Diodes DMP3050LVT User Manual

NEW PRODUCT

DMP3050LVT

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

max

D

-4.5A

-3.5A

V

(BR)DSS

-30V

R

50m @ V

90m @ VGS = -4.5V

DS(ON)

max

= -10V

GS

TA = 25°C

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

• Backlighting

• Power Management Functions

• DC-DC Converters

TSOT26

Top View

D

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, "Green" Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

• Weight: 0.013grams (approximate)

D

Device Schematic

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

Drain

S

Gate

G

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMP3050LVT-7 TSOT26 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP3050LVT

Document number: DS35763 Rev. 3 - 2

G64 = Product Type Marking Code

G64

YM = Date Code Marking

YM

Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)

1 of 6

www.diodes.com

September 2012

θ

)

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage (Note 5)

Steady

Continuous Drain Current (Note 6) VGS = -10V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

DMP3050LVT

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

TA = +70°C

Steady State

t<10s 51

Steady State

I

D

I

D

I

S

I

DM

R R

T

J, TSTG

P

D

JA

θ

JC

-30 V

±25 V

-4.5

-3.5

-5.2

-4.1

-2 A

-30 A

1.8

1.1 72

24

-55 to 150 °C

A

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-30 - - V

- - -1 A

- - ±100 nA

VGS = 0V, ID = -250A VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

fs

SD

-1.0 - -2.0 V

- 38 50

- 65 90

|

- 7.2 - S

- -0.7 -1.0 V

VDS = VGS, ID = -250A

= -10V, ID = -4.5A

V

mΩ

GS

V

= -4.5V, ID = -3A

GS

VDS = -5V, ID = -5A

VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance

Gate resistance

C

oss

C

R Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. AEC-Q101 VGS maximum is ±20V

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q Q

t

D(on

t

D(off

t

iss

rss

s d

f

- 620 - pF

- 83 - pF

- 62 - pF

- 10.8 -

- 5.1 - nC

- 10.5 - nC

- 1.8 - nC

- 1.9 - nC

- 6.8 - ns

- 4.9 - ns

- 28.4 - ns

- 12.4 - ns

V

= -15V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= -15V, ID = -6A

DS

V

= -15V, VGS = -10V,

DD

R

= 6, ID = -1A

G

DMP3050LVT

Document number: DS35763 Rev. 3 - 2

2 of 6

www.diodes.com

September 2012

RAIN CUR

REN

T

RAIN CUR

REN

T

R,DR

OUR

ON-R

R,DR

OUR

ON-R

R

OUR

ON-R

R

OUR

C

NEW PRODUCT

DMP3050LVT

20

15

(A)

V= -10V

GS

V = -4.5V

GS

V = -5.0V

GS

V = -4.0V

10

V = -3.5V

GS

D

-I , D

5

V = -3.0V

GS

V = -2.5V

0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V , DRAIN -SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typical Output Characteristics

0.12

Ω

0.10

GS

20

V = -5.0V

DS

15

(A)

10

D

-I , D

5

T = 150C

°

A

T = 125C

°

A

0

012345

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85C

A

T = 25C

A

T = -55C

°

A

°

Fig. 2 Typical Transfer Characteristics

0.10

Ω

0.08

ESISTANCE ( )

0.08

0.06

CE

0.04

AIN-S

0.02

DS(ON)

0

04812

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance vs.

Drain Curr ent and G at e Voltage

0.10

Ω

V= -4.5V

GS

0.08

ESISTANCE( )

0.06

CE

0.04

AIN-S

0.02

, D

16

T = 150C

°

A

T = 125C

°

A

T = 85C

°

A

T = 25C

°

A

T = -55C

°

A

20

ESISTANCE ( )

0.06

CE

0.04

AIN-S

0.02

DS(ON)

0

345678910

-V , GATE SOURCE VOLTAGE (V)

GS

Fig. 4 Typical On-Resistance vs.

Drain Curr ent and G at e Voltage

1.7

1.5

E

1.3

1.1

AIN-S , D

0.9

DS(ON)

0.7

ON-RESISTA NCE (NORMA LIZED)

DS(ON)

0

0 5 10 15 20

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 5 Typical On-Resistance vs.

Drain Curr ent and Tempera tu r e

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 6 On- Resistance Variati on with Temperatur e

DMP3050LVT

Document number: DS35763 Rev. 3 - 2

3 of 6

www.diodes.com

September 2012

R

RAIN-SOUR

CE O

N-R

TAN

C

GATE T

H

RESH

O

TAG

OUR

CE CUR

REN

T

C

UNC

TION CAPACITANC

F

GAT

OUR

C

OLT

G

NEW PRODUCT

DMP3050LVT

0.10

Ω

E ( )

0.08

ESIS

V=5V

-4.

0.06

GS

I= A

-5

D

2.0

1.8

E(V)

1.6

L

1.4

1.2

LD V

1.0

0.04

V= -10V

GS

I= A

-10

D

0.02

, D

DS(on)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Fig. 7 On-Resistance Variation with Temperature

20

16

°

0.8

0.6

0.4

GS(TH)

0.2

V,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 8 Gat e Threshold V ariation vs. Ambien t Temperatur e

10,000

)

f = 1MHz

E (p

(A)

1,000

12

C

iss

8

S

-I , S 4

0

0.4 0.6 0.8 1.0 1.2 1.4

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 9 Diode Forward Voltage vs. Current

10

8

E (V)

100

, J

T

10

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Junction Capacitance

C

oss

C

rss

A

6

E V

4

E-S

2

GS

-V ,

0

024681012

Q , TOTAL GATE CHARGE (nC)

g

Fig. 11 Gate - Charge Characte r istics

DMP3050LVT

Document number: DS35763 Rev. 3 - 2

4 of 6

www.diodes.com

September 2012

θ

NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

E1

A2

A

A1

D

e1

E

c

L

4x 1

e

6x b

θ

L2

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

C C

TSOT26

Dim Min Max Typ

A

A1 0.01 0.10 A2 0.84 0.90

D E

E1

b 0.30 0.45 c 0.12 0.20 e

e1

L 0.30 0.50

L2

θ 0° 8° 4°

θ1 4° 12°

All Dimensions in mm

1.00

−

− −

−

2.90

2.80

1.60

−

0.95

1.90

0.25

−

DMP3050LVT

Dimensions Value (in mm)

Y1

C 0.950

X 0.700 Y 1.000

Y1 3.199

Y (6x)

X (6x)

DMP3050LVT

Document number: DS35763 Rev. 3 - 2

5 of 6

www.diodes.com

September 2012

NEW PRODUCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMP3050LVT

Document number: DS35763 Rev. 3 - 2

6 of 6

www.diodes.com

September 2012

Diodes DMP3050LVT User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual