Diodes DMP3085LSD User Manual

D

D

G

YYWW

Product Summary

I

D

TA = +25°C

-3.9A

-3.3A

V

(BR)DSS

-30V

R

DS(ON) MAX

70mΩ @V

95mΩ @VGS = -4.5V

GS

= -10V

Package

SO-8

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

SO-8

Top View

G1

S2

G2

Top View

Internal Schematic

DMP3085LSD

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound

 UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper lead frame

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

D1S1

1

D1

D2

1

G2

D2

S1

Equivalent Circuit

S2

2

Ordering Information (Note 4)

Part Number Case Packaging

DMP3085LSD-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

DMP3085LSD

Document number: DS36194 Rev. 1 - 0

Top View

8 5

P3085SD

1 4

1 of 6

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Logo

Part no.

Xth week: 01~53
Year: “12” = 2012

© Diodes Incorporated

May 2013

)

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = -10V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

DMP3085LSD

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

TA = +70°C

Steady State

t<10s 70

= +25°C

T

A

TA = +70°C

Steady State

t<10s 50

I

D

I

D

I

S

I

DM

R

R

R

T

J, TSTG

P

D

θJA

P

D

θJA

θJC

-30 V

±20 V

-3.9

-3.1

-4.9

-3.9

-2.5 A
20 A

1.1

0.7

107

1.7

1.1

75

14.5

-55 to +150

A

A

W

°C/W

W

°C/W

°C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-30 — — V
— — -1 µA
— — ±100 nA

VGS = 0V, ID = -250µA
VDS =-30V, VGS = 0V
VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

-1 — -3 V
— 50 70
— 75 95
— 5.8 — S
— -0.7 -1.2 V

VDS = VGS, ID = -250µA
V

= -10V, ID = -5.3A

mΩ

GS

V

= -4.5V, ID = -4.2A

GS

V

= -5V, ID = -5.3A

DS

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C.

AR

Q
Q

t

D(on

t

D(off

s

d

t

t

f

DMP3085LSD

Document number: DS36194 Rev. 1 - 0

— 563 —
— 48 —
— 41 —
— 10.3 — Ω
— 5.2 —
— 11 —
— 1.7 —
— 1.9 —
— 4.8 —
— 5 —
— 31 —
— 14.6 —

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pF V

DS = -25V, VGS = 0V, f = 1.0MHz Output Capacitance

VDS = 0V, VGS = 0V, f = 1.0MHz

nC

nS

= -15V, ID = -3.8A

V

DS

DS = -15V, VGS = -10V,

V

D = -1A, RG = 6.0Ω

I

May 2013

© Diodes Incorporated

RAIN CUR

R

N

T

R

CUR

RENT

R

R

OUR

ON-R

O

O

R

R

OUR

C

R, D

RAIN

OUR

C

O

N

R

T

N

C

(A)

E

20.0

16.0

12.0

V= -10V

GS

V = -4.5V

GS

V = -4.0V

GS

8.0

-I , D

D

V = -3.0V

GS

4.0

V = -2.5V

V = -2.0V

GS

0.0

012345

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

1.0



GS

20

16

V = -5.0V

DS

T = 150°C

A

T = 125°C

A

(A)

12

8

AIN

D

-I , D
4

0

0123456

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

0.4



V = -4.5V

GS

DMP3085LSD

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.35

0.3

ESISTANCE ( )

CE

AIN-S

, D

0.1

V = -4.5V

GS

V = -10V

0.25

N-RESISTANCE ( )

0.2

URCE

0.15

GS

0.1

T = 85CA

T = 150CA

T = 125 CA

T = 25CA

T = -55CA

0.05

DS(ON)

0.01

-I , DRAIN SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

2

DS(ON)

R , DRAIN-S

0

048121620

-I , DRAIN SOURCE CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.16



1.8

1.6

E

1.4

1.2

1

AIN-S

, D

0.8

0.6

DS(ON)

0.4

ON-RESISTANCE (NORMALIZED)

0.2

0

-50 -25 0 25 50
T , JUNCTION TEMPERATURE ( C)J

Figure 5 On-Resistance Variation with Temperature

DMP3085LSD

Document number: DS36194 Rev. 1 - 0

V = -10V

GS

I = -5.3A

D

75

100 125 150

V = -4.5V

GS

I = -4.2A

D

E ( )

A

ESIS

-

E

-S

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0.14

0.12

0.1

V=5V

GS

I= A

D

0.08

0.06

0.04

0.02

DS(ON)

0

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)J

Figure 6 On-Resistance Variation with Temperature

-4.

-4.2

V= -10V

GS

I= A

-5.3

D

May 2013

© Diodes Incorporated

G

H

RESH

O

O

G

OUR

CE CUR

R

T

C

UNC

TION CAPACITANC

p

F

GAT

OUR

C

OLTAG

2.4

E (V)

LTA

1.6

LD V

-I = 250µA

D

0.8

ATE T

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Figure 7 Gate Threshold Variation vs. Ambient Temperature

1000

f = 1MHz

)

E (

100

-I = 1mAD

DMP3085LSD

20

16

(A)

EN

12

8

S

-I , S
4

0

0 0.3 0.6 0.9 1.2 1.5

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

10

C

iss

9

8

E (V)

7

6

E V

5

T= 25°C

A

V = -15V

DS

I = -3.8A

D

4

E-S

3

2

GS

-V ,

, J

C

oss

C

rss

T

1

10

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

DMP3085LSD

Document number: DS36194 Rev. 1 - 0

4 of 6

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0

024681012

Q , TOTAL GATE CHARGE (nC)

g

Figure 10 Gate-Charge Characteristics

© Diodes Incorporated

May 2013

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

E1

E

A1

Detail ‘A’

L

0.254
Gauge Plane

Seating Plane

7°~9

°

Detail ‘A’

A3

h

°

45

A2

e

b

D

A

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMP3085LSD

Document number: DS36194 Rev. 1 - 0

X

Dimensions Value (in mm)

C1

C2

Y

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Dim Min Max

X 0.60

Y 1.55
C1 5.4
C2 1.27

SO-8

A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10
E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0 8



All Dimensions in mm

DMP3085LSD

May 2013

© Diodes Incorporated

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

DMP3085LSD

DMP3085LSD

Document number: DS36194 Rev. 1 - 0

6 of 6

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May 2013

© Diodes Incorporated