Diodes DMP3035SFG User Manual

DMP3035SFG

30V P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Product Summary

(BR)DSS

20m @ V

-30V

DS(ON)

29m @ VGS = -5V

max

= -10V

max

TA = 25°C

-9.5 A

-8.5 A

Features and Benefits

• Low R

• Small form factor thermally efficient package enables higher

density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Backlighting

ADVANCE INFORMATION

• Power Management Functions

• DC-DC Converters

Top View

Bottom View

Mechanical Data

• Case: POWERDI3333-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

Drain

Pin 1

Gate

Source

Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging

DMP3035SFG-7 POWERDI3333-8 2000/Tape & Reel

DMP3035SFG-13 POWERDI3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

DMP3035SFG

Document number: DS35440 Rev. 3 - 2

P35 = Product Type Marking Code

YYWW

P35

YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53)

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RAIN C

P, P

RAN

DMP3035SFG

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = -10V

State t<10s

Steady

Continuous Drain Current (Note 6) VGS = -5V

State t<10s

Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6)

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

DSS

GSS

-30 V

±25 V

-8.5

-6.7

-12.5

-10.0

-7.0

-5.5

-10.0

-8.0

-70 A

-3.6 A

ADVANCE INFORMATION

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

Steady state

t<10s 65 °C/W

Steady state

t<10s 26 °C/W

P R R

J, TSTG

0.95 W 135 °C/W

2.3 W 55 °C/W

6.14 °C/W

-55 to +150 °C

100

DS(on)

Limited

(A) E

-I , D

0.1

0.01

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

P = 100µs

T = 150°C

J(max)

T = 25°C

Single Pulse

0.1 1 10

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 SOA, Safe Opera t ion Area

P = 10sWµ

100

(W)

80 70

IWE

60 50

SIE

Single Pulse R = 61C/W

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

40 30

EAK

(PK)

0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

POWERDI is a registered trademark of Diodes Incorporated

DMP3035SFG

Document number: DS35440 Rev. 3 - 2

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T T

HER

TANC

)

DMP3035SFG

D = 0.7

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Puls e

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 54°C/W

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)

Fig. 3 Transient Thermal Resistance

ADVANCE INFORMATION

Electrical Characteristics T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

DSS

GSS

DSS

-30 - - V

- - -1.0 A

- - ±100 nA ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage

GS(th

DS (ON)

|Y V

-1.0 -1.7 -2.5 V

- 15 20

- 21 29

- 22 - S

- -0.74 -1.0 V DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

iss

oss

rss

R Total Gate Charge VGS = -4.5V Qg Total Gate Charge VGS = -10V Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q Q

D(on

D(off

s d

- 1633 - pF

- 459 - pF

- 214 - pF

- 6.5 13 

- 17 - nC

- 35.5 - nC

- 4.6 - nC

- 5.7 - nC

- 8.5 - ns

- 14 - ns

- 50 - ns

- 25.8 - ns

VGS = 0V, ID = -250A VDS = -30V, VGS = 0V VGS = ±25V, VDS = 0V

VDS = VGS, ID = -250A V

= -10V, ID = -8A

m

= -5V, ID = -5A

VDS = -5V, ID = -10.0A VGS = 0V, IS = -1A

= -15V, VGS = 0V,

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz

= -15V, VGS = -10V, ID = 8A

= -10V, VDD = -15V,

GEN

= 3, ID = -15A

GEN

POWERDI is a registered trademark of Diodes Incorporated

DMP3035SFG

Document number: DS35440 Rev. 3 - 2

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