Diodes DMP3010LK3 User Manual
D
G
G
D
Product Summary
I
V
(BR)DSS
-30V
R
8mΩ @ V
10.2mΩ @ VGS = -4.5V
DS(on) max
GS = -10V -17A
D
TA = 25°C
-14.5A
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Backlighting
) and yet maintain superior switching
DS(on)
TO252
Top View
Top View
Pin-Out
DMP3010LK3
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• "Green" Device (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TO252 (DPAK)
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (approximate)
D
S
Equivalent Circuit
S
Ordering Information (Note 2)
Part Number Qualification Case Packaging
DMP3010LK3-13 Commercial TO252 2,500/Tape & Reel
DMP3010LK3Q-13 Automotive TO252 2,500/Tape & Reel
Notes: 1. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
2. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMP3010LK3
Document number: DS35716 Rev. 4 - 2
P3010L
YYWW
1 of 7
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Logo
Part no.
Xth week: 01 ~ 53
Year: “11” = 2011
.
February 2012
© Diodes Incorporated
)
g
g
g
)
r
)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = -10V
Continuous Drain Current (Note 4) VGS = -4.5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 4)
Avalanche Current (Note 5)
Avalanche Energy (Note 5)
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Steady
State
t<10s
Steady
State
t<10s
DMP3010LK3
V
DSS
V
GSS
T
= 25°C
A
= 70°C
T
A
= 25°C
T
A
T
= 70°C
A
T
= 25°C
A
= 70°C
T
A
= 25°C
T
A
T
= 70°C
A
Steady state
t<10s 29 °C/W
Steady state
t<10s 15 °C/W
E
I
I
I
I
I
I
DM
I
AS
D
D
D
D
S
AS
R
R
T
J, TSTG
P
D
JA
θ
P
D
JA
θ
-30 V
±20 V
-17.0
-13.0
-27.0
-21.0
-14.5
-11.5
-23.0
-18.0
A
A
A
A
-100 A
5.5 A
47 A
113 mJ
1.7 W
72 °C/W
3.4 W
37 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-30
⎯ ⎯
⎯ ⎯
⎯ ⎯
-1
±100
V
VGS = 0V, ID = -250μA
µA
V
= -30V, VGS = 0V
nA
DS
V
= ±20V, VDS = 0V
GS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
R
DS (ON)
|Y
V
GS(th
fs
SD
-1.1 -1.6 -2.1 V
⎯
⎯
|
⎯
⎯
6.5 8
7.2 10.2
30
⎯
-0.65 -1.0 V
VDS = VGS, ID = -250μA
= -10V, ID = -10A
V
mΩ
GS
= -4.5V, ID = -10A
V
GS
S
V
= -15V, ID = -10A
DS
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 3. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Guaranteed by design. Not subject to production testing.
4. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
5 .UIS in production with L = 0.1mH, T
6. Short duration pulse test used to minimize self-heating effect.
= 25°C
J
C
⎯
iss
C
⎯
oss
C
⎯
rss
R
⎯
G
Q
⎯
Q
⎯
s
Q
⎯
d
t
⎯
D(on
t
⎯
t
⎯
D(off
t
⎯
f
6234
1500
774
1.28
59.2
16.1
15.7
11.4
9.4
260.7
99.3
⎯
⎯
⎯
pF
= 15V, VGS = 0V
V
DS
f = 1.0MHz
⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
⎯
⎯
⎯
nC
= -15V, VGS = -4.5V,
V
DS
= -10A
I
D
⎯
⎯
⎯
ns
= -15V, V
V
DS
= 6Ω, ID = -1A
R
G
GEN
= -10V,
⎯
DMP3010LK3
Document number: DS35716 Rev. 4 - 2
2 of 7
www.diodes.com
February 2012
© Diodes Incorporated
RAIN CUR
REN
T
R
C
URRENT
R
R
OUR
CE ON-R
TANC
R
R
OUR
CE ON-R
TANC
R
R
OUR
C
DMP3010LK3
30
V = -10V
GS
25
(A)
20
15
V = -4.5V
GS
V = -5.0V
GS
V = -3.5V
GS
V = -3.0V
GS
V = -2.5V
GS
30
25
V = -5V
DS
(A)
20
15
AIN
10
D
-I , D
5
V = -2.0V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
-V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
Fig. 1 Typical Output C har acteristic
0.020
Ω
E ( )
10
D
-I , D
5
T = 150°C
A
T = 125°C
A
0
0 0.5 1 1.5 2 2.5 3
-V , GATE-SOURCE VOLT AGE (V)
GS
Fig. 2 Typic al Transfer Characteristi c
0.016
Ω
E ( )
0.014
V = -4.5V
GS
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.016
0.012
ESIS
AIN-S
, D
DS(ON)
0.012
0.008
V = -4.5V
GS
V = -10V
0.004
0
0 5 10 15 20 25 30
-I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
GS
vs. Drain C urrent an d G at e Vol tage
1.6
ESIS
0.010
0.008
0.006
AIN-S
0.004
, D
0.002
DS(ON)
0
0 5 10 15 20 25 30
-I , DRAIN CURRENT (A)
D
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
T = -55°C
Fig. 4 Typical On-Resistance
vs. Drain C urrent an d Temperatu r e
0.020
A
A
1.4
0.016
E
1.2
0.012
AIN-S
V = -4.5V
1.0
V = -10V
GS
I = -20A
DSON
R , DRAIN-SOURCE
D
0.8
ON-RESISTANCE (NORMALIZED)
0.6
-50 -25 0 25 50 75 100 125 150
V = -4.5V
GS
I = -10A
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 On-Resistance Variation with Temperature
, D
0.008
DSON
0.004
ON-RESISTANCE (NORMALIZED)
GS
I = -10A
D
V = -10V
GS
I = -20A
D
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 6 On- Resistance Variati on with Temperature
DMP3010LK3
Document number: DS35716 Rev. 4 - 2
3 of 7
www.diodes.com
February 2012
© Diodes Incorporated
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