Diodes DMP3010LK3 User Manual

D

G

D

Product Summary

I

V

(BR)DSS

-30V

R

8mΩ @ V

10.2mΩ @ VGS = -4.5V

DS(on) max

GS = -10V -17A

D

TA = 25°C

-14.5A

Description and Applications

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

• DC-DC Converters

• Power management functions

• Backlighting

) and yet maintain superior switching

DS(on)

TO252

Top View

Pin-Out

DMP3010LK3

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• "Green" Device (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252 (DPAK)

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

D

S

Equivalent Circuit

S

Ordering Information (Note 2)

Part Number Qualification Case Packaging

DMP3010LK3-13 Commercial TO252 2,500/Tape & Reel

DMP3010LK3Q-13 Automotive TO252 2,500/Tape & Reel

Notes: 1. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

2. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMP3010LK3

Document number: DS35716 Rev. 4 - 2

P3010L

YYWW

1 of 7

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Logo Part no.

Xth week: 01 ~ 53 Year: “11” = 2011

.

February 2012

)

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = -10V

Continuous Drain Current (Note 4) VGS = -4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 4) Avalanche Current (Note 5) Avalanche Energy (Note 5)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range

Steady

State t<10s

Steady

State t<10s

DMP3010LK3

V

DSS

V

GSS

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

Steady state

t<10s 29 °C/W

Steady state

t<10s 15 °C/W

E

I

DM

I

AS

D

S

AS

R

T

J, TSTG

P

D

JA

θ

P

D

JA

θ

-30 V

±20 V

-17.0

-13.0

-27.0

-21.0

-14.5

-11.5

-23.0

-18.0

A

-100 A

5.5 A 47 A

113 mJ

1.7 W 72 °C/W

3.4 W 37 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-30

⎯ ⎯

-1

±100

V

VGS = 0V, ID = -250μA

µA

V

= -30V, VGS = 0V

nA

DS

V

= ±20V, VDS = 0V

GS

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage

V

R

DS (ON)

|Y V

GS(th

fs

SD

-1.1 -1.6 -2.1 V

⎯ ⎯

|

⎯ ⎯

6.5 8

7.2 10.2 30

⎯

-0.65 -1.0 V

VDS = VGS, ID = -250μA

= -10V, ID = -10A

V

mΩ

GS

= -4.5V, ID = -10A

V

GS

S

V

= -15V, ID = -10A

DS

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 3. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Guaranteed by design. Not subject to production testing.

4. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 5 .UIS in production with L = 0.1mH, T

6. Short duration pulse test used to minimize self-heating effect.

= 25°C

J

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯

G

Q

⎯

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

6234 1500

774

1.28

59.2

16.1

15.7

11.4

9.4

260.7

99.3

⎯ ⎯ ⎯

pF

= 15V, VGS = 0V

V

DS

f = 1.0MHz

⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz ⎯ ⎯ ⎯

nC

= -15V, VGS = -4.5V,

V

DS

= -10A

I

D

⎯ ⎯ ⎯

ns

= -15V, V

V

DS

= 6Ω, ID = -1A

R

G

GEN

= -10V,

⎯

DMP3010LK3

Document number: DS35716 Rev. 4 - 2

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February 2012

RAIN CUR

REN

T

R

C

URRENT

R

OUR

CE ON-R

TANC

R

OUR

CE ON-R

TANC

R

OUR

C

DMP3010LK3

30

V = -10V

GS

25

(A)

20

15

V = -4.5V

GS

V = -5.0V

GS

V = -3.5V

GS

V = -3.0V

GS

V = -2.5V

GS

30

25

V = -5V

DS

(A)

20

15

AIN

10

D

-I , D 5

V = -2.0V

0

0 0.5 1 1.5 2 2.5 3 3.5 4

-V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typical Output C har acteristic

0.020

Ω

E ( )

10

D

-I , D 5

T = 150°C

A

T = 125°C

A

0

0 0.5 1 1.5 2 2.5 3

-V , GATE-SOURCE VOLT AGE (V)

GS

Fig. 2 Typic al Transfer Characteristi c

0.016

Ω

E ( )

0.014

V = -4.5V

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.016

0.012

ESIS

AIN-S , D

DS(ON)

0.012

0.008

V = -4.5V

GS

V = -10V

0.004

0

0 5 10 15 20 25 30

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

GS

vs. Drain C urrent an d G at e Vol tage

1.6

ESIS

0.010

0.008

0.006

AIN-S

0.004

, D

0.002

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN CURRENT (A)

