Diodes DMP3085LSS User Manual

Product Summary

I

D

TA = +25°C

-3.8A

-3.2A

V

(BR)DSS

-30V

R

DS(ON) MAX

70mΩ @V

95mΩ @VGS = -4.5V

GS

= -10V

Package

SO-8

Description

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

 Backlighting
 Power Management Functions
 DC-DC Converters

SO-8

Top View

DMP3085LSS

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

S

S
S
G

Top View

Internal Schematic

D

D
D
D

Ordering Information

Part Number Case Packaging

DMP3085LSS-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

Top View

8 5

Logo
Part no

P3085SS

YY

WW

.

Xth we ek: 01 ~ 53
Year: “12” = 2012

DMP3085LSS

Document number: DS36165 Rev. 2 - 2

1 4

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www.diodes.com

May 2013

© Diodes Incorporated

)

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = -10V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

DMP3085LSS

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

TA = +70°C

Steady State

t<10s 48

T

= +25°C

A

TA = +70°C

Steady State

t<10s 39

I

D

I

D

I

S

I

DM

R

R
R

T

J, TSTG

P

D

θJA

P

D

θJA

θJC

-30 V

±20 V

-3.8

-3

-5.3

-4.2

-2.5 A
20 A

1.3

0.8

96

1.6

1

78

18

-55 to 150 °C

A

A

W

°C/W

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS
DSS
GSS

-30 — — V
— — -1 µA
— — ±100 nA

VGS = 0V, ID = -250µA
VDS =-30V, VGS = 0V
VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

-1 — -3 V
— 50 70
— 75 95
— 5.8 — S
— -0.7 -1.2 V

VDS = VGS, ID = -250µA
V

= -10V, ID = -5.3A

mΩ

GS

= -4.5V, ID = -4.2A

V

GS

V

= -5V, ID = -5.3A

DS

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C

AR

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on

t

D(off

s
d

t

t

f

DMP3085LSS

Document number: DS36165 Rev. 2 - 2

— 563 —
— 48 —
— 41 —
— 10.3 — Ω
— 5.2 —
— 11 —
— 1.7 —
— 1.9 —
— 4.8 —
— 5 —
— 31 —
— 14.6 —

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pF V

DS = -25V, VGS = 0V, f = 1.0MHz Output Capacitance

VDS = 0V, VGS = 0V, f = 1.0MHz

nC

nS

= -15V, ID = -3.8A

V

DS

DS = -15V, VGS = -10V,

V
I

D = -1A, RG = 6.0Ω

May 2013

© Diodes Incorporated