Diodes DMP3037LSS User Manual

Product Summary

V

R

(BR)DSS

-30V

32m @ V

50m @ VGS = -4.5V

DS(on) max

= -10V

GS

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

 DC-DC Converters
 Power management functions
 Backlighting

NEW PRODUCT

SO-8

Top View

I

D

TC = +25°C

-5.8A

-4.6A

S

S

G

DMP3037LSS

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram Below
 Weight: 0.072 grams (approximate)

DS

D

D

D

D

Top View

Pin-Out

G

Equivalent Circuit

S

Ordering Information (Note 4)

Part Number Case Packaging

DMP3037LSS-13 SO-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMP3037LSS

Document number: DS36775 Rev. 2 - 2

8 5

P3037LS

WW

YY

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

P3037LS

YY

WW

1 4

1 of 6

www.diodes.com

= Manufacturer’s Marking
P3037LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

April 2014

© Diodes Incorporated

)

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH

Avalanche Energy (Notes 7) L = 0.1mH

Thermal Characteristics

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

NEW PRODUCT

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

DMP3037LSS

Characteristic Symbol Value Unit

V

DSS

V

GSS

= +25°C

T

A

T

= +70°C

A

I

D

I

DM

I

AS

E

AS

Characteristic Symbol Value Units

= +25°C

T

A

T

= +70°C

A

Steady state

t<10s 58

= +25°C

T

A

T

= +70°C

A

Steady state

t<10s 45

P

R

P

R

R

T

J, TSTG

D

JA

D

JA

JC

-30 V

±20 V

-5.8

-4.6

A

-40 A

-17 A

15 mJ

1.2

0.8

100

1.6

1.0

W

°C/W

W

77

°C/W

10

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-30 — — V
— —
— —

-1.0 A

±100 nA

VGS = 0V, ID = -250A
VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS (ON)

V

SD

-1.0 — -2.4 V

—

— -0.75 -1.2 V

19 32
28 50

VDS = VGS, ID = -250A

= -10V, ID = -7A

V

m

GS

V

= -4.5V, ID = -5A

GS

VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

C

oss

C

rss

R
Total Gate Charge (VGS = -10V) Qg
Total Gate Charge (VGS = -4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Q
Q

t

D(on

t

D(off

t

t

iss

s

d

f

—
—
—
—
—
—
—
—
—
—
—
—

931
120
102

23

19.3

9.7

2.5

3.6

3.2

11.5

55.8

30.8

—
—
—
—
—
—
—
—
—
—
—
—

pF
pF
pF

Ω

nC

= -15V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

VDS = -15V, ID = -7A
nC
nC

= -15V, ID = -7A

V

DS

nC

ns
ns
ns

= -15V, VGS = -10V,

V

DS

= 2.15, R

R

L

ns

GEN

= 3,

Body Diode Reverse Recovery Time trr — 13.6 — nS IS = -7A, dI/dt = 100A/s
Body Diode Reverse Recovery Charge Qrr — 3.4 — nC IS = -7A, dI/dt = 100A/s

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. I

and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C

AS

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMP3037LSS

Document number: DS36775 Rev. 2 - 2

2 of 6

www.diodes.com

April 2014

© Diodes Incorporated