Diodes DMP32D4SW User Manual

A

Product Summary

V

R

(BR)DSS

-30V

2.4 @ V
4 @ VGS = -4.5V

DS(on)

Max

= -10V

GS

@ T

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 Load Switch

 Portable Applications

 Power Management Functions

NEW PRODUCT

ADVANCE INFORMATION

ESD PROTECTED

SOT323

Top View

Max

I

D

= 25C

-250mA

-200mA

DMP32D4SW

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT323

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Weight: 0.006 grams (approximate)

Drain

D

Gate

G

Top View

S

Pin-out

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 4)

Product Marking Reel size (inches) Quantity per reel

DMP32D4SW-7 P32D 7 3,000

DMP32D4SW-13 P32D 13 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

P32D

P32D = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)

DMP32D4SW

Document number: DS35823 Rev. 3 - 2

1 of 6

www.diodes.com

March 2013

© Diodes Incorporated

)

g

g

g

g

g

)

r

)

Maximum Ratings (@T

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6)

Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

NEW PRODUCT

Operating and Storage Temperature Range

ADVANCE INFORMATION

DMP32D4SW

= +25°C, unless otherwise specified.)

A

V

DSS

V

GSS

= +25°C

T

V

= -10V

GS

= +25°C, unless otherwise specified.)

A

A

T

= +70°C

A

I

I

D

DM

Characteristic Symbol Value Units

(Note 5)
(Note 6) 432
(Note 5)
(Note 6) 290
(Note 5)

P

D

R

θJA

R

θJC

T

, T

J

STG

-30 V
±20 V

250
200

mA

-1 A

300

mW

398

°C/W

142

-55 to 150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-30 - - V

- - -1 µA

- - ±10 µA

VGS = 0V, ID = -1mA
VDS = -30V, VGS = 0V

VGS = ±16V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

-1.4 - -2.4 V

- -

|

fs

- 6 - S

- 0.8 1.2 V

2.4
4

VDS = VGS, ID = -250μA

= -10V, ID = -0.5A

V

GS

Ω

V

= -4.5V, ID = -0.3A

GS

VDS = -10V, ID = -400mA

VGS = 0V, IS = -300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C
C

t

t

C

oss

rss

R
Q

Q
Q
Q

D(on

t

D(off

t

iss

s

d

f

- 51.16 -

- 10.85 -

- 8.88 -

- 275 -

- 0.6 -

- 1.2 -

- 0.2 -

- 0.3 -

- 9.86 -

- 11.5 -

- 31.8 -

- 21.9 -

pF

V

= -15V, VGS = 0V,

pF
pF

nC

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

VGS = -4.5V
nC
nC

V

GS

= -10V
nC
ns
ns
ns

= -15V, I

V

DS

= -10V, RG = 6Ω

V

GS

D

ns

= -10V,

V

DS

= -1A

I

D

= -1A

DMP32D4SW

Document number: DS35823 Rev. 3 - 2

2 of 6

www.diodes.com

March 2013

© Diodes Incorporated