Diodes DMP3017SFG User Manual

DMP3017SFG

30V P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Product Summary

max

-11.5A

-8.7A

(BR)DSS

-30V

10mΩ @ V

18mΩ @ VGS = -4.5V

DS(ON)

max

= -10V

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

ADVANCE INFORMATION

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

ESD PROTECTE

Top View

Features and Benefits

 Low R

 Small form factor thermally efficient package enables higher

density end products

 Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

 Case: POWERDI3333-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.072 grams (approximate)

Pin 1

Bottom View

Gate Protec tion

Diode

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP3017SFG-7 POWERDI3333-8 2,000/Tape & Reel

DMP3017SFG-13 POWERDI3333-8 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

P17

DMP3017SFG

Document number: DS36479 Rev. 3 - 2

P17= Product Type Marking Code YYWW = Date Code Marking

YWW

YY = Last digit of year (ex: 13 = 2013) WW = Week code (01 ~ 53)

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December 2013

DMP3017SFG

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = -10V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 5)

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Avalanche Current (Notes 7) L = 1mH

Repetitive Avalanche Energy (Notes 7) L = 1mH

= +25°C

= +70°C

= +25°C

= +70°C

DSS

GSS

-30 V

±25 V

-11.5

-9.4

-15.2

-12.1

-3.0 A

-80 A

14 A

104 mJ

ADVANCE INFORMATION

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

= +25°C

TA = +70°C

Steady State

t < 10s 82 °C/W

= +25°C

TA = +70°C

Steady State

t < 10s 36 °C/W

θJA

θJC

J, TSTG

0.94

0.6

137 °C/W

2.2

1.3

60 °C/W

3.0 °C/W

-55 to +150 °C

POWERDI is a registered trademark of Diodes Incorporated

DMP3017SFG

Document number: DS36479 Rev. 3 - 2

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December 2013

RENT

DMP3017SFG

Electrical Characteristics (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

ADVANCE INFORMATION

Total Gate Charge (VGS = 5V) Qg

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

BODY DIODE CHARACTERISTICS

Diode Forward Voltage

Reverse Recovery Time (Note 9)

Reverse Recovery Charge (Note 9)

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

AR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

7. I

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

30.0

V= -10V

25.0

V = -5.5V

(A)

20.0

V = -5.5V

V = -4.0V

15.0

= +25°C, unless otherwise specified.)

DSS

GSS

GS(th)

DS (ON)

DSS

iss

oss

rss

-30

—

-1.0 — -3.0 V

—

V = -3.5V

D(on)

D(off)

—

8.5 10

15 18

— V

-1 μA

±10 μA

mΩ

24 — S

2246 — pF

352 — pF

294 — pF

5.1 12 Ω

20.5 — nC

41 — nC

7.6 — nC

8.0 — nC

7.5 — ns

15.4 — ns

45.6 — ns

36.8 — ns

-0.7 — V

20 — ns

9.5 — nC

V = -5.0V

ENT (A)

VGS = 0V, ID = -250μA

VDS = -24V, VGS = 0V

VGS = ±25V, VDS = 0V

VDS = VGS, ID = -250μA

= -10V, ID = -11.5A

= -4.5V, ID = -8.5A

VDS = -5V, ID = -11.5A

= -15V, VGS = 0V,

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= -15V, ID = -11.5A

= -15V, VGS = -10V,

= 6Ω, ID = -11.5A

VGS = 0V, IS = -1A

= -11.5A, dI/dt = 100A/μs

AIN

10.0

-I , D

5.0

0.0 012345

-V , DRAIN -SOURCE VOLTAGE (V)

V = -3.0V

V = -2.5V

Figure 1 Typical Output Characteristics

AIN

-I , D

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , GATE-SOURCE VOLTAGE (V)

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

Figure 2 Typical Transfer Characteristics

POWERDI is a registered trademark of Diodes Incorporated

DMP3017SFG

Document number: DS36479 Rev. 3 - 2

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December 2013

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