Diodes DMP3035LSS User Manual
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Features
• Low On-Resistance
• 14mΩ @ V
• 18mΩ @ V
• 36mΩ @ V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
= -20V
GS
= -10V
GS
= -4.5V
GS
TOP VIEW
DMP3035LSS
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
SO-8
S
S
S
G
TOP VIEW
Internal Schematic
D
D
D
D
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady
State
Pulsed Drain Current (Note 3)
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes: 1. Device mounted on 1 in.2 FR-4 board with 2 oz. Copper, in a still-air environment with TA = 25°C.
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
2. No purposefully added lead.
3. Repetitive rating, pulse width limited by junction temperature.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
= 25°C
T
A
= 70°C
T
A
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V
V
I
P
R
T
J, TSTG
DSS
GSS
I
D
DM
D
JA
-30 V
±25
-11
-8
V
A
-80 A
2.0 W
60 °C/W
-55 to +150 °C
August 2009
© Diodes Incorporated
)
g
g
)
r
)
R
N
CUR
REN
T
R
C
URR
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
V
GS(th
R
DS (ON)
V
g
fs
SD
⎯
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
⎯
G
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Q
⎯
g
Q
s
Q
d
t
d(on
t
⎯
t
d(off
t
⎯
f
20
V = -10V
V = -4.0V
GS
16
GS
V = -3.0V
GS
(A)
12
-30
⎯ ⎯
⎯ ⎯
⎯
⎯
-1
⎯
⎯
⎯
⎯
⎯
11
15
27
12
-0.5
⎯
⎯
⎯
⎯
1655
286
240
2.3
15.3
30.7
⎯
⎯
⎯
⎯
3.5
7.9
5.1
46
30
DMP3035LSS
V
V
= 0V, ID = -250μA
-1
±100
±800
μA
nA
-2 V
14
18
mΩ
36
⎯
-1.1 V
⎯
⎯
⎯
pF
pF
pF
⎯ Ω VGS = 0V, VDS = 0V, f = MHz
⎯
⎯ VDS = -15V, VGS = -10V, ID = -8A
nC
⎯ VDS = -15V, VGS = -10V, ID = -8A
⎯
8
⎯
⎯
ns
⎯
20
16
(A)
EN
12
GS
V
DS
V
GS
V
GS
V
DS
V
GS
V
GS
V
GS
S
V
DS
VGS = 0V, IS = -2A
V
DS
f = 1.0MHz
V
DS
V
DS
V
GS
R
= 15Ω, RG = 6Ω
D
= -30V, VGS = 0V
= ±20V, VDS = 0V
= ±25V, VDS = 0V
= VGS, ID = -250μA
= -20V, ID = -11A
= -10V, ID = -8A
= -4.5V, ID = -5A
= -10V, ID = -12A
= -20V, VGS = 0V
= -15V, VGS = -4.5V, ID = -8A
= -15V, V
= -10V, I
GS
= -8A
D
= -10V, VDS = -15V,
V = -2.5V
AI
8
D
-I , D
4
V = -1.5V
0
012345
-V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
Fig. 1 Typica l O ut put Charact er istic
GS
V = -2.0V
GS
8
AIN
D
-I , D
4
0
1 1.5 2 2.5 3 3.5
-V , GATE-SOURCE VOLTA GE (V)
GS
T = 150°C
A
T = 125°C
A
T = 85°C
T = 25°C
A
T = -55°C
A
A
Fig. 2 Typical Transfer Characteristic
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
2 of 5
www.diodes.com
August 2009
© Diodes Incorporated
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