Diodes DMP31D0UFB4 User Manual

A

f

Product Summary

Max I

V

Max R

(BR)DSS

-30V

DS(on)

1Ω @ V

1.5Ω @ VGS = -2.5V
2Ω @ VGS = -1.8V

= -4.5V

GS

@ TA = 25°C

D

-0.76A

-0.62A

-0.54A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Load Switch in portable electronics

X2-DFN1006-3

Bottom View

Product Line o

Diodes Incorporated

DMP31D0UFB4

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Footprint of just 0.6mm2 – thirteen times smaller than SOT23

• 0.4mm profile – ideal for low profile applications

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected Gate 2KV

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drain

S

D

G

Top View

Internal Schematic

Gate

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP31D0UFB4-7B P6 7 8 10,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMP31D0UFB4

D

atasheet number: DS35587 Rev. 1 - 2

DMP31D0UFB4-7B

P6

Top View

Bar Denotes Gate

And Source Side

www.diodes.com

P6 = Product Type Marking Code

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January 2012

© Diodes Incorporated

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f

P, P

T

R

T P

O

R

θ

T

R

T T

H

R

R

T

C

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 5)

Thermal Characteristics @T

Power Dissipation

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

V

DSS

V

GSS

= 25°C (Note 5)

T

Steady

State

A

= 85°C (Note 5)

T

A

T

= 25°C (Note 4)

A

= 25°C unless otherwise specified

A

I

I

D

DM

Characteristic Symbol Value Unit

(Note 4)
(Note 5) 0.92
(Note 4)
(Note 5) 136

P

D

R

θJA

, T

T

J

STG

10

9

(W)

8

IWE

7

Single Pulse
R = 262 C/W

R = r * R
T - T = P * R

°

θ

JA

θθ

JA(t) (t) JA

JA JA(t)

6

Product Line o

Diodes Incorporated

DMP31D0UFB4

-30 V
±8 V

-0.76

-0.55

-0.54
2 A

0.46

271

-55 to +150 °C

A

W

°C/W

5

ANSIEN

4
3

EAK

2

(PK)

1
0

0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

1

D = 0.7

E

D = 0.5

AN

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

E

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 262°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)
Fig. 2 Transi ent Thermal Resis t ance

DMP31D0UFB4

D

atasheet number: DS35587 Rev. 1 - 2

2 of 7

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January 2012

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f

)

g

g

g

g

g

)

r

)

R

CUR

R

T

R

CUR

R

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

V

R

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

DSS

DSS

I

GSS

GS(th

DS (ON)

|

|Y

fs

V

SD

C

iss

C

oss

C

rss

R
Q
Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

Diodes Incorporated

-30 - - V

- - -1

- - ±3

-0.5 - -1.1 V
1

- -

50 - - mS

- - -1.2 V

- 76 -

- 9 -

- 6.43 -

- 166.9 -

0.9 -

- 1.5 -

- 0.1 -

- 0.2 -

- 4.98 -

- 5.85 -

- 35.71 -

- 16.64 -

1.5
2

Product Line o

DMP31D0UFB4

VGS = 0V, ID = -250μA

μA

VDS = -30V, VGS = 0V

μA

VGS = ±8V, VDS = 0V

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -400mA

GS

Ω

pF
pF
pF

Ω
nC
nC
nC
nC

ns

ns

ns

ns

= -2.5V, ID = -200mA

V

GS

= -1.8V, ID = -100mA

V

GS

VDS = -3V, ID = -300mA
VGS = 0V, IS = -300mA

= -15V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

VGS = -4.5V, VDS = -15V,ID = -1A
V

= -8V, VDS = -15V,

GS

I

= -1A

D

= -10V, RL = 10Ω

V

DD

V

= -4.5V, RG = 6Ω

GS

Typical Electrical Characteristics

1.0

V = 4.5VGS

0.8

(A)
EN

AIN

D

-I , D

0.6

0.4

V = 2.5VGS

V = 1.8VGS

V = 1.5VGS

V = 1.2VGS

0.2

0

01 2345

-V , DRAIN -SOURCE VOLTAGE (V)

DS

Fig. 3 Typical Output Character i st ics

DMP31D0UFB4

D

atasheet number: DS35587 Rev. 1 - 2

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1.0

V = -5.0V

0.8

DS

(A)
EN

0.6

0.4

AIN

D

-I , D

0.2

0

0 0.5 1.0 1.5 2.0

T = 150 C

°

A

T = 125 C

°

A

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85C

A

T = 25C

A

T = -55C

°

A

°

°

Fig. 4 Typical Transfer Characteristics

January 2012

© Diodes Incorporated