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Product Summary
Max I
V
Max R
(BR)DSS
-30V
DS(on)
1Ω @ V
1.5Ω @ VGS = -2.5V
2Ω @ VGS = -1.8V
= -4.5V
GS
@ TA = 25°C
D
-0.76A
-0.62A
-0.54A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
• Load Switch in portable electronics
X2-DFN1006-3
Bottom View
Product Line o
Diodes Incorporated
DMP31D0UFB4
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Footprint of just 0.6mm2 – thirteen times smaller than SOT23
• 0.4mm profile – ideal for low profile applications
• Low Gate Threshold Voltage
• Fast Switching Speed
• ESD Protected Gate 2KV
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Drain
S
D
G
Top View
Internal Schematic
Gate
Gate
Protection
Diode
Equivalent Circuit
Source
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMP31D0UFB4-7B P6 7 8 10,000
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMP31D0UFB4
D
atasheet number: DS35587 Rev. 1 - 2
DMP31D0UFB4-7B
P6
Top View
Bar Denotes Gate
And Source Side
www.diodes.com
P6 = Product Type Marking Code
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January 2012
© Diodes Incorporated
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P, P
T
R
T P
O
R
θ
T
R
T T
H
R
R
T
C
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 5)
Thermal Characteristics @T
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
V
DSS
V
GSS
= 25°C (Note 5)
T
Steady
State
A
= 85°C (Note 5)
T
A
T
= 25°C (Note 4)
A
= 25°C unless otherwise specified
A
I
I
D
DM
Characteristic Symbol Value Unit
(Note 4)
(Note 5) 0.92
(Note 4)
(Note 5) 136
P
D
R
θJA
, T
T
J
STG
10
9
(W)
8
IWE
7
Single Pulse
R = 262 C/W
R = r * R
T - T = P * R
°
θ
JA
θθ
JA(t) (t) JA
JA JA(t)
6
Product Line o
Diodes Incorporated
DMP31D0UFB4
-30 V
±8 V
-0.76
-0.55
-0.54
2 A
0.46
271
-55 to +150 °C
A
W
°C/W
5
ANSIEN
4
3
EAK
2
(PK)
1
0
0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
1
D = 0.7
E
D = 0.5
AN
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
E
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
Single Pulse
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
D = 0.9
R (t) = r(t) * R
θθ
JA JA
R = 262°C/W
θ
JA
Duty Cycle, D = t1/ t2
t1, PULSE DURATION TIMES (sec)
Fig. 2 Transi ent Thermal Resis t ance
DMP31D0UFB4
D
atasheet number: DS35587 Rev. 1 - 2
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)
g
g
g
g
g
)
r
)
R
CUR
R
T
R
CUR
R
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
R
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 7. Short duration pulse test used to minimize self-heating effect.
DSS
DSS
I
GSS
GS(th
DS (ON)
|
|Y
fs
V
SD
C
iss
C
oss
C
rss
R
Q
Q
Q
s
Q
d
t
D(on
t
t
D(off
t
f
Diodes Incorporated
-30 - - V
- - -1
- - ±3
-0.5 - -1.1 V
1
- -
50 - - mS
- - -1.2 V
- 76 -
- 9 -
- 6.43 -
- 166.9 -
0.9 -
- 1.5 -
- 0.1 -
- 0.2 -
- 4.98 -
- 5.85 -
- 35.71 -
- 16.64 -
1.5
2
Product Line o
DMP31D0UFB4
VGS = 0V, ID = -250μA
μA
VDS = -30V, VGS = 0V
μA
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250μA
V
= -4.5V, ID = -400mA
GS
Ω
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
= -2.5V, ID = -200mA
V
GS
= -1.8V, ID = -100mA
V
GS
VDS = -3V, ID = -300mA
VGS = 0V, IS = -300mA
= -15V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V, VDS = -15V,ID = -1A
V
= -8V, VDS = -15V,
GS
I
= -1A
D
= -10V, RL = 10Ω
V
DD
V
= -4.5V, RG = 6Ω
GS
Typical Electrical Characteristics
1.0
V = 4.5VGS
0.8
(A)
EN
AIN
D
-I , D
0.6
0.4
V = 2.5VGS
V = 1.8VGS
V = 1.5VGS
V = 1.2VGS
0.2
0
01 2345
-V , DRAIN -SOURCE VOLTAGE (V)
DS
Fig. 3 Typical Output Character i st ics
DMP31D0UFB4
D
atasheet number: DS35587 Rev. 1 - 2
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1.0
V = -5.0V
0.8
DS
(A)
EN
0.6
0.4
AIN
D
-I , D
0.2
0
0 0.5 1.0 1.5 2.0
T = 150 C
°
A
T = 125 C
°
A
-V , GATE-SOURCE VOLTAGE (V)
GS
T = 85C
A
T = 25C
A
T = -55C
°
A
°
°
Fig. 4 Typical Transfer Characteristics
January 2012
© Diodes Incorporated
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R,DR
OUR
ON-R
R
R
OUR
CE ON-R
T
C
R
R
OUR
ON-R
R
R
OUR
C
R
RAIN-SOUR
CE O
N
R
T
N
C
GAT
T
H
RESH
O
OLT
G
Product Line o
Diodes Incorporated
1.6
Ω
1.4
1.2
ESISTANCE ( )
1.0
0.8
CE
0.6
AIN-S
0.4
Ω
E ( )
AN
ESIS
AIN-S
1.6
1.4
1.2
1.0
0.8
0.6
0.4
DMP31D0UFB4
,D
0.2
DS(ON)
0
0 0.2 0.4 0.6 0.8 1.0
-I , DRAIN SOURCE CURRENT (A)
D
Fig. 5 Typical On-Resistance vs.
Drain Curr ent and G at e Vol tage
1.6
Ω
1.4
V = -4.5V
GS
1.2
ESISTANCE( )
0.2
DS(ON)
0
02468
-V , GATE SOURCE VOLTAGE(V)
GS
Fig. 6 Typical On-Resistance vs.
Drain Curr ent and
Gate Voltage
1.7
1.5
E
1.3
1.0
CE
AIN-S
, D
0.8
0.6
0.4
T = 150C
°
A
T = 125C
°
A
T = 85C
°
A
T = 25C
°
A
T = -55C
°
A
0.2
DS(ON)
0
0 0.2 0.4 0.6 0.8 1.0
-I , DRAIN SOURCE CURRENT (A)
D
Fig. 7 Typical On-Resistance vs.
Drain Curr ent and Temperature
1.6
Ω
E ( )
1.4
A
1.2
ESIS
-
1.0
V=5V
-2.
0.8
GS
I= A
-250m
D
0.6
V = -4.5V
0.4
, D
GS
I= A
-500m
D
0.2
DS(on)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 9 On-Resistance Variation with Temperature
DMP31D0UFB4
D
atasheet number: DS35587 Rev. 1 - 2
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1.1
AIN-S
, D
0.9
DS(ON)
ON-RESISTANCE (NORMALIZED)
0.7
0.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 8 On- Resistance Variati on with Temperatur e
1.4
1.2
E(V)
A
1.0
LD V
0.8
0.6
E
0.4
0.2
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 10 Gat e Threshold Variation vs. Ambient Temperatur e
January 2012
© Diodes Incorporated
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OUR
CE CUR
RENT
C
UNC
TION CAPACITANC
F
GE CUR
REN
T
GAT
OUR
C
OLTAG
1.0
0.8
(A)
0.6
0.4
S
-I , S
0.2
0
0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 11 Diode Forward Voltage vs. Current
100,000
10,000
(nA)
1,000
T = 150°C
A
T = 125°C
A
Product Line o
Diodes Incorporated
DMP31D0UFB4
120
)
100
E (p
80
C
iss
60
40
, J
T
20
0
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTA GE (V)
DS
Fig. 12 Typical Junction Capacitance
8
E (V)
6
C
oss
C
rss
f = 1MHz
T = 85°C
100
A
10
T = 25°C
DSS
-I , LEAKA
1
0.1
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
DS
A
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
E V
4
E-S
2
GS
-V ,
0
0 0.4 0.8 1.2 1.6 2.0
Q , TOTAL GATE CHARGE (nC)
g
Fig. 14 Gate-Charge Characteristics
DMP31D0UFB4
D
atasheet number: DS35587 Rev. 1 - 2
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Package Outline Dimensions
A
A1
D
b2
E
L2
Suggested Pad Layout
X
1
G2
X
Y
Product Line o
Diodes Incorporated
DMP31D0UFB4
X2-DFN1006-3
Dim Min Max Typ
A
A1 0 0.05 0.02
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
b1
e
L1L3
C
Dimensions Value (in mm)
G1
Z
E 0.55 0.675 0.60
e
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
All Dimensions in mm
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
Y 0.4
C 0.7
0.40
⎯
⎯ ⎯
⎯ ⎯
⎯
0.35
0.40
DMP31D0UFB4
D
atasheet number: DS35587 Rev. 1 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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DMP31D0UFB4
DMP31D0UFB4
D
atasheet number: DS35587 Rev. 1 - 2
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