Diodes DMP3099L User Manual

Product Summary

I

D

TA = +25°C

-3.8A

-3.0A

V

(BR)DSS

-30V

R

65m @ V

99m @ VGS = -4.5V

DS(ON)

max

= -10V

GS

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

NEW PRODUCT

SOT23

Top View

max

Equivalent Circuit

DMP3099L

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

D

G

Top View

Pin Configuration

S

e3

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMP3099L-7 Standard SOT23 3000/Tape & Reel

DMP3099L-13 Standard SOT23 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP3099L

Document number: DS36081 Rev. 3 - 2

D99

D99= Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)

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)

g

g

)

)

Maximum Ratings (@T

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 5) VGS = -10V

Pulsed Drain Current (Note 6)

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

T

Steady

State

= +25°C

A

= +70°C

T

A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

NEW PRODUCT

V
V

I

P

T

J, TSTG

DSS

GSS

I

D

DM

D

JA

DMP3099L

-30 V

±20 V

-3.8

-2.9

-11 A

1.08 W
115 °C/W

-55 to +150 °C

A

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate-Source Leakage I

-30 — — V V

DSS

— — -800 nA VDS = -30V, VGS = 0V

DSS

— — ±100 nA VGS = ±20V, VDS = 0V

GSS

= 0V, ID = -250µA

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage V

Static Drain-Source On-Resistance R

-1.0 — -2.1 V V

GS(th

— —

DS(ON)

65
99

m

= VGS, ID = -250µA

DS

= -10V, ID = -3.8A

V

GS

V

= -4.5V, ID = -3.0A

GS

Forward Transfer Admittance |Yfs| — 3.6 — S VDS = -5V, ID = -2.7A
Diode Forward Voltage (Note 6) VSD — — -1.26 V V

= 0V, IS = -2.7A

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

— 563 — pF

iss

— 48 — pF

oss

— 41 — pF

rss

VDS = -25V, VGS = 0V,
f = 1.0MHz

Gate Resistance RG —10.3 —  VGS = 0V VDS = 0V, f = 1MHz

SWITCHING CHARACTERISTICS (Note 8)

V

= -15V, VGS = -4.5V,

Total Gate Charge Qg

— 5.2 —

— 11 —
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t

— 1.7 —

s

— 1.9 —

d

— 4.8 —

d(on

Rise Time tr —5.0 —
Turn-Off Delay Time t

— 31 —

d(off

nC

ns

DS

I

= -3.8A

D

V

= -15V, VGS = -10V,

DS

I

= -3.8A

D

= -15V, VGS = -10V,

V

DS

= -1A, RG = 6.0

I

D

Fall Time tf —15 —

Notes: 5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t ≤5 sec.

6. Pulse width ≤10µS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMP3099L

Document number: DS36081 Rev. 3 - 2

2 of 6

www.diodes.com

May 2013

© Diodes Incorporated