Diodes DMP3035LSS User Manual

θ

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Features

• Low On-Resistance

• 14mΩ @ V

• 18mΩ @ V

• 36mΩ @ V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

= -20V

GS

= -10V

GS

= -4.5V

GS

TOP VIEW

DMP3035LSS

SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.072 grams (approximate)

SO-8

S

S
S
G

TOP VIEW

Internal Schematic

D

D
D
D

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady

State
Pulsed Drain Current (Note 3)

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Notes: 1. Device mounted on 1 in.2 FR-4 board with 2 oz. Copper, in a still-air environment with TA = 25°C.

DMP3035LSS

Document number: DS31443 Rev. 6 - 2

2. No purposefully added lead.

3. Repetitive rating, pulse width limited by junction temperature.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

= 25°C

T

A

= 70°C

T

A

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V
V

I

P

R

T

J, TSTG

DSS
GSS

I

D

DM

D
JA

-30 V

±25

-11

-8

V
A

-80 A

2.0 W
60 °C/W

-55 to +150 °C

August 2009

© Diodes Incorporated

)

g

g

)

r

)

R

N

CUR

REN

T

R

C

URR

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage (Note 5)

V

GS(th

R

DS (ON)

V

g

fs

SD

⎯

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

⎯

G

SWITCHING CHARACTERISTICS

Total Gate Charge
Gate-Source Charge

Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

Q

⎯

g

Q

s

Q

d

t

d(on

t

⎯

t

d(off

t

⎯

f

20

V = -10V

V = -4.0V

GS

16

GS

V = -3.0V

GS

(A)

12

-30

⎯ ⎯

⎯ ⎯

⎯

⎯

-1

⎯

⎯

⎯

⎯

⎯

11
15
27

12

-0.5

⎯

⎯

⎯

⎯

1655

286
240

2.3

15.3

30.7
⎯
⎯

⎯

⎯

3.5

7.9

5.1

46
30

DMP3035LSS

V

V

= 0V, ID = -250μA

-1

±100
±800

μA

nA

-2 V

14
18

mΩ

36
⎯

-1.1 V

⎯
⎯
⎯

pF
pF
pF

⎯ Ω VGS = 0V, VDS = 0V, f = MHz

⎯

⎯ VDS = -15V, VGS = -10V, ID = -8A

nC

⎯ VDS = -15V, VGS = -10V, ID = -8A

⎯

8

⎯

⎯

ns

⎯

20

16

(A)
EN

12

GS

V

DS

V

GS

V

GS

V

DS

V

GS

V

GS

V

GS

S

V

DS

VGS = 0V, IS = -2A

V

DS

f = 1.0MHz

V

DS

V

DS

V

GS

R

= 15Ω, RG = 6Ω

D

= -30V, VGS = 0V
= ±20V, VDS = 0V
= ±25V, VDS = 0V

= VGS, ID = -250μA
= -20V, ID = -11A
= -10V, ID = -8A
= -4.5V, ID = -5A

= -10V, ID = -12A

= -20V, VGS = 0V

= -15V, VGS = -4.5V, ID = -8A
= -15V, V

= -10V, I

GS

= -8A

D

= -10V, VDS = -15V,

V = -2.5V

AI

8

D

-I , D
4

V = -1.5V

0

012345

-V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typica l O ut put Charact er istic

GS

V = -2.0V

GS

8

AIN

D

-I , D
4

0

1 1.5 2 2.5 3 3.5

-V , GATE-SOURCE VOLTA GE (V)

GS

T = 150°C

A

T = 125°C

A

T = 85°C

T = 25°C

A

T = -55°C

A

A

Fig. 2 Typical Transfer Characteristic

DMP3035LSS

Document number: DS31443 Rev. 6 - 2

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August 2009

© Diodes Incorporated

R

RAIN-SOUR

CE O

N-R

TAN

C

R

R

OUR

CE ON-R

TANC

C, CAPACITAN

C

F

OUR

CE CUR

R

N

T

DMP3035LSS

Ω

E ( )

0.025

ESIS

0.015

0.03

0.02

0.01

V = -4.5V

GS

V = -10V

GS

Ω

E ( )

0.025

ESIS

0.015

0.03

0.02

0.01

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

AIN-S

, D

0.005

DS(ON)

0

0 6 12 18 24 30

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.6

0.005

, D

DS(ON)

0

0 6 12 18 24 30

-I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain C ur r ent and Temperature

10,000

1.4

V = -10V

GS

I = -10A

D

1.2

V = -4.5V

GS

I = -5A

D

1.0

DS(ON)

R , DRAIN-SOURCE

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 Nor m alized On- R esistance vs. A m bient Te m perature

2.4

2.0

1.6

I = -250µA

1.2

D

f = 1MHz

)

E (p

C

iss

1,000

C

oss

C

rss

100

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 6 Typical Total Capacitance

20

16

(A)
E

12

T = 25°C

A

8

0.8

S

-I , S

0.4

GS(TH)

4

-V , GATE THRESHOLD VOLTAGE (V)
0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

DMP3035LSS

Document number: DS31443 Rev. 6 - 2

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0

0 0.2 0.4 0.6 0.8 1 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diod e Forward Voltage vs. Curre nt

© Diodes Incorporated

August 2009

T

R

T T

HER

R

TANC

DMP3035LSS

1

E

D = 0.7
D = 0.5

D = 0.3

ESIS

0.1

MAL

ANSIEN

r(t),

0.01

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 87°C/W

θ

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

0.001

0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)

1

Fig. 9 Transient Thermal Response

Ordering Information (Note 6)

Part Number Case Packaging

DMP3035LSS-13 SO-8 2500/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Top View

8 5

P3035LS

YY

WW

1 4

Logo
Part no.

Xth week: 01~5 2
Yea r: "07" =2007
"08" =2008

Package Outline Dimensions

Dim Min Max

E1

E

A1

L

0.254

Gaug e Plan e
Seating Plane

Detail ‘A’

e

b

D

A2

A3

A

h

°

45

7°~9

°

Detail ‘A’

DMP3035LSS

Document number: DS31443 Rev. 6 - 2

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SO-8

A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10
E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0° 8°

θ

All Dimensions in mm

August 2009

© Diodes Incorporated

DMP3035LSS

Suggested Pad Layout

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2009, Diodes Incorporated

www.diodes.com

X

Dimensions Value (in mm)

C1

C2

Y

IMPORTANT NOTICE

LIFE SUPPORT

X 0.60

Y 1.55
C1 5.4
C2 1.27

DMP3035LSS

Document number: DS31443 Rev. 6 - 2

5 of 5

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August 2009

© Diodes Incorporated