Diodes DMP3010LPSQ User Manual

Product Summary

I

V

R

(BR)DSS

-30V

7.5m @ V
10m @ VGS = -4.5V

DS(ON)

GS

= -10V

D

TA = +25°C

-36A

-31A

Description

This new generation 30V P-Channel Enhancement Mode MOSFET

has been designed to minimize R

switching performance. This device is ideal for use in notebook

battery power management and load switch.

and yet maintain superior

DS(ON)

Applications

 Notebook Battery Power Management

 DC-DC Converters

 Loadswitch

Top View

POWERDI5060-8

Pin1

Bottom View

DMP3010LPSQ

Green

P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Features

 Thermally Efficient Package-Cooler Running Applications

 High Conversion Efficiency

 Low

 Low Input Capacitance

 Fast Switching Speed

 <1.1mm Package Profile – Ideal for Thin Applications

 ESD HBM Protected up to 1kV

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Available

– Minimizes On State Losses

RDS(ON)

Mechanical Data

 Case: POWERDI®5060-8

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram Below

 Weight: 0.097 grams (approximate)

D

G

S

Top View

Pin Configuration

Internal Schematic

®

Ordering Information (Note 4 & 5)

Part Number Qualification Case Packaging

DMP3010LPSQ-13 Automotive POWERDI®5060-8 2,500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

DMP3010LPSQ

Document number: DS36683 Rev. 3 - 2

D

D

P3010LS

YY WW

S

S

D

D

= Manufacturer’s Marking
P3010LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)

G

S

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January 2014

© Diodes Incorporated

)

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

= +25°C

Continuous Drain Current (Note 7) VGS = 10V

Continuous Drain Current (Note 7) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

Steady

State

Steady

State

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

Pulsed Drain Current (Notes 6 & 9)
Avalanche Current (Notes 10 & 11)
Repetitive Avalanche Energy (Notes 10 & 11) L = 1mH

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) R
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) R
Power Dissipation (Notes 7 & 8)
Thermal Resistance, Junction to Case @TC = +25°C (Notes 7 & 8) R
Operating and Storage Temperature Range

T

DMP3010LPSQ

V

DSS

V

GSS

I

D

I

D

I

D

I

DM

I

AR

E

AR

P

D

JA

P

D

JA

P

D

JC

, T

J

STG

-30 V

±20 V

-36

-29

-31

-25

-14.5

-11.5

A

A

A

-100 A

-17.5 A
153 mJ

2.18 W
55 °C/W

14.37 W

8.7 °C/W

58.7 W

2.13 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 11)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

I

GSS

DSS

DSS

-30 — — V
— —
— —

-1 A

±100 nA

VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 11)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS(ON)

|Y
V

fs

SD

-1.1 -1.6 -2.1 V
—
—

|

—
—

5.7 7.5

7.2 10
30 — S

-0.65 -1 V

VDS = VGS, ID = -250µA
V

= -10V, ID = -10A

m

GS

V

= -4.5V, ID = -10A

GS

VDS = -15V, ID = -10A
VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = -10V) Qg
Total Gate Charge (VGS = -4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. Device mounted on FR-4 PCB with 1 inch square 2 oz. Copper, single sided.

7. Device mounted on FR-4 PCB with infinite heatsink.

8. R

9. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%.

10. I

11. Short duration pulse test used to minimize self-heating effect.

is guaranteed by design while R

JC

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

AR

12. Guaranteed by design. Not subject to production testing.

is determined by the user’s board design.

CA

Q
Q

t

D(on

t

D(off

s

d

t

t

f

—
—
—
—
—
—
—
—
—
—
—
—

6234
1500

774

1.28

126.2

59.2

16.1

15.7

11.4

9.4

260.7

99.3

—
—
—
—
—
—
—
—
—
—
—
—

pF

V

= 15V, VGS = 0V,

pF
pF



nC
nC
nC
nC

DS

f = 1MHz

VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -10A

= -15V, VGS = -4.5V,

V

DS

I

= -10A

D

ns
ns
ns

= -15V, V

V

DS

= 6, ID = -1A

R

G

ns

GEN

= -10V,

POWERDI is a registered trademark of Diodes Incorporated.

DMP3010LPSQ

Document number: DS36683 Rev. 3 - 2

2 of 7

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January 2014

© Diodes Incorporated

D

RAIN CUR

REN

T

R

CUR

R

T

R

R

OUR

CE ON-R

TANC

R

R

OUR

CE ON-R

TANC

R

R

N-SOUR

C

DMP3010LPSQ

(A)

30

25

20

15

V = -10V

GS

V = -4.5V

GS

V = -5.0V

GS

V = -3.5V

GS

V = -3.0V

GS

V = -2.5V

GS

(A)

EN

30

25

20

15

V = -5V

DS

AIN

10

D

-I ,

5

V = -2.0V

0

0 0.5 1 1.5 2 2.5 3 3.5 4

-V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typical Output Characteristic

0.020



E ( )

10

D

-I , D

5

T = 150°C

A

T = 125°C

A

0

0 0.5 1 1.5 2 2.5 3

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

0.016



E ( )

0.014

V = -4.5V

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.016

0.012

ESIS

AIN-S

, D

DS(ON)

0.012

0.008

V = -4.5V

GS

V = -10V

0.004

0

0 5 10 15 20 25 30

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

GS

vs. Drain Current and Gate Voltage

ESIS

0.010

0.008

0.006

AIN-S

0.004

, D

0.002

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN CURRENT (A)

D

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

A

1.6

1.4

0.020

0.016

E

1.2

0.012

AI

V = -4.5V

1.0

V = -10V

GS

I = -20A

DSON

R , DRAIN-SOURCE

POWERDI is a registered trademark of Diodes Incorporated.

DMP3010LPSQ

Document number: DS36683 Rev. 3 - 2

D

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150

V = -4.5V

GS

I = -10A

D

T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

3 of 7

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, D

DSON

0.008

0.004

ON-RESISTANCE (NORMALIZED)

GS

I = -10A

D

V = -10V

GS

I = -20A

D

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On-Resistance Variation with Temperature

January 2014

© Diodes Incorporated