Diodes DMP3050LSS User Manual

NEW PRODUCT

DMP3050LSS

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

max

D

-4.8A

-3.5A

V

(BR)DSS

-30V

R

45m @ V

80m @ VGS = -4.5V

DS(ON)

max

= -10V

GS

TA = 25°C

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

• Backlighting

• Power Management Functions

• DC-DC Converters

SO-8

S

S
S
G

Top View

Top View

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Drain

D

D
D
D

Gate

Source

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP3050LSS-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMP3050LSS

Document number: DS35647 Rev. 4 - 2

Top View

8 5

P3050LS

WW

YY

1 4

Logo
Part no.

Xth week: 01 ~ 53
Year: “11” = 2011

1 of 6

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September 2012

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)

g

g

g

)

r

)

r

r

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage (Note 4)

Steady

Continuous Drain Current (Note 5) VGS = -10V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

DMP3050LSS

V

DSS

V

GSS

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

T

= 25°C

A

TA = 70°C

Steady State

t<10s 37

I

D

I

D

I

S

I

DM

R

T

J, TSTG

P

D

JA

θ

-30 V

±25 V

-4.8

-3.8

-6.3

-4.9

-3.0 A

-30 A

1.7

1.1
73

-55 to 150 °C

A

A

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-30 - - V

- - -1 A

- - ±100 nA

VGS = 0V, ID = -250A
VDS = -30V, VGS = 0V

VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-1.0 - -2.0 V

- 36 45

- 61 80

|

- 4.8 - S

- -0.7 -1.0 V

VDS = VGS, ID = -250A

= -10V, ID = -6A

V

mΩ

GS

= -4.5V, ID = -5A

V

GS

VDS = -10V, ID = -5.3A

VGS = 0V, IS = -1.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate resistance

C

C

oss

C

rss

R
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 4. AEC-Q101 VGS maximum is ±20V

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on

t

D(off

t

t

t

r

Q

iss

s
d

f

r

- 620 - pF

- 83 - pF

- 62 - pF

- 10.8 -

- 5.1 - nC

- 10.5 - nC

- 1.8 - nC

- 1.9 - nC

- 6.8 - ns

- 4.9 - ns

- 28.4 - ns

- 12.4 - ns

- 14 - ns

- 11 - nC

V

= -15V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= -15V, ID = -6A

DS

= -15V, VGS = -10V,

V

DD

R

= 6, ID = -1A

G

I

= 12A, di/dt = 500A/s

F

DMP3050LSS

Document number: DS35647 Rev. 4 - 2

2 of 6

www.diodes.com

September 2012

© Diodes Incorporated