Diodes DMP32D9UFZ User Manual

NEW PRODUCT

DMP32D9UFZ

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

5 @ V

-30V

6 @ VGS = -2.5V
7 @ VGS = -1.8V

10 @ VGS = -1.5V

DS(ON)

GS

max

= -4.5V

TA = +25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

• General Purpose Interfacing Switch

• Power Management Functions

• Analog Switch

NEW PRODUCT

ESD PROTECTED

Bottom View Equivalent Circuit

max

I

D

-0.2A

Features and Benefits

• Low Package Profile, 0.42mm Maximum Package height

• 0.62mm x 0.62mm Package Footprint

• Low On-Resistance

• Very low Gate Threshold Voltage, 1.0V max

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

• Case: X2-DFN0606-3

• Case Material: Molded Plastic, “Green” Molding Compound

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe

Solderable per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Package Pin Configuration

e4

Top View

Ordering Information (Note 4)

Part Number Case Packaging

DMP32D9UFZ-7B X2-DFN0606-3 10K/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMP32D9UFZ

Document number: DS36842 Rev. 2 - 2

Top View

Bar Denotes Gate

and Source Side

1 of 6

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U2 = Product Type Marking Code

June 2014

© Diodes Incorporated

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Steady

State

T

A

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) Steady State

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

NEW PRODUCT

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @TC = +25°C I

Gate-Source Leakage

BV

I

GSS

DSS

DSS

-30 — — V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

V

SD

-0.4 — -1.0 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C

C

C

Q

Q

Q

t

D(on)

t

D(off)

iss

oss

rss

gd

t

t

g

gs

r

f

DMP32D9UFZ

Document number: DS36842 Rev. 2 - 2

2 of 6

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V

DSS

V

GSS

= +25°C
= +70°C

Steady State

— —

— —

— —

— —

— — 7

— —

—

6 —

I

D

I

DM

P

D

R

JA

θ

T

J, TSTG

100 nA

±10 µA

5

6



10

— -0.75 -1.0 V

—

—

22.5

2.9

—

—

pF

pF

— 2.1 — pF

—

—

0.35

0.06

—

—

nC

nC

— 0.09 — nC

—

—

3.1

2.3

—

—

ns

ns

— 19.9 — ns

—

10.5

—

ns

DMP32D9UFZ

-30 V

±10 V

-200

-100

-500 mA

390 mW

322 °C/W

-55 to +150 °C

VGS = 0V, ID = -250A

VDS = -24V, VGS = 0V

VGS = ±10V, VDS = 0V

VDS = VGS, ID = -250A

V

= -4.5V, ID = -100mA

GS

V

= -2.5V, ID = -50mA

GS

V

= -1.8V, ID = -20mA

GS

= -1.5V, ID = -10mA

V

GS

V

= -1.2V, ID = -1mA

GS

VGS = 0V, IS = -10mA

VDS = -15V, VGS = 0V,
f = 1.0MHz

= -4.5V, VDS =- 15V,

V

GS

= -200mA

I

D

= -10V, VGS = -4.5V,

V

DD

= 6, ID = -200mA

R

G

mA

June 2014

© Diodes Incorporated

R

CUR

RENT

R

CUR

R

T

R

R

OUR

ON-R

R

R

OUR

ON-R

R

RAIN

OUR

C

R

R

N-SOUR

C

O

N

R

T

N

C

NEW PRODUCT

NEW PRODUCT

DMP32D9UFZ

0.8

0.7

0.6

(A)

0.5

V= -4.5V

GS

V= -4.0V

GS

V= -3.5V

GS

V= -3.0V

V= -2.5V

GS

GS

V= -2.0V

GS

0.4

AIN

0.3

V= -1.5V

D

-I , D

0.2

V= -1.0V

0.1

0.0
012345

-V , DRAIN -SOURCE VOLTAGE (V)

DS

GS

GS

V= -1.2V

GS

Figure 1 Typical Output Characteristics

100

Ω

0.6

V = -5.0V

DS

0.5

(A)

0.4

EN

0.3

AIN

0.2

D

-I , D

0.1

0

0 0.5 1 1.5 2 2.5 3

T = 150 CA°

T = 125 CA°

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85CA°

T = 25CA°

T = -55CA°

Figure 2 Typical Transfer Characteristics

8

Ω

V = -4.5V

GS

7

ESISTANCE ( )

10

V = -1.5V

GS

V = -1.8V

GS

V = -2.5V

GS

CE

1

AIN-S

, D

DS(ON)

0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

-I , DRAIN SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.8

V = -4.5V

GS

I = -300mA

1.6

D

E

1.4

-S

1.2

, D

1

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

V = -4.5V

GS

V = -2.5V

GS

I = -100mA

D

6

ESISTANCE ( )

5

4

CE

3

AIN-S

2

, D

1

DS(ON)

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

-I , DRAIN SOURCE CURRENT (A)

D

T = 125CA°

T = 85CA°

T = 150CA°

T = 25CA°

T = -55CA°

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

6

Ω

E ( )

5

A

4

ESIS

-

E

3

2

V= -2.5V

GS

I= A

-100m

D

V=5V
I= A

-4.

GS

-300m

D

AI

1

, D

DS(on)

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)J°

Figure 5 On-Resistance Variation wi th Temperature

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6 On-Resistance Variation with Temperature

DMP32D9UFZ

Document number: DS36842 Rev. 2 - 2

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June 2014

© Diodes Incorporated

GATE THRESH

O

OLTAG

OUR

CE CUR

REN

T

GAT

OUR

C

OLTAG

R

A

S

E

HER

M

A

R

E

SIS

A

C

E

NEW PRODUCT

NEW PRODUCT

1

E (V)

0.9

0.8

-I = 1m AD

LD V

0.7

-I = 250µA

D

0.6

0.5

GS(TH)

V,

0.4

-50-25 0 25 50 75100125150
T , AMBIENT TEMPERATURE (°C)

A

Figure 7 Gate Threshold Variation vs. Ambient Temperature

100

C

iss

f = 1MHz

DMP32D9UFZ

0.8

0.7

0.6

(A)

0.5

0.4

T= 150C

°

T= 125C

SD

A

°

A

T= 85C

A

T= 25C

A

T= -55C

°

A

°

°

0.3

0.2

S

-I , S

0.1

0

0 0.3 0.6 0.9 1.2 1.5

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

10

8

E (V)

10

C

T

C , JUNCTION CAPACITANCE (pF)

C

rss

1

0 4 8 1216202428

-V , DRAIN-SOURCE VOLTAGE (V)

DS

oss

Figure 9 Typical Junction Capacitance

1

D = 0.9
D = 0.7

D = 0.5

N

D = 0.3

T

0.1

D = 0.1

L

D = 0.05

NT T

D = 0.02

I

0.01

N

D = 0.01

6

E V

V = -15V

DS

I = -200mA

D

4

E-S

2

GS

-V ,

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

Q , TOTAL GATE CHARGE (nC)

g

Figure 10 Gate-Charge Characteristics

D = 0.005

r(t), T

Single Pulse

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

R(t) = r(t) * R

θθ

JA JA

R = 325°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)

Figure 11 Transient Thermal Resistance

DMP32D9UFZ

Document number: DS36842 Rev. 2 - 2

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NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

A

D

D

e/2

3

A

D

2

1

Seating Plane

e

E

2

E

NEW PRODUCT

b︵2

x

︶

k

L︵2

L

2

x

︶

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

C

X

Y

1

X

1

X

2

DMP32D9UFZ

Document number: DS36842 Rev. 2 - 2

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Dim Min Max Typ

A 0.36 0.42 0.39

A1 0 0.05 0.02

b 0.10 0.20 0.15

D 0.57 0.67 0.62
D2 0.155 BSC
D3 0.185 BSC

E 0.57 0.67 0.62
E2 0.40 0.60 0.50

e 0.35 BSC

k 0.16 REF

L 0.09 0.21 0.15
L2 0.11 0.31 0.21

All Dimensions in mm

Dimensions

C 0.350

X 0.280
X1 0.350
X2 0.760

Y 0.200
Y1 0.600

X2-DFN0606-3

Value

(in mm)

DMP32D9UFZ

June 2014

© Diodes Incorporated

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP32D9UFZ

DMP32D9UFZ

Document number: DS36842 Rev. 2 - 2

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