Diodes DMP3037LSS User Manual

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Product Summary

(BR)DSS

-30V

32m @ V

50m @ VGS = -4.5V

DS(on) max

= -10V

Description

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

) and yet maintain superior switching

DS(on)

Applications

 DC-DC Converters  Power management functions  Backlighting

NEW PRODUCT

SO-8

Top View

TC = +25°C

-5.8A

-4.6A

DMP3037LSS

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram Below  Weight: 0.072 grams (approximate)

Top View

Pin-Out

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP3037LSS-13 SO-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMP3037LSS

Document number: DS36775 Rev. 2 - 2

8 5

P3037LS

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

P3037LS

1 4

1 of 6

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= Manufacturer’s Marking P3037LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

April 2014

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)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Notes 7) L = 0.1mH

Avalanche Energy (Notes 7) L = 0.1mH

Thermal Characteristics

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

NEW PRODUCT

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range

DMP3037LSS

Characteristic Symbol Value Unit

DSS

GSS

= +25°C

= +70°C

Characteristic Symbol Value Units

= +25°C

= +70°C

Steady state

t<10s 58

= +25°C

= +70°C

Steady state

t<10s 45

J, TSTG

JA

JC

-30 V

±20 V

-5.8

-4.6

-40 A

-17 A

15 mJ

1.2

0.8

100

1.6

1.0

°C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage

DSS

GSS

DSS

-30 — — V — — — —

-1.0 A

±100 nA

VGS = 0V, ID = -250A VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

GS(th

DS (ON)

-1.0 — -2.4 V

—

— -0.75 -1.2 V

19 32 28 50

VDS = VGS, ID = -250A

= -10V, ID = -7A

m

= -4.5V, ID = -5A

VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

oss

rss

R Total Gate Charge (VGS = -10V) Qg Total Gate Charge (VGS = -4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Q Q

D(on

D(off

iss

— — — — — — — — — — — —

931 120 102

19.3

9.7

2.5

3.6

3.2

11.5

55.8

30.8

— — — — — — — — — — — —

pF pF pF

= -15V, VGS = 0V,

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

VDS = -15V, ID = -7A nC nC

= -15V, ID = -7A

ns ns ns

= -15V, VGS = -10V,

= 2.15, R

GEN

= 3,

Body Diode Reverse Recovery Time trr — 13.6 — nS IS = -7A, dI/dt = 100A/s Body Diode Reverse Recovery Charge Qrr — 3.4 — nC IS = -7A, dI/dt = 100A/s

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. I

and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMP3037LSS

Document number: DS36775 Rev. 2 - 2

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April 2014

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CUR

RENT

CUR

OUR

ON-R

OUR

CE ON-R

TANC

OUR

ON-R

OUR

NEW PRODUCT

(A)

20.0

18.0

16.0

14.0

V= -3.5V

V= -10V

V= -4.5V

V= -4.0V

V= -3.0V

12.0

10.0

8.0

AIN

V= -2.5V

6.0

-I , D

4.0

2.0

V= -2.0V

0.0 012345

-V , DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

0.04



0.035

0.03

V = -4.5V

ESISTANCE ( )

0.025

V = -5.0V

(A)

AIN

T = 150CA

T = 125CA

-I , D

1 1.5 2 2.5 3 3.5

-V , GATE-SOURCE VOLTAGE (V)

0.16



E ( )

0.14

0.12

Figure 2 Typical Transfer Characteristi cs

I = -7.0A

ESIS

0.1

DMP3037LSS

T = 85CA

T = 25CA

T = -55CA

I = -5.0A

0.02

V = -10V

0.015

AIN-S

0.01

, D

0.005

DS(ON)

0 2 4 6 8 101214161820

-I , DRAIN SOURCE CURRENT (A)

0.08

0.06

AIN-S

0.04

, D

0.02

DS(ON)

0 2 4 6 8 101214161820

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.04

V= -10V



1.6

0.035

0.03

ESISTANCE ( )

T = 150 CA

T = 125 CA

0.025

0.02

0.015

AIN-S

0.01

, D

0.005

DS(ON)

0 2 4 6 8 10 12 14 16 18 20

-I , DRAIN SOURCE CURRENT (A)

T = 85CA

T = 25CA

T = -55CA

1.4

1.2

AIN-S

, D

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

DMP3037LSS

Document number: DS36775 Rev. 2 - 2

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-V , GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristics

V = -4.5V

I = -5.0A

V = -10V

I = -12A

T , JUNCTION TEMPERATURE ( C)



Figure 6 On-Resistance Variation with Temperature

April 2014

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OUR

CE ON-R

GATE THRESH

OLTAG

OUR

CE CUR

RENT

UNC

TION CAPACITANC

GAT

OUR

TAG

RAIN CUR

REN

NEW PRODUCT

0.05



0.045

E ( )

0.04

V=5V

-4.

0.035

ESISTAN

I= A

-5

0.03

0.025

0.02

0.015

V= -10V

I= A

-7

AIN-S

0.01

, D

0.005

DS(on)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

(A)

-I , S

T = 150CA

T = 125CA

T = 85CA

T = 25CA

T = -55CA

DMP3037LSS

1.8

E (V)

1.6

LD V

1.4

I = -250µA

1.2

GS(TH)

0.8

-50-25 0 25 50 75100125150



Figure 8 Gate Threshold Variation vs. Ambient Temperature

T , JUNCTION TEMPERATURE (°C)

10000

)

E (p

1000

100

, J

I=1mA

iss

oss

rss

f = 1MHz

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forwar d Voltage vs. Current

E (V)

E V

V = -15V

I= -7A

E-S

-V ,

0 2 4 6 8 101214161820

DMP3037LSS

Document number: DS36775 Rev. 2 - 2

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

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0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

100

DS(on)

Limited

(A)

0.1

-I ,

0.01

0.1 1 10 100

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

T = 150°C

J(max)

T = 25°C

V = -8V

Single Pulse

DUT on 1 * MRP Board

-V , DRAIN-SOURCE VOLTAGE (V)

P = 100µs

Figure 12 SOA, Safe Operation Area

April 2014

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RAN

HER

TAN

DMP3037LSS

D = 0.7

D = 0.5

D = 0.3

ESIS

0.1

MAL

SIE

r(t),

0.01

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

D = 0.9

R (t) = r(t) * R



JA JA

R = 100°C/W



Duty Cycle, D = t1/ t2

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIMES (sec)

Figure 13 Transient Thermal Resistance

NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Dim Min Max

0.254 Gauge Plane

Seating Plane

A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

Detail ‘A’

7°~9

Detail ‘A’

All Dimensions in mm

SO-8

A - 1.75

b 0.3 0.5 D 4.85 4.95 E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ h - 0.35 L 0.62 0.82

0 8



Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMP3037LSS

Document number: DS36775 Rev. 2 - 2

Dimensions Value (in mm)

X 0.60

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Y 1.55 C1 5.4 C2 1.27

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP3037LSS

Document number: DS36775 Rev. 2 - 2

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April 2014

Diodes DMP3037LSS User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual