50

40

30

20

10

0

I,AVALAN

AS

HE

U

ENT (A)

DMP4015SK3

100

(A)

AIN

D

-I , D

0.01

D = 0.9

R

DS(on)

Limited

P = 10sWµ

10

DC

P = 10s

1

0.1

W

P = 1s

W

P = 100ms

W

P = 10ms

W

T = 150°C

J(max)

T = 25°C

A

V = -10V

GS

Single Pulse DUT on 1 * MRP Board

P = 1ms

W

P = 100µs

W

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 14 SOA, Safe Operation Area

D = 0.02

0.01

D = 0.01

ANSIEN

r(t),

D = 0.005

D = Sin gle Pu lse

R (t) = r(t) * R



JA JA

R = 72°C/W



JA

Duty Cycle, D = t1/ t2

0.001

0.001 0.01 0.1 1 10 100 1,000 10,000 t1, PULSE DURATION TIMES (sec)

Fig. 15 Transient Thermal Resistance

DMP4015SK3

Document number: DS35480 Rev. 6 - 2

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February 2013

Package Outline Dimensions

2X b2

E

b3

L3

D

H

L4

e

3X b

Suggested Pad Layout

Y2

Y1

X1

X2

E1

DMP4015SK3

Dim Min Max Typ

A

c2

A2

A1

L

a

Z

C

E1

Dimensions Value (in mm)

Z 11.6 X1 1.5 X2 7.0 Y1 2.5 Y2 7.0

C 6.9

E1 2.3

A1 0.00 0.13 0.08 A2 0.97 1.17 1.07

b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531

D1 5.21

E1 4.32

L3 0.88 1.27 1.08 L4 0.64 1.02 0.83

All Dimensions in mm

TO252

A 2.19 2.39 2.29

b 0.64 0.88 0.783

D 6.00 6.20 6.10

 

e

 

E 6.45 6.70 6.58

H 9.40 10.41 9.91 L 1.40 1.78 1.59

a 0° 10°

2.286

 



DMP4015SK3

Document number: DS35480 Rev. 6 - 2

6 of 7

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February 2013

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMP4015SK3

Document number: DS35480 Rev. 6 - 2

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Diodes DMP4015SK3 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual