Diodes DMP3008SFG User Manual

30V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
I
max
D
-8.6A
-7.1A
V
(BR)DSS
-30V
R
17m @ V
25m @ VGS = -4.5V
DS(ON)
max
= -10V
GS
TA = 25°C
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Backlighting
ADVANCE INFORMATION
Power Management Functions
DC-DC Converters
Top View
POWERDI3333-8
D
D
D
Features and Benefits
Low R
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
– ensures on state losses are minimized
DS(ON)
Mechanical Data
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Drain
Pin 1
S
S
S
G
Gate
D
Bottom View Internal Schematic
Source
Ordering Information (Note 4)
Part Number Case Packaging
DMP3008SFG-7 POWERDI3333-8 2000/Tape & Reel
DMP3008SFG-13 POWERDI3333-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
4. For packaging details, go to our website at http://www.diodes.com.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Marking Information
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
S31 = Product Type Marking Code
YYWW
S31
YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53)
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θ
R
C
URRENT
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage Gate-Source Voltage
Steady
Continuous Drain Current (Note 6) VGS = -10V
State t<10s
Steady
Continuous Drain Current (Note 6) VGS = -4.5V
State t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6)
T
= 25°C
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
-30 V
±20 V
-8.6
-7.0
-11.7
-9.3
-7.1
-5.6
-9.6
-7.6
A
A
A
A
-80 A
-3.0 A
ADVANCE INFORMATION
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5)
Steady state
t<10s 72 °C/W
Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6)
Steady state
t<10s 30 °C/W Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
P
R
P R R
T
J, TSTG
D
JA
θ
D
JA
θ
JC
0.9 W
140 °C/W
2.2 W 57 °C/W
7.1 °C/W
-55 to +150 °C
100
R
DS(on)
Limited
10
(A)
DC
P = 10s
1
AIN
D
0.1
-I , D
0.01
0.1 1 10
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
T = 150°C
J(max)
T = 25°C
A
Single Pulse
-V , DRAIN-SOURCE VOLT AGE (V)
DS
Fig. 1 SOA, Safe Oper ation Area
P = 10sWµ
W
100
100
90 80 70
Single Pulse R = 57C/W
θ
JA
R = r * R
θθ
JA(t) (t) JA
T - T = P * R
JA JA(t)
60 50 40 30 20
(PK)
P , PEAK TRANSIENT POIWER (W)
10
0
0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
°
θ
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
2 of 7
www.diodes.com
May 2012
© Diodes Incorporated
T
R
T T
HER
R
TANC
)
g
g
)
r
)
1
D = 0.7
E
D = 0.5 D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
D = 0.9
R (t) = r(t) * R
θθ
JA JA
R = 57°C/W
θ
JA
Duty Cycle, D = t1/ t2
t1, PULSE DURATION TIMES (sec)
ADVANCE INFORMATION
Fig. 3 Transient Thermal Resistance
Electrical Characteristics T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-30
-1.0
±100
V
VGS = 0V, ID = -250µA
µA
V
= -30V, VGS = 0V
DS
nA
V
= ±20V, VDS = 0V
GS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y V
SD
-1.1 -1.6 -2.1 V
⎯ ⎯ ⎯
|
fs
12.5 17
18.5 25 13
-0.7 -1.0 V
VDS = VGS, ID = -250μA
= -10V, ID = -10A
V
mΩ
GS
= -4.5V, ID = -10A
V
GS
S
V
= -15V, ID = -10A
DS
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
C
iss
C
oss
C
rss
R
G
Total Gate Charge (VGS = -10V) Qg Total Gate Charge (VGS = -4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Q
s
Q
d
t
D(on
t
t
D(off
t
f
2230
328 294
6.4 47 23
9.4
5.6
10.5
8.5 90 40
⎯ ⎯ ⎯
pF
= -15V, VGS = 0V
V
DS
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz ⎯
nC
= -15V, ID = -10A
V
DS
⎯ ⎯ ⎯ ⎯
ns
= -10V, VDS = -15V, RG = 6Ω
V
GS
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
3 of 7
www.diodes.com
May 2012
© Diodes Incorporated
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