Diodes DMP3105LVT User Manual

NEW PRODUCT

Product Summary

I

V

(BR)DSS

-30V

R

DS(on) max

75mΩ @ V

105mΩ @ VGS = -4.5V

= -10V

GS

D

TA = 25°C

-3.9A

-3.3A

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• DC-DC Converters

• Power management functions

• Backlighting

• Motor Control

) and yet maintain superior switching

DS(on)

Top View

Features and Benefits

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

• Weight: 0.013 grams (approximate)

DMP3105LVT

30V P-CHANNEL ENHANCEMENT MODE MOSFET

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

Ordering Information (Note 3)

Part Number Case Packaging

DMP3105LVT-7 TSOT26 3,000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016

Code X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP3105LVT

Document number: DS35504 Rev. 2 - 2

www.diodes.com

31P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

1 of 6

November 2011

© Diodes Incorporated

θ

θ

θ

)

g

g

)

r

)

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = -10V

Continuous Drain Current (Note 4) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V
Maximum Continuous Body Diode Forward Current

Pulsed Drain Current (10us pulse, duty cycle=1%)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range

Steady

State

Steady

State

Steady

State

Steady

State

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

V
V

I

R

R
R

T

J, TSTG

DSS
GSS

I

I

I

I
I

DM

P

P

DMP3105LVT

D

D

D

D

S

D
JA
D
JA

Jc

-30 V

±12 V

3.1

2.5

2.7

2.2

3.9

3.1

3.3

2.7

A

A

A

A

2.2 A
20 A

1.15 W
108 °C/W

1.75 W

72 °C/W

23.4 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-30

⎯ ⎯
⎯ ⎯
⎯ ⎯

-100

±100

V

VGS = 0V, ID = -250μA

nA

nA

= -30V, VGS = 0V

V

DS

V

= ±12V, VDS = 0V

GS

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.5 -0.9 -1.5 V

⎯
⎯

⎯

| ⎯

⎯

65 75

75 98

98 150

5

⎯

-0.7 -1.0 V

VDS = VGS, ID = -250μA

= -10V, ID = -4.2A

V

GS

mΩ

VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -3.0A

S

V

= -15V, ID = -4.0A

DS

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge (VGS = -4.5V) Qg

Total Gate Charge (V

Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

= -10.0V) Qg

GS

t

t

Q
Q

D(on

D(off

s
d

t

t

f

⎯
⎯
⎯

⎯

⎯

⎯

⎯
⎯
⎯
⎯
⎯

⎯

839

47

43

12.3

9.0

19.8

1.6

1.1

9.7

17.7
269

64

⎯
⎯

pF

⎯
⎯ Ω
⎯

⎯

⎯

nC

⎯
⎯
⎯
⎯

ns

⎯

V

= -15V, VGS = 0V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz

V

= -15V, ID = -4.0A

DS

V

= -10V, VDD = -15V, RG = 6Ω,

GS

I

= -1A

D

DMP3105LVT

Document number: DS35504 Rev. 2 - 2

2 of 6

www.diodes.com

November 2011

© Diodes Incorporated