Diodes DMP3050LVT User Manual

NEW PRODUCT

DMP3050LVT

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

max

D

-4.5A

-3.5A

V

(BR)DSS

-30V

R

50m @ V

90m @ VGS = -4.5V

DS(ON)

max

= -10V

GS

TA = 25°C

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

• Backlighting

• Power Management Functions

• DC-DC Converters

TSOT26

Top View

D

D

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, "Green" Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

• Weight: 0.013grams (approximate)

D

D

Device Schematic

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

Drain

S

Gate

G

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMP3050LVT-7 TSOT26 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP3050LVT

Document number: DS35763 Rev. 3 - 2

G64 = Product Type Marking Code

G64

YM = Date Code Marking

YM

Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

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September 2012

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θ

)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage (Note 5)

Steady

Continuous Drain Current (Note 6) VGS = -10V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

DMP3050LVT

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

TA = +70°C

Steady State

t<10s 51

Steady State

I

D

I

D

I

S

I

DM

R
R

T

J, TSTG

P

D

JA

θ

JC

-30 V

±25 V

-4.5

-3.5

-5.2

-4.1

-2 A

-30 A

1.8

1.1
72

24

-55 to 150 °C

A

A

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-30 - - V

- - -1 A

- - ±100 nA

VGS = 0V, ID = -250A
VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-1.0 - -2.0 V

- 38 50

- 65 90

|

- 7.2 - S

- -0.7 -1.0 V

VDS = VGS, ID = -250A

= -10V, ID = -4.5A

V

mΩ

GS

V

= -4.5V, ID = -3A

GS

VDS = -5V, ID = -5A

VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate resistance

C

C

oss

C

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. AEC-Q101 VGS maximum is ±20V

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on

t

D(off

t

t

iss

rss

s
d

f

- 620 - pF

- 83 - pF

- 62 - pF

- 10.8 -

- 5.1 - nC

- 10.5 - nC

- 1.8 - nC

- 1.9 - nC

- 6.8 - ns

- 4.9 - ns

- 28.4 - ns

- 12.4 - ns

V

= -15V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= -15V, ID = -6A

DS

V

= -15V, VGS = -10V,

DD

R

= 6, ID = -1A

G

DMP3050LVT

Document number: DS35763 Rev. 3 - 2

2 of 6

www.diodes.com

September 2012

© Diodes Incorporated