D

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

T = -55°C

Fig. 4 Typical On-Resistance

vs. Drain C urrent an d Temperatu r e

0.020

A

1.4

0.016

E

1.2

0.012

AIN-S

V = -4.5V

1.0

V = -10V

GS

I = -20A

DSON

R , DRAIN-SOURCE

D

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150

V = -4.5V

GS

I = -10A

D

T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

, D

0.008

DSON

0.004

ON-RESISTANCE (NORMALIZED)

GS

I = -10A

D

V = -10V

GS

I = -20A

D

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On- Resistance Variati on with Temperature

DMP3010LK3

Document number: DS35716 Rev. 4 - 2

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February 2012

OUR

CE CUR

RENT

C

UNC

TION CAPACITANC

F

GE CUR

REN

T

OUR

C

OLT

G

P, P

T

RAN

N

T

P

O

R

θ

DMP3010LK3

2.5

2.0

30

25

(A)

20

I = -1mA

I = -250µA

D

T = 25°C

15

A

1.5

1.0 10

S

0.5

GS(TH)

-V , GATE THRESHOLD VOLTAGE (V) 0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

10,000

)

C

iss

E (p

-I , S 5

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

100,000

10,000

(nA)

T = 150°C

A

C

oss

1,000

T = 125°C

A

1,000

C

rss

, J

T

100

f = 1MHz

0 4 8 121620

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Total Capacitance

10

V = -15V

8

E(V)

DS

I = -10A

D

A

6

E V

4

E-S

GS

2

-V , A

DSS

-I , LEAKA

100

10

1

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

DS

T = 85°C

A

T = 25°C

A

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

100

Single Pulse R = 72°C/W

θ

JA

R (t) = r(t) * R

θθ

JA JA

T - T

= P * R

JA JA

(W) WE

SIE

90 80 70 60 50 40 30

EAK

20

(pk)

10

0

0 20406080100120140

Q , OTAL GATE CHARGE (nC)

T

g

Fig. 11 Gate-Source Voltage vs. Total Gate Charge

0

0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec)

Fig. 12 Single Pulse Maximum Power Dissipation

DMP3010LK3

Document number: DS35716 Rev. 4 - 2

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C

R

NCH

N

R

G

Y

T

R

T T

HER

R

TANC

DMP3010LK3

700

Starting Temperature (T ) = 25°C

J

600

E

(mJ)

500

AS

E

400

E E

I

AS

300

200

AS

E , AVALA

100

0

0.2 0.4 0.6 0.8 1.0

0.1 0.3 0.5 0.7 0.9

80

70

60

50

40

30

20

10

0

I , AVALAN

AS

HE U

ENT (A)

INDUCTOR (mH)

Fig. 13 Sin gle-Pulse Aval anche Tested

1

D = 0.7

E

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.50

D = 0.9

D = 0.02

0.01

ANSIEN

r(t),

D = 0.01

D = 0.005

D = Single Pulse

R (t) = r(t) * R

θθ

JA JA

R = 72°C/W

θ

JA

Duty Cycle, D = t1/ t2

0.001

0.001 0.01 0.1 1 10 100 1,000 10,000 t1, PULSE DURATION TIMES (sec)

Fig. 14 Transient Thermal Resistance

DMP3010LK3

Document number: DS35716 Rev. 4 - 2

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February 2012

Package Outline Dimensions

2X b2

E

b3

L3

D

H

L4

e

3X b

Suggested Pad Layout

X2

Y2

Y1

X1

E1

DMP3010LK3

Dim Min Max Typ

A

c2

A2

A1

L

a

Z

C

E1

Dimensions Value (in mm)

Z 11.6 X1 1.5 X2 7.0 Y1 2.5 Y2 7.0

C 6.9 E1 2.3

A1 0.00 0.13 0.08 A2 0.97 1.17 1.07

b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531

D1 5.21

E1 4.32

L3 0.88 1.27 1.08 L4 0.64 1.02 0.83

TO252

A 2.19 2.39 2.29

b 0.64 0.88 0.783

D 6.00 6.20 6.10

− −

e

− −

E 6.45 6.70 6.58

H 9.40 10.41 9.91 L 1.40 1.78 1.59

a 0° 10°

All Dimensions in mm

2.286

− −

−

DMP3010LK3

Document number: DS35716 Rev. 4 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMP3010LK3

Document number: DS35716 Rev. 4 - 2

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Diodes DMP3010LK3 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual