Diodes DMP32D9UFZ User Manual

NEW PRODUCT

DMP32D9UFZ

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

5 @ V

-30V

6 @ VGS = -2.5V
7 @ VGS = -1.8V

10 @ VGS = -1.5V

DS(ON)

GS

max

= -4.5V

TA = +25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

• General Purpose Interfacing Switch

• Power Management Functions

• Analog Switch

NEW PRODUCT

ESD PROTECTED

Bottom View Equivalent Circuit

max

I

D

-0.2A

Features and Benefits

• Low Package Profile, 0.42mm Maximum Package height

• 0.62mm x 0.62mm Package Footprint

• Low On-Resistance

• Very low Gate Threshold Voltage, 1.0V max

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

• Case: X2-DFN0606-3

• Case Material: Molded Plastic, “Green” Molding Compound

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe

Solderable per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Package Pin Configuration

e4

Top View

Ordering Information (Note 4)

Part Number Case Packaging

DMP32D9UFZ-7B X2-DFN0606-3 10K/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMP32D9UFZ

Document number: DS36842 Rev. 2 - 2

Top View

Bar Denotes Gate

and Source Side

1 of 6

www.diodes.com

U2 = Product Type Marking Code

June 2014

© Diodes Incorporated

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Steady

State

T

A

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) Steady State

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

NEW PRODUCT

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @TC = +25°C I

Gate-Source Leakage

BV

I

GSS

DSS

DSS

-30 — — V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

V

SD

-0.4 — -1.0 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C

C

C

Q

Q

Q

t

D(on)

t

D(off)

iss

oss

rss

gd

t

t

g

gs

r

f

DMP32D9UFZ

Document number: DS36842 Rev. 2 - 2

2 of 6

www.diodes.com

V

DSS

V

GSS

= +25°C
= +70°C

Steady State

— —

— —

— —

— —

— — 7

— —

—

6 —

I

D

I

DM

P

D

R

JA

θ

T

J, TSTG

100 nA

±10 µA

5

6



10

— -0.75 -1.0 V

—

—

22.5

2.9

—

—

pF

pF

— 2.1 — pF

—

—

0.35

0.06

—

—

nC

nC

— 0.09 — nC

—

—

3.1

2.3

—

—

ns

ns

— 19.9 — ns

—

10.5

—

ns

DMP32D9UFZ

-30 V

±10 V

-200

-100

-500 mA

390 mW

322 °C/W

-55 to +150 °C

VGS = 0V, ID = -250A

VDS = -24V, VGS = 0V

VGS = ±10V, VDS = 0V

VDS = VGS, ID = -250A

V

= -4.5V, ID = -100mA

GS

V

= -2.5V, ID = -50mA

GS

V

= -1.8V, ID = -20mA

GS

= -1.5V, ID = -10mA

V

GS

V

= -1.2V, ID = -1mA

GS

VGS = 0V, IS = -10mA

VDS = -15V, VGS = 0V,
f = 1.0MHz

= -4.5V, VDS =- 15V,

V

GS

= -200mA

I

D

= -10V, VGS = -4.5V,

V

DD

= 6, ID = -200mA

R

G

mA

June 2014

© Diodes Incorporated