Diodes DMP3020LSS User Manual

Product Summary

V

R

(BR)DSS

-30V

max

DS(ON)

14mΩ @ V

25mΩ @ VGS = 4.5V

= 10V

GS

Description

This MOSFET has been designed to minimize the on-state
resistance (R
performance, making it ideal for high efficiency power management

applications.

NEW PRODUCT

) and yet maintain superior switching

DS(on)

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

SO-8

Top View

I

max

D

TA = +25°C

-12.0A

-8.5A

S

S

G

SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals Connections: See Diagram

 Terminals: Finish - Matte Tin annealed over Copper lead

 Weight: 0.074g (approximate)

Top View

Internal Schematic

DMP3020LSS

UL Flammability Classification Rating 94V-0

frame. Solderable per MIL-STD-202, Method 208

D

DS

D

D

D

G

S

Equivalent circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP3020LSS-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

DMP3020LSS

Document number: DS31263 Rev. 11 - 2

8 5

P3020LS

WW

YY

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

P3020LS

YY

WW

1 4

= Manufacturer’s Marking
P3020LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 of 6

www.diodes.com

October 2013

© Diodes Incorporated



)

g

g

)

r

)

DMP3020LSS

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 5) Steady
State

Pulsed Drain Current (Note 6)

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

DM

-30 V

25

-12

-6

V

A

-40 A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

R

T

J, TSTG

D

JA

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

I

DSS

DSS

GSS

-30

 

 

 
 

-1 μA

100
800

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage (Note 7)

V

GS(th

R

DS (ON)

V

g

fs

SD



-1







11.6

18.6

12

-0.5



-2 V

14
25

mΩ



-1.1 V

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C



iss

C



oss

C



rss

R



G

1802

415
295

2.3







SWITCHING CHARACTERISTICS

2 of 6

15.3

30.7

3.5

7.9

5.1
8

46
30



 VDS = -15V, VGS = -10V, ID = -8A
 VDS = -15V, VGS = -10V, ID = -8A









Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Device mounted on 2 oz. Copper pads on FR-4 PCB with R

6. Pulse width 10μs, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

DMP3020LSS

Document number: DS31263 Rev. 11 - 2

Q



g

Q



s

Q



d

t



d(on

t



t



d(off

t



f

= 50°C/W.

JA

www.diodes.com

2.5 W
50 °C/W

-55 to +150 °C

V

V

= 0V, ID = -250μA

GS

V

= -30V, VGS = 0V

DS

= 20V, VDS = 0V

V

nA

S

GS

VGS = 25V, VDS = 0V

V

= VGS, ID = -250μA

DS

= -10V, ID = -8A

V

GS

V

= -4.5V, ID = -5A

GS

V

= -10V, ID = -12A

DS

VGS = 0V, IS = -2A

pF
pF

= -15V, VGS = 0V, f = 1.0MHz

V

DS

pF

Ω

VGS = 0V, VDS = 0V, f = MHz

= -15V, VGS = -4.5V, ID = -8A

V

DS

V

= -15V, VGS = -10V, ID = -8A

nC

ns

DS

V

= -10V, VDS = -15V,

GS

R

= 15Ω, RG = 6Ω

D

October 2013

© Diodes Incorporated