Diodes DMP3160L User Manual

Product Summary

I

V

R

(BR)DSS

-30V

122m @ V

190m @ VGS = -4.5V

DS(on)

GS

= -10V

D

TA = +25°C

-2.7A

-2.0A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters
 Power Management Functions

SOT23

G

Top View

DMP3160L

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Source

e3

Body
Diode

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

Drain

D

Gate

S

Top View

Equivalent Circuit

Ordering Information (Note 4 & 5)

Part Number Compliance Case Packaging

DMP3160L-7 Standard SOT23 3000/Tape & Reel

DMP3160LQ-7 Automotive SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

Marking Information

Date Code Key

Chengdu A/T Site

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Shanghai A/T Site

DMP3160L

Document number: DS31268 Rev. 8 - 2

PS3 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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October 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 6) VGS = -10V

Steady

State

T

= +25°C

A

T

= +70°C

A

Pulsed Drain Current (Note 7)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) R

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

DSS

I

 

DSS

I

GSS

-30

 

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage (Note 8)

V

GS(th)

R

DS(ON)

|Y

| 

fs

V

SD

-1.3 -1.8 -2.1 V



 

DYNAMIC CHARACTERISTICS(Note 9)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C



iss

C



oss

C

rss

R



G



Total Gate Charge(VGS = -4.5V) Qg 

Total Gate Charge(VGS = -10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 6. Device mounted on FR-4 PCB. t ≤10 sec.

7. Pulse width ≤10S, Duty Cycle ≤1%.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Q



gs

Q



gd

t

D(on)

t



r

t



D(off)

t

f

DMP3160L

Document number: DS31268 Rev. 8 - 2







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www.diodes.com

V

V

I

P

T

J, TSTG

DSS

GSS

I

D

DM

D

JA

165

5.9

384.4

59.4

52.8

17.1

4.0

8.2

0.9

1.2

4.8

7.3

22.5

13.4

 

-800 nA

80

800

97

122
190



-1.26 V

























DMP3160L

-30 V

±20 V

-2.7

-2

-8 A

1.08 W

115 °C/W

-55 to +150 °C

V

V

= 0V, ID = -250µA

GS

VDS = -30V, VGS = 0V

= 12V, VDS = 0V

V

nA

m

S

GS

= 15V, VDS = 0V

V

GS

V

= VGS, ID = -250µA

DS

= -10V, ID = -2.7A

V

GS

V

= -4.5V, ID = -2.0A

GS

VDS = -5V, ID = -2.7A

V

= 0V, IS = -2.7A

GS

pF

= -10V, VGS = 0V

V

pF

pF



DS

f = 1.0MHz

V

= 0V, V

GS

f = 1.0MHz

nC

nC

nC

= -10V/-4.5V,

V

GS

= -15V, ID = -3A

V

DS

nC

ns

ns

ns

= -15V, V

V

DS

R

= 6, ID = -1A

G

ns

A

= 0V,

DS

= -10V,

GS

October 2013

© Diodes Incorporated