Diodes DMP3056LSS User Manual
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Features
• Low On-Resistance
• 45mΩ @ V
• 65mΩ @ V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
= -10V
GS
= -4.5V
GS
DMP3056LSS
SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072g (approximate)
SOP-8L
TOP VIEW
S
S
S
G
TOP VIEW
Internal Schematic
D
D
D
D
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady
State
Pulsed Drain Current (Note 3)
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on 1” x 1“ 2 oz. Copper pads on 2” x 2” FR-4 PCB.
DMP3056LSS
Document number: DS31419 Rev. 6 - 2
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
= 25°C
T
A
T
= 70°C
A
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V
V
I
P
R
T
J, TSTG
DSS
GSS
I
D
DM
D
JA
θ
-30 V
±20
-7.1
-6.0
-20 A
2.5 W
50 °C/W
-55 to +150 °C
V
A
September 2008
© Diodes Incorporated
RAIN C
U
R
R
N
T
R
C
U
R
R
T
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
NEW PRODUCT
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
DMP3056LSS
Document number: DS31419 Rev. 6 - 2
12
11
10
(A)
E
D
-I , D
DMP3056LSS
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
C
iss
C
oss
C
rss
R
G
QG
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
V = -10V
GS
9
V = -4.5V
GS
8
7
6
5
4
V = -3.0V
GS
3
V = -1.5V
2
1
GS
V = -1.0V
GS
V = -2.5V
GS
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
-30
⎯ ⎯
⎯ ⎯
-1 1.7 -2.1 V
⎯
⎯
⎯
-0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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⎯ ⎯
-1
±100
±800
⎯
⎯
8
⎯
722
114
92
3.3
6.8
13.7
1.6
4.18
6.4
5.3
26.5
14.7
45
65
⎯
-1.2 V
⎯
⎯
⎯
⎯ Ω
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
9
V = 5V
DS
8
Pulsed
(A)
7
EN
6
5
AIN
4
3
D
-I , D
2
T = 85°C
1
0
1 1.5 2 2.5 3 3.5 4
-V , GATE SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
T = 125°C
A
A
V
μA
nA
mΩ
S
pF
pF
pF
nC
nC
ns
T = 150°C
A
V
= 0V, ID = -250μA
GS
V
= -30V, VGS = 0V
DS
V
= ±20V, VDS = 0V
GS
V
= ±25V, VDS = 0V
GS
V
= VGS, ID = -250μA
DS
V
= -10V, ID = -6.0A
GS
V
= -4.5V, ID = -5.0A
GS
V
= -10V, ID = -5.3A
DS
VGS = 0V, IS = -1.7A
V
= -25V, VGS = 0V
DS
f = 1.0MHz
= 0V, VGS = 0V
V
DS
f = 1.0MHz
V
= -15V, VGS = -4.5V,
DS
= -6A
I
D
= -15V, VGS = -10V,
V
DS
I
= -6A
D
V
= -15V, VGS = -10V,
DS
I
= -1A, RG = 6.0Ω
D
T = 25°C
A
T = -55°C
A
September 2008
© Diodes Incorporated
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