Diodes DMP3065LVT User Manual

D

DMP3065LVT

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

max

D

-4.9A

-3.7A

V

(BR)DSS

-30V

R

42m @ V

65m @ VGS = -4.5V

DS(ON)

max

= -10V

GS

TA = +25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

• Backlighting

• Power Management Functions

• DC-DC Converters

ADVANCE INFORMATION

ESD PROTECTE

TSOT26

Top View

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

1

DD

2

DD

GS

3

Top View

Internal Schematic

6

5

4

e3

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP3065LVT-7 TSOT26 3,000/Tape & Reel

DMP3065LVT-13 TSOT26 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Shanghai A/T Site

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP3065LVT

Document number: DS36697 Rev. 2 - 2

Chengdu A/T Site

65P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 6

www.diodes.com

February 2014

© Diodes Incorporated

DMP3065LVT

Maximum Ratings P-Channel (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Maximum Body Diode continuous Current

Steady

State

Steady

State

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

D

I

S

-30 V

±20 V

-4.9

-3.8

-3.7

-3.1

A

A

-2.0 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

ADVANCE INFORMATION

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

Steady state

Operating and Storage Temperature Range

P

R

P

R

T

J, TSTG

JA

JA

D

D

1.2 W

102 °C/W

1.6 W

78 °C/W

-55 to +150 °C

Electrical Characteristics P-Channel (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @TJ = +25°C I

Gate-Source Leakage

BV

DSS

I

GSS

DSS

-30 — — V

— — -1 A
— — ±10 A

VGS = 0V, ID = -250A

VDS = -24V, VGS = 0V

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

|Y

V

fs

SD

-1 -1.7 -2.1 V

— 34 42

— 52 65

— 8.5 — S

|

— -0.75 -1.2 V

VDS = VGS, ID = -250A

V

= -10V, ID = -4.9A

m

GS

V

= -4.5V, ID = -3.7A

GS

VDS = -5V, ID = -4.9A

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss

Total Gate Charge (VGS = -4.5V) Qg

Total Gate Charge (VGS = -10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q

Q

t

D(on)

t

D(off)

gs

gd

t

r

t

f

—

—

—

— 6.3 —

— 12.3 —

— 1.9 —

— 2.5 —

— 5.7 —

— 11.8 —

— 21.8 —

— 23.9 —

587

160

84

—

—

—

pF

nC

ns

V

= -15V, VGS = 0V,

DS

f = 1.0MHz

V

= -15V, ID = -4.9A

DS

= -15V, VGS = -10V,

V

DD

= -4.9A, RG = 6

I

D

DMP3065LVT

Document number: DS36697 Rev. 2 - 2

2 of 6

www.diodes.com

February 2014

© Diodes Incorporated