Diodes DMP3056LDM User Manual

Product Summary

I

V

(BR)DSS

-30V

R

45mΩ @ V

65mΩ @ VGS = -4.5V

DS(on) max

= -10V

GS

D

TA = 25°C

-4.3A

-3.3A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• General Purpose Interfacing Switch

• Power Management Functions

• Analog Switch

SOT26

Top View

DMP3056LDM

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Gate Threshold Voltage

• Low On-Resistance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT26

• Case Material – Molded Plastic, “Green” Molding Compound.

UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

D

D

Internal Schematic

D

D

Top View

S

G

Ordering Information (Note 4)

Part Number Qualification Case Packaging

DMP3056LDM-7 Commercial SOT26 3000/Tape & Reel

DMP3056LDMQ-7 Automotive SOT26 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMA

YM

DMP3056LDM

Document number: DS31449 Rev. 11 - 2

DMA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)

1 of 6

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December 2012

© Diodes Incorporated

θ

θ

θ

)

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Steady State

t < 10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

V

DSS

V

GSS

= +25°CI

T

A

= +25°CI

T

A

= +25°C PD

T

A

Steady State

T

= +25°C PD

A

Steady State

D
D

I

S

I

DM

R

R
R

T

J, TSTG

JA

JA
JC

DMP3056LDM

-30 V

±20

-4.3 A

-5.8 A

-2.3 A

-13 A

1.25 W
100 °C/W

1.5 W
86

15.6

-55 to 150 °C

V

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

STATIC PARAMETERS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance

R

Forward Transconductance
Diode Forward Voltage

BV

DSS

DSS

I

GSS

V

GS(th

DS (ON)

g

FS

V

SD

-30
⎯ ⎯

⎯ ⎯

-1.0

⎯
⎯

⎯ ⎯

⎯ ⎯

±100
±800

⎯

⎯

⎯

8

-2.1 V
45

65
⎯

-1.2 V

DYNAMIC PARAMETERS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

⎯

C

iss

⎯

C

oss

⎯

C

rss

948
105
100

⎯
⎯
⎯

SWITCHING CHARACTERISTICS (Note 8)

Q

Total Gate Charge

G

QG
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6.

Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q
Q

t

t

R

d(on

d(off

GS
GD

t

t

f

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

10.1

21.1

2.8

3.2

13.15

10.2

6.6

50.1

22.3

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

-1

V

VGS = 0V, ID = -250μA

μA

VGS = 0V, V
V

nA

mΩ

pF
pF
pF

nC

nC

ns

GS

V

GS

V

GS

V

GS

V

GS

S

V

DS

V

GS

V

GS

f = 1.0MHz

V

DS

= -6A

I

D

V

DS

I

= -6A

D

Ω

VDS = 0V, VGS = 0V, f = 1MHz

V

DS

I

= -1A, RG = 6.0Ω

D

DS

= ±20V, V
= ±25V, V

= VDS, ID = -250μA
= -10V, ID = -5A
= -4.5V, ID = -4.2A
= -10V, ID = -4.3A
= 0V, IS = -1.7A

= 0V, VDS = -25V,

= -15V, VGS = -4.5V,

= -15V, VGS = -10V,

= -15V, VGS = -10V,

= -30V

= 0V

DS

= 0V

DS

DMP3056LDM

Document number: DS31449 Rev. 11 - 2

2 of 6

www.diodes.com

December 2012

© Diodes Incorporated