Page 1
Product Summary
I
D
TA = +25°C
-3.8A
-3.2A
V
(BR)DSS
-30V
R
DS(ON) MAX
70mΩ @V
95mΩ @VGS = -4.5V
GS
= -10V
Package
SO-8
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
SO-8
Top View
DMP3085LSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
S
S
S
G
Top View
Internal Schematic
D
D
D
D
Ordering Information
Part Number Case Packaging
DMP3085LSS-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
Top View
8 5
Logo
Part no
P3085SS
YY
WW
.
Xth we ek: 01 ~ 53
Year: “12” = 2012
DMP3085LSS
Document number: DS36165 Rev. 2 - 2
1 4
1 of 6
www.diodes.com
May 2013
© Diodes Incorporated
Page 2
)
g
g
)
r
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Steady
Continuous Drain Current (Note 6) VGS = -10V
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
DMP3085LSS
V
DSS
V
GSS
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
TA = +70°C
Steady State
t<10s 48
T
= +25°C
A
TA = +70°C
Steady State
t<10s 39
I
D
I
D
I
S
I
DM
R
R
R
T
J, TSTG
P
D
θJA
P
D
θJA
θJC
-30 V
±20 V
-3.8
-3
-5.3
-4.2
-2.5 A
20 A
1.3
0.8
96
1.6
1
78
18
-55 to 150 °C
A
A
W
°C/W
W
°C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
I
DSS
DSS
GSS
-30 — — V
— — -1 µA
— — ±100 nA
VGS = 0V, ID = -250µA
VDS =-30V, VGS = 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
SD
|
fs
-1 — -3 V
— 50 70
— 75 95
— 5.8 — S
— -0.7 -1.2 V
VDS = VGS, ID = -250µA
V
= -10V, ID = -5.3A
mΩ
GS
= -4.5V, ID = -4.2A
V
GS
V
= -5V, ID = -5.3A
DS
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
G
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
AR
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Q
Q
t
D(on
t
D(off
s
d
t
t
f
DMP3085LSS
Document number: DS36165 Rev. 2 - 2
— 563 —
— 48 —
— 41 —
— 10.3 — Ω
— 5.2 —
— 11 —
— 1.7 —
— 1.9 —
— 4.8 —
— 5 —
— 31 —
— 14.6 —
2 of 6
www.diodes.com
pF V
DS = -25V, VGS = 0V, f = 1.0MHz Output Capacitance
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nS
= -15V, ID = -3.8A
V
DS
DS = -15V, VGS = -10V,
V
I
D = -1A, RG = 6.0Ω
May 2013
© Diodes Incorporated
Page 3
R
N
CUR
R
N
T
RAIN CUR
R
N
T
R
R
OUR
ON-R
R
R
OUR
ON-R
R
R
OUR
C
R
RAIN
OUR
CE O
N
R
N
C
20.0
16.0
(A)
E
12.0
V= -10V
GS
V = -4.5V
GS
V = -4.0V
GS
(A)
E
20
16
12
V = -5.0V
DS
T = 150°C
A
T = 125°C
A
DMP3085LSS
T = 85°C
A
T = 25°C
A
T = -55°C
A
AI
8.0
-I , D
D
V = -3.0V
GS
4.0
V = -2.5V
V = -2.0V
GS
0.0
012345
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
1.0
GS
8
D
-I , D
4
0
0123456
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Tr ansfer Cha r acteristics
0.4
V= -4.5V
GS
0.35
0.3
T = 150 C
ESISTANCE ( )
ESISTANCE ( )
A
0.25
T = 125 C
CE
AIN-S
, D
0.1
V = -4.5V
GS
V = -10V
0.2
CE
0.15
GS
AIN-S
0.1
, D
A
T = 85C
A
T = 25C
A
T = -55C
A
0.05
DS(ON)
0.01
-I , DRAIN SOURCE CURRENT (A)
D
Figure 3 Typical On - R es i s t ance vs.
Drain Current and Gate Volta ge
2
DS(ON)
0
048121620
-I , DRAIN SOURCE CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Curr ent and Temperature
0.16
1.8
1.6
E
1.4
1.2
1
AIN-S
, D
0.8
0.6
DS(ON)
0.4
ON-RESISTA NC E (NORMALIZED)
0.2
0
-50 -25 0 25 50
T , JUNCTION TEMPERATURE ( C)
J
Figure 5 On-Resistance Variation with Temperature
DMP3085LSS
Document number: DS36165 Rev. 2 - 2
V = -10V
GS
I = -5.3A
D
75
100 125 150
V = -4.5V
GS
I = -4.2A
D
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3 of 6
E ( )
0.14
ESISTA
-
0.12
0.1
-4.
V=5V
GS
-4.2
I= A
D
0.08
-S
0.06
V= -10V
GS
I= A
D
0.04
, D
0.02
DS(ON)
0
-50-25 0255075100125150
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
© Diodes Incorporated
-5.3
May 2013
Page 4
G
H
RESH
O
O
G
OUR
CE CUR
REN
T
C
UNC
TIO
N CAPACITAN
C
p
F
GE CUR
REN
T
G
T
OUR
C
OLT
G
2.4
E (V)
LTA
1.6
LD V
-I = 250µA
D
0.8
ATE T
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Figure 7 Gate Threshold Variation vs. A mbient Temperatur e
1000
f = 1MHz
)
E (
100
-I = 1mAD
DMP3085LSS
20
16
(A)
12
8
S
-I , S
4
0
0 0.3 0.6 0.9 1.2 1.5
-V , SOURCE-DRAIN VOLT AGE (V)
SD
Figure 8 Diode Forward Voltage vs. Cu r re nt
10000
C
iss
1000
(nA)
100
T= 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
C
rss
, J
T
10
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Ca pacitance
10
9
8
E (V)
A
E V
7
6
V = -15V
DS
I = -3.8A
D
5
4
E-S
A
3
2
GS
-V ,
1
C
oss
10
T = 25°C
A
1
DSS
-I , LEAKA
0.1
0
5
10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Drain-Source Leakage Curre nt vs. Voltage
0
024681012
Q , TOTAL GATE CHARGE (nC)
g
Figure 11 Gate-Charge Characteristics
DMP3085LSS
Document number: DS36165 Rev. 2 - 2
4 of 6
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May 2013
© Diodes Incorporated
Page 5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1
E
A1
Detail ‘A’
L
0.254
Gaug e Plane
Seating Plane
7°~9
°
Detail ‘A’
A3
h
°
45
A2
e
b
D
A
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
DMP3085LSS
Document number: DS36165 Rev. 2 - 2
X
Dimensions Value (in mm)
C1
C2
Y
5 of 6
www.diodes.com
Dim Min Max
X 0.60
Y 1.55
C1 5.4
C2 1.27
SO-8
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
0 8
All Dimensions in mm
DMP3085LSS
May 2013
© Diodes Incorporated
Page 6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
DMP3085LSS
DMP3085LSS
Document number: DS36165 Rev. 2 - 2
6 of 6
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