Diodes DMP31D0U User Manual

A

f

Product Summary

Max I

D

-0.67A

-0.54A

-0.47A

V

(BR)DSS

-30V

Max R

1Ω @ V

1.5Ω @ VGS = -2.5V
2Ω @ VGS = -1.8V

DS(on)

= -4.5V

GS

@ TA = 25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Load Switch in portable electronics

SOT23

Top View

Product Line o

Diodes Incorporated

DMP31D0U

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Gate Threshold Voltage

• Fast Switching Speed

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• ESD Protected Gate 2KV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin

• Weight: 0.08 grams (approximate)

Drain

D

Gate

G

Top View

Internal Schematic

S

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP31D0U-7 P3U 7 8 3,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

P3U

DMP31D0U

D

atasheet number: DS35754 Rev. 1 - 2

P3U = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

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February 2012

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P

P

T

RAN

N

T P

OWER

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 6)

Steady

State

= 25°C (Note 5)

T

A

T

= 85°C (Note 5)

A

= 25°C (Note 4)

T

A

V
V

DSS
GSS

I

I

DM

D

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation
Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

(Note 4)
(Note 5) 0.71 W
(Note 4)
(Note 5) 177 °C/W

P

D

R

θJA

T

, T

J

STG

100

90

(W)

80

Single Pulse
Rthja = 176C/W
Rthja(t) = Rthja*r(t)
T - T = P*Rthja (t)

JA

Product Line o

Diodes Incorporated

DMP31D0U

-30 V
±8 V

-0.67

-0.48

-0.53

2.5 A

0.45 W

275 °C/W

-55 to +150 °C

A

70
60

SIE

50
40
30

EAK

20

(pk),

10

0

0.001 0.01 0.1 1 10 100 1,000
T1, PULSE DURATION SECTION (sec)

Fig. 1 Single Maximum Power Dissipation

1

r(t) @ D=0.5

r(t) @ D=0.3

0.1

r(t) @ D=0.1

r(t) @ D=0.05

r(t) @ D=0.01

r(t) @ D=0.7

r(t) @ D=0.9

0.01

r(t) @ D=0.005

R(t), TRANSIENT THERMAL RESISITANCE

r(t) @ D=Single Pulse

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

r(t) @ D=0.01

t1, PULSE DURATION TIME (sec)

R (t) = r(t)*R

θθ

JA JA

R = 176C/W

θ

JA

Duty Cycle, D = t1/t2

Fig. 2 Transi ent Thermal Resis t ance

DMP31D0U

D

atasheet number: DS35754 Rev. 1 - 2

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)

g

g

g

g

g

)

r

)

R

C

U

R

R

T

R

CUR

RENT

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C
C
C

R
Q

Q
Q
Q

t

D(on

t

D(off

DSS

fs

SD

iss
oss
rss

t

t

f

Diodes Incorporated

-30 - - V

- - -1

- - ±3

-0.5 - -1.1 V
1

- -

50 - - mS

|

- - -1.2 V

s
d

- 76 - pF

- 9 - pF

- 6.43 - pF

- 166.9 -

0.9 - nC

- 1.5 - nC

- 0.1 - nC

- 0.2 - nC

- 4.98 - ns

- 5.85 - ns

- 35.71 - ns

- 16.64 - ns

1.5
2

Product Line o

VGS = 0V, ID = -250μA

μA

VDS = -30V, VGS = 0V

μA

VGS = ±8V, VDS = 0V

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -400mA

GS

V

Ω

Ω

= -2.5V, ID = -200mA

GS

V

= -1.8V, ID = -100mA

GS

VDS = -3V, ID = -300mA
VGS = 0V, IS = -300mA

= -15V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

VGS = -4.5V, VDS = -15V, ID = -1A
V

= -8V, VDS = -15V,

GS

I

= -1A

D

V

= -10V, RL = 10Ω

DD

V

= -4.5V, RG = 6Ω

GS

DMP31D0U

Typical Electrical Characteristics

1.0

V = 4.5VGS

0.8

(A)
EN

AIN

-I , D

0.6

0.4

D

V = 2.5VGS

V = 1.8VGS

V = 1.5VGS

V = 1.2VGS

0.2

0

01 23 45

-V , DRAIN -SOURCE VOLTAGE (V)

DS

Fig. 3 Typical Output Ch ar acterist ic s

DMP31D0U

D

atasheet number: DS35754 Rev. 1 - 2

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1.0

V = -5.0V

0.8

DS

(A)

0.6

0.4

AIN

D

-I , D

0.2

0

0 0.5 1.0 1.5 2.0

T = 150 C

°

A

T = 125 C

°

A

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85C

A

T = 25C

A

T = -55C

°

A

°

°

Fig. 4 Typical Transfer Characteristics

February 2012

© Diodes Incorporated