Diodes DMP3098LSS User Manual

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Features

• Low On-Resistance

• 65mΩ @ V

• 115mΩ @ V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

= -10V

GS

GS

= -4.5V

NEW PRODUCT

DMP3098LSS

SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

• Case: SOP-8L

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.072g (approximate)

SOP-8L

TOP VIEW

S

S
S
G

Internal Schematic

D

D
D
D

TOP VIEW

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady

State
Pulsed Drain Current (Note 3)

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.

DMP3098LSS

Document number: DS31265 Rev. 4 - 2

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

= 25°C

T

A

T

= 70°C

A

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V
V

I

P

R

T

J, TSTG

DSS
GSS

I

D

DM

D
JA

θ

-30 V

±20

-5.3

-4.7

-20 A

2.5 W
50 °C/W

-55 to +150 °C

V
A

September 2008

© Diodes Incorporated

RAIN C

URREN

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

NEW PRODUCT

Gate Resistance

SWITCHING CHARACTERISTICS

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

20

16

V = -10V

GS

12

BV

I

DSS

I

GSS

V

GS(th)

R

DS (ON)

g

V

C

C

oss

C

rss

R

QG
Q

Q

GS

Q

GD

t

d(on)

t

t

d(off)

t

V = -4.5V

GS

DSS

fs
SD

iss

⎯

G

G

r

f

-30

⎯ ⎯
⎯ ⎯

-1

⎯

⎯
⎯

-0.5

⎯
⎯
⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

17.6

⎯

⎯ ⎯

±100

⎯

56
98

5.2
⎯

336

70
49

4.6

4.0

7.8

1.0

2.5

6.0

5.0

9.5

20

V = -5V

DS

16

(A)

12

V

V

-1

μA
nA

-2.1 V
65

115

⎯

mΩ

S

-1.2 V

⎯
⎯
⎯

pF
pF
pF

⎯ Ω

⎯

nC

⎯

⎯

nC

⎯

GS

V

DS

V

GS

V

DS

V

GS

V

GS

V

DS

VGS = 0V, IS = -2A

V

DS

f = 1.0MHz
V

DS

f = 1.0MHz

V

DS

I

D

V

DS

I

D

⎯

⎯

⎯

ns

V

DS

I

D

⎯

T = 150°C

A

T = 125°C

A

DMP3098LSS

= 0V, ID = -250μA
= -30V, VGS = 0V

= ±20V, VDS = 0V

= VGS, ID = -250μA
= -10V, ID = -5.3A
= -4.5V, ID = -4.2A

= -10V, ID = -5.3A

= -25V, VGS = 0V

= 0V, VGS = 0V

= -15V, VGS = -4.5V,

= -5.0A

= -15V, VGS = -10V,

= -5.0A

= -15V, VGS = -10V,

= -1A, RG = 6.0Ω

T = 25°C

A

T = -55°C

A

8

D

-I , DRAIN CURRENT (A)
4

V = -3.0V

V = -1.5V

GS

V = -2.5V

GS

GS

0

012345

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typica l Out put Chara ct er i stics

8

D

-I , D
4

0

123456

-V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

DMP3098LSS

Document number: DS31265 Rev. 4 - 2

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September 2008

© Diodes Incorporated