Diodes DMP3098L User Manual

NEW PRODUCT

Product Summary

I

V

(BR)DSS

-30V

R

70mΩ@ V

120mΩ@ VGS =-4.5V

DS(on) max

= -10V

GS

D

TA = +25°C

-3.8A

-3.0A

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

 Power management functions
 Analog Switch
 Load Switch
 Boost Switch

) and yet maintain superior switching

DS(on)

SOT-23

Top View Pin Configuration

G

DMP3098L

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Low Gate Threshold Voltage

 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram
 Weight: 0.008 grams (approximate)

Drain

D

Gate

S

Source

EQUIVALENT CIRCUIT

Ordering Information (Note 4)

Part Number Case Packaging

DMP3098L-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

DMP3098L

Document number: DS31447 Rev. 8 - 2

DMB

Shanghai A/T Site

YM

DMB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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

)

g

g

)

r

)

DMP3098L

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 5) VGS = -10V

Pulsed Drain Current (Note 6)

Steady

State

T

= +25°C

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

DM

-30 V

±20 V

-3.8

-2.9

A

-11 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

NEW PRODUCT

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range

P

R

T

J, TSTG

D

JA

1.08 W
115 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

I

DSS

DSS

GSS

-30

 
 
 

V

V

-800 nA

100

VDS = -30V, VGS = 0V

nA

VGS = 20V, VDS = 0V

= 0V, ID = -250μA

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

| 

-1.0 -1.8 -2.1 V



56

98

3.6

 

70

120



-1.26 V

V

= VGS, ID = -250μA

DS

= -10V, ID = -3.8A

V

mΩ

GS

V

= -4.5V, ID = -3.0A

GS

S

VDS = -5V, ID = -2.7A
V

= 0V, IS = -2.7A

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C



iss

C



oss

C

rss

R

G





336 1008 pF

70 210 pF

V

49 147 pF

4.6



Ω

VGS = 0V, VDS = 0V, f = 1MHz

= -25V, VGS = 0V, f = 1.0MHz

DS

SWITCHING CHARACTERISTICS (Note 8)

= -15V, VGS = -4.5V,

V

Total Gate Charge

Q

g





Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Notes: 5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t ≤5 sec.

6. Pulse width ≤10S, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q



s

Q



d

t



d(on

t



t



d(off

t



f

4.0

7.8

1.0

2.5

8.0






6.0 12.0

5.0 10.0

17.6 35.2

9.5 19.0

nC

ns

DS

I

= -3.8A

D

= -15V, VGS = -10V,

V

DS

= -3.8A

I

D

= -15V, VGS = -10V,

V

DS

I

= -1A, RG = 6.0Ω

D

DMP3098L

Document number: DS31447 Rev. 8 - 2

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October 2013

© Diodes Incorporated