Diodes DMP3012LPS User Manual

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Y

W

DMP3012LPS

P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

®

5060-8

Product Summary

I

V

R

(BR)DSS

-30V

9m @ V

12m @ VGS = -4.5V

DS(ON)

GS

= -10V

D

TC = +25°C

-45A

-35A

Description and Applications

This new generation 30V P-Channel Enhancement Mode MOSFET

has been designed to minimize R

switching performance. This device is ideal for use in Notebook

battery power management and loadswitch.

• Notebook Battery Power Management

• DC-DC Converters

• Loadswitch

POWERDI5060-8

and yet maintain superior

DS(ON)

Pin1

Features and Benefits

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Low

• Low Input Capacitance

• Fast Switching Speed

• <1.1mm Package Profile – Ideal for Thin Applications

• ESD HBM Protected up to 1kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– Minimizes On State Losses

RDS(ON)

Mechanical Data

• Case: POWERDI5060-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.097 grams (approximate)

D

S

S

G

S

G

S

Internal SchematicBottom View Top View

Top View

Pin Confi

uration

D

D

D

D

Ordering Information (Note 4)

Part Number Case Packaging

DMP3012LPS-13 POWERDI5060-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

DMP3012LPS

Document number: DS35247 Rev. 2 - 2

DDD

P3010LS

Y W

SDSSG

www.diodes.com

1 of 6

= Manufacturer’s Marking
P3012LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)

April 2014

© Diodes Incorporated

V

V

DMP3012LPS

Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Continuous Drain Current (Note 6) VGS = -4.5V

Pulsed Drain Current (Notes 6)

Avalanche Current (Notes 7) L = 1mH

Avalanche Energy (Notes 7) L = 1mH

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

= +25°C

Steady

State

Steady

State

T

A

= +70°C

T

A

= +25°C

T

A

= +70°C

T

A

alue Unit

V

DSS

V

GSS

I

D

I

D

I

DM

I

AR

E

AR

-30 V

±20 V

13.2

10.5

11.4

9.1

A

A

-100 A

-24 A

292 mJ

Thermal Characteristics

Characteristic Symbol

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5) R

Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6) R

Thermal Resistance, Junction to Case @ TC = +25°C (Notes 6 ) R

Operating and Storage Temperature Range

P

D

JA

P

D

JA

JC

, T

T

J

STG

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-30 — — V

— — -1.0 A

— — ±100 nA

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V

R

DS (ON)

|Y

V

GS(th)

fs

SD

-1.1 -1.6 -2.1 V

— 7.5 9.0

— 8.5 12.0

— 30 — S

|

— -0.65 -1.0 V

m

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

g

Total Gate Charge (VGS = -10V) Qg

Total Gate Charge (VGS = -4.5V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

AS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Q

Q

t

D(on)

t

D(off)

gs

gd

t

r

t

f

— 6807 — pF

— 988 — pF

— 647 — pF

— 6.2 — 

— 139 — nC

— 66 — nC

— 19 — nC

— 21 — nC

— 8.9 — ns

— 10.5 — ns

— 254 — ns

— 95 — ns

POWERDI is a registered trademark of Diodes Incorporated.

DMP3012LPS

Document number: DS35247 Rev. 2 - 2

2 of 6

www.diodes.com

alue Unit

1.29 W

97 °C/W

2.36 W

53 °C/W

4.0 °C/W

-55 to +150 °C

VGS = 0V, ID = -250µA

VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V

VDS = VGS, ID = -250µA

V

= -10V, ID = -10A

GS

V

= -4.5V, ID = -10A

GS

VDS = -15V, ID = -10A

VGS = 0V, IS = -1A

= 15V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

= -15V, ID = -10A

V

DS

= -15V, V

V

DS

= 6, ID = -1A

R

G

= -10V,

GEN

April 2014

© Diodes Incorporated