Diodes DMP32D4S User Manual

A

Product Summary

V

R

(BR)DSS

-30V

Max

DS(on)

2.4 @ V
4 @ VGS = -4.5V

= -10V

GS

@T

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(ON)

ideal for high efficiency power management applications.

Applications

 Load Switch

 Portable Applications

 Power Management Functions

ADVANCE INFORMATION

ESD PROTECTED

SOT23

Top View

Max

I

D

= +25C

-300mA

-250mA

DMP32D4S

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 ESD Protected Gate to 2kV

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Weight: 0.006 grams (approximate)

Drain

D

Gate

Gate

G

Top View

Pin-Out

S

Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMP32D4S-7 SOT23 3,000/Tape & Reel

DMP32D4S-13 SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

P32S

DMP32D4S

Document number: DS35822 Rev. 4 - 2

P32S = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)

YM

M = Month (ex: 9 = September)

1 of 6

www.diodes.com

November 2013

© Diodes Incorporated

g

g

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

= +25°C

T

Continuous Drain Current (Note 6)

V

GS

= -10V

A

T

= +70°C

A

Pulsed Drain Current (Note 6)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

(Note 5)
(Note 6) 540
(Note 5)
(Note 6) 241
(Note 6)

Operating and Storage Temperature Range

ADVANCE INFORMATION

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th)

R

DS (ON)

|Y
V

SD

|

fs

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C
C
C

R
Q

Q
Q
Q

t

D(on

t

D(off

iss

oss

rss

t

t

s

d

f

V
V

DSS

GSS

I

I

DM

D

P

D

R

JA

R

JC

T

J, TSTG

-30 V
±20 V

300
250

-1 A

370

348

91

-55 to +150 °C

-30 — — V
— —
— —

-1.4

-1.2

—
—

— —

—
—

6 — S

0.8 1.2 V

— 51.16 —
— 10.85 —
— 8.88 —
— 275 —
— 0.6 —
— 1.2 —
— 0.2 —
— 0.3 —
— 9.86 —
— 11.5 —
— 31.8 —
— 21.9 —

-1 µA

±10 µA

-2.4

-2.0

2.4
4

V



pF
pF
pF



nC
nC
nC
nC
ns
ns
ns
ns

DMP32D4S

mA

mW

°C/W

VGS = 0V, ID = -1mA
VDS = -30V, VGS = 0V
VGS = ±16V, VDS = 0V

= VGS, ID = -250A

V

DS

= -5V, ID = -1A

V

DS

= -10V, ID = -0.3A

V

GS

V

= -4.5V, ID = -0.25A

GS

VDS = -10V, ID = -400mA
VGS = 0V, IS = -300mA

= -15V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V

= -10V,

V

DS

= -1A

= -10V

V

GS

= -15V, I

V

DS

= -10V, RG = 6

V

GS

I

D

= -1A

D

DMP32D4S

Document number: DS35822 Rev. 4 - 2

2 of 6

www.diodes.com

November 2013

© Diodes Incorporated