Diodes DMP3030SN User Manual
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Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 4)
• Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
ESD protected
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady State
Pulsed Drain Current (Note 3)
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
DMP3030SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
• Case: SC59
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.014 grams (approximate)
Drain
Source
EQUIVALENT CIRCUIT
D
G
Internal Schematic
S
-30 V
±20
-0.7 A
-2.8 A
V
TOP VIEW
SC59
Gate
Gate
Protection
Diode
V
DSS
V
GSS
ID
IDM
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
R
Tj, T
Pd
JA
STG
500 mW
250
-65 to +150
°C/W
°C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
DSS
-30
⎯ ⎯
⎯ ⎯
⎯ ⎯
-10
±10 μA
V
VGS = 0V, ID = -250µA
μA
V
= -30V, VGS = 0V
DS
V
= ±20V, VDS = 0V
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
V
GS(th
R
DS (ON)
|Yfs|
VSD
-1.0
⎯
⎯
⎯
⎯
0.20
0.35
1
-0.8 -1.1 V
-3.0 V
0.25
0.45
⎯
V
= -10V, ID = -1.0mA
DS
VGS = -10V, ID = -0.4A
Ω
VGS = -4.5V, ID = -0.4A
S
VDS = -10V, ID = -0.4A
V
= 0V, IS = -0.7A
GS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
⎯
⎯
⎯
160
120
50
⎯
⎯
⎯
pF
VDS = -10V, VGS = 0V
pF
f = 1.0MHz
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMP3030SN
Document number: DS30787 Rev. 5 - 2
t
⎯
D(ON
t
⎯
D(OFF
tr ⎯
tf ⎯
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10
25
25
40
⎯
⎯
⎯
⎯
ns
ns
VDD = -10V, ID = -0.4A,
V
ns
= -5.0V, R
GS
ns
= 50Ω
GEN
August 2011
© Diodes Incorporated
NEW PRODUCT
DMP3030SN
3
-10V
-5V
-4.5V
2.5
-4V
T = 25°C
A
2
-3.5V
1.5
1
-3V
0.5
V = -2.5V
GS
0
012345
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Ch ar acteristic s
0.8
2.5
1.5
0.5
3
V = 10V
DS
2
1
T = 125°C
J
T = 25°C
J
0
0
12345
-V , GATE-SOURCE VOLTAGE (V)
GS
T = -55°C
J
Fig. 2 Typical Transfer Characteristics
1
T = 25°C
J
0.6
I = -0.4A
D
0.4
0.2
0
0246810
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 3 On-Resistance vs. Gate Voltage
0.8
0.6
Ω
0.4
V = -4.5V
GS
ON-RESIST ANCE ( )
0.2
DS(ON)
R , ST ATIC DRAIN- SOU RCE
0
-50 0 50 100 150
Fig. 5 On-Resistance Variation with Temperature
V = -10V
GS
T , AMBIENT TEMPERA TURE (°C)
A
DMP3030SN
Document number: DS30787 Rev. 5 - 2
I = -0.7A
D
I = -0.4A, -0.7A
D
I = -0.7A
D
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V = -4.5V
GS
V = -10V
GS
0.1
0 0.5 1 1.5 2 2.5 3
-I , DRAIN CURRENT (A)
D
Fig. 4 On-Resistance vs. Drain Current
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 0 50 100 150
T , AMBIENT TEMPERATURE (°C)
Fig. 6 Gat e - S ource Th r eshold Voltage with Temperature
A
August 2011
© Diodes Incorporated
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