Diodes DMP3130L User Manual

Product Summary

V

R

(BR)DSS

77mΩ@ V

-30V

95mΩ@ VGS = -4.5V

150mΩ@ VGS = -2.5V

DS(on) max

= -10V

GS

Description and Applications

This new generation MOSFET has been designed to minimize the
on-state resistance (R
performance, making it ideal for high efficiency power management
applications.

NEW PRODUCT

 DC-DC Converters
 Power management functions
 Analog Switch

) and yet maintain superior switching

DS(on)

SOT23

Top View

I

D

TA = 25°C

-3.5A

-3.0A

-2.4A

Gate

Features and Benefits

 Low On-Resistance:
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish – Matte Tin annealed over Copper

 Terminal Connections: See Diagram
 Weight: 0.008 grams (approximate)

Drain

Source

Equivalent Circuit

DMP3130L

P-CHANNEL ENHANCEMENT MODE MOSFET

UL Flammability Classification Rating 94V-0

leadframe. Solderable per MIL-STD-202, Method 208

D

G

Top View

S

Ordering Information (Note 4)

Part Number Case Packaging

DMP3130L-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code V W X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

DMP3130L

Document number: DS31524 Rev. 6 - 2

P5S

Shanghai A/T Site

YM

www.diodes.com

P5S = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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© Diodes Incorporated

October 2013



)

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics

Characteristic Symbol Value Units

NEW PRODUCT

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

Steady

State

t<10s

DMP3130L

V

DSS

V

GSS

T

= 25C

A

= 70C

T

A

T

= 25C

A

T

= 70C

A

= 25°C

T

A

TA = 70°C

Steady State

t<10s 115

= 25°C

T

A

TA = 70°C

Steady State

t<10s 61

I

D

I

D

I

S

I

DM

R

R

R

T

J, TSTG

P

D

JA



P

D

JA



JC

-30 V

12

-3.5

-2.6

-4.1

-3.2

-1.6 A

-20 A

0.7

0.4

184

1.3

0.8
94

25

-55 to 150 °C

V

A

A

W

°C/W

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

-30

 
 
 

-1 μA

100

V

V

= 0V, ID = -250μA

GS

V

= -30V, VGS = 0V

nA

DS

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Source-Drain Diode Forward Voltage

V

GS(th

R

DS (ON)

V

g

SD

-0.6








fs





59 77

73 95

115 150

8

0.8 -1.25 V

-1.3 V

VDS = VGS, ID = -250μA
V

mΩ

V
V



S

VDS = -5V, ID = -4A
VGS = 0V, IS = -3.0A

= -10V, ID = -4.2A

GS

= -4.5V, ID = -4A

GS

= -2.5V, ID = -3A

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G







432 864 pF

87 174 pF

62 124 pF

4.04



Ω

= -15V, VGS = 0V

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing

Q
Q

t

t

Q

d(on

d(off

GS

GD

t

t

G

f

DMP3130L

Document number: DS31524 Rev. 6 - 2

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www.diodes.com

5.9 11.8
12 24

1.0 2.0

3.1 6.2

4.6 9.2

6.5 13.0

27.8 55.6

15.0 30.0

2 of 6

nC

ns

= -15V, VGS = -4.5V, ID = -4.0A

V

DS

VDS = -15V, VGS = -10V, ID = -4.0A

= -15V, VGS = -4.5V, ID = -4.0A

V

DS

V

= -15V, VGS = -10V,

DS

I

= -1A, RG = 6.0Ω

D

October 2013

© Diodes Incorporated