Diodes DMP3065LVT User Manual

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DMP3065LVT

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

max

-4.9A

-3.7A

(BR)DSS

-30V

42m @ V

65m @ VGS = -4.5V

DS(ON)

max

= -10V

TA = +25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

• Backlighting

• Power Management Functions

• DC-DC Converters

ADVANCE INFORMATION

ESD PROTECTE

TSOT26

Top View

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

Top View

Internal Schematic

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP3065LVT-7 TSOT26 3,000/Tape & Reel

DMP3065LVT-13 TSOT26 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Shanghai A/T Site

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP3065LVT

Document number: DS36697 Rev. 2 - 2

Chengdu A/T Site

65P = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

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DMP3065LVT

Maximum Ratings P-Channel (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Maximum Body Diode continuous Current

Steady

State

Steady

State

= +25°C

= +70°C

= +25°C

= +70°C

DSS

GSS

-30 V

±20 V

-4.9

-3.8

-3.7

-3.1

-2.0 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

ADVANCE INFORMATION

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

Operating and Storage Temperature Range

J, TSTG

JA

1.2 W

102 °C/W

1.6 W

78 °C/W

-55 to +150 °C

Electrical Characteristics P-Channel (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @TJ = +25°C I

Gate-Source Leakage

DSS

GSS

DSS

-30 — — V

— — -1 A — — ±10 A

VGS = 0V, ID = -250A

VDS = -24V, VGS = 0V

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

GS(th)

DS (ON)

-1 -1.7 -2.1 V

— 34 42

— 52 65

— 8.5 — S

— -0.75 -1.2 V

VDS = VGS, ID = -250A

= -10V, ID = -4.9A

m

= -4.5V, ID = -3.7A

VDS = -5V, ID = -4.9A

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

iss

oss

rss

Total Gate Charge (VGS = -4.5V) Qg

Total Gate Charge (VGS = -10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

D(on)

D(off)

—

— 6.3 —

— 12.3 —

— 1.9 —

— 2.5 —

— 5.7 —

— 11.8 —

— 21.8 —

— 23.9 —

587

160

—

= -15V, VGS = 0V,

f = 1.0MHz

= -15V, ID = -4.9A

= -15V, VGS = -10V,

= -4.9A, RG = 6

DMP3065LVT

Document number: DS36697 Rev. 2 - 2

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N C

N CUR

REN

OUR

ON-R

RAIN-SOUR

CE O

N-R

TAN

OUR

ON-R

RAIN

OUR

ADVANCE INFORMATION

20.0

V= -10V

18.0

)

16.0

V= -4.5V

V= -4.0V

(

14.0

12.0

10.0

V= -3.5V

8.0

6.0

-I , D

4.0

2.0

V= -3.0V

V= -2.5V

0.0 012345

-V , DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

0.1

0.08

ESISTANCE ( )

0.06

V = -4.5V

V = -5.0V

T (A)

-I , D

T = 150CA°

T = 125CA°

012345

-V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

0.5

0.45

E ( )

ESIS

0.4

0.35

I= -3.7A

0.3

DMP3065LVT

T = 85CA°

T = 25CA°

T = -55CA°

0.04

V = -10V

AIN-S

0.02

, D

DS(ON)

02468101214161820

-I , DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.14

0.12

0.1

ESISTANCE ( )

T = 150 CA°

T = 125 CA°

T = 85CA°

T = 25CA°

T = -55CA°

AIN-S

, D

0.08

0.06

0.04

0.02

I= -4.9A

0.25

0.2

0.15

0.1

, D

0.05

DS(ON)

0 2 4 6 8 10 12 14 16 18 20

-V , GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristic

1.8

1.6

V = -10V

I = -4.9A

1.4

-S

, D

1.2

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

V = -4.5V

I = -3.7A

DS(ON)

2 4 6 8 10 12 14 16 18 20

-I , DRAIN SOURCE CURRENT (A)

Figure 5 Typical On-Resistance vs.

0.6

-50-25 0 25 50 75100125150 T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

Drain Current and Temperature

DMP3065LVT

Document number: DS36697 Rev. 2 - 2

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OUR

CE ON-R

GATE THRESH

TAG

OUR

CE CUR

RENT

UNC

TIO

N CAPACITAN

GAT

OUR

OLT

DMP3065LVT

E ( )

ESISTAN

0.1

0.08

0.06

V=5V

-4.

I= A

-3.7

2.2

E (V)

-I = 1mAD

-I = 250µA

1.8

1.6

LD V

1.4

1.2

AIN-S

0.04

, D

DS(on)

V= -10V

I= A

-4.9

0.02

-50-25 0 25 50 75100125150 T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variat ion wi th Temperature

ADVANCE INFORMATION

0.8

GS(TH)

0.6

-50-25 0 25 50 75100125150 T , AMBIENT TEMPERATURE (°C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

10000

f = 1MHz

)

(A)

-I , S

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

E (p

1000

100

, J

iss

oss

rss

0 0.3 0.6 0.9 1.2 1.5

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

E (V)

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

V = 15V

E V

I = 4.9A

E-S

02468101214

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

DMP3065LVT

Document number: DS36697 Rev. 2 - 2

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DMP3065LVT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCE INFORMATION

4x 1

6x b

TSOT26

Dim Min Max Typ

A1 0.01 0.10 A2 0.84 0.90

D E

b 0.30 0.45 c 0.12 0.20 e

L 0.30 0.50

θ 0° 8° 4°

θ1 4° 12°

All Dimensions in mm

1.00

−

− −

−

2.90

2.80

1.60

−

0.95

1.90

0.25

−

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

C C

Dimensions Value (in mm)

C 0.950 X 0.700 Y 1.000

Y1 3.199

Y (6x)

X (6x)

DMP3065LVT

Document number: DS36697 Rev. 2 - 2

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DMP3065LVT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

ADVANCE INFORMATION

final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

IMPORTANT NOTICE

LIFE SUPPORT

DMP3065LVT

Document number: DS36697 Rev. 2 - 2

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Diodes DMP3065LVT User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual