Diodes DMP2540UCB9 User Manual

NEW PRODUCT

Product Summary

V

R

(BR)DSS

-25V

40m @ V

DS(ON)

GS

= -4.5V

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

• Battery Management

• Load Switch

• Battery Protection

ADVANCE INFORMATION

ESD PROTECTED TO 6kV

) and yet maintain superior switching

DS(on)

I

D

TA = 25°C

-5.2 A

GDS

DDS

DSS

Top-View

Pin Configuration

DMP2540UCB9

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Qg & Qgd

• Small Footprint 1.5-mm × 1.5-mm

• Gate ESD Protection 6kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-WLB1515-9

• Terminal Connections: See Diagram Below

• Weight: 0.0018 grams (approximate)

Drain

Gate

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMP2540UCB9-7 U-WLB1515-9 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2540UCB9

Document number: DS35611 Rev. 4 - 2

3W
YM

www.diodes.com

3W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

June 2012

© Diodes Incorporated

θ

θ

)

r

r

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -4.5V
Pulsed Drain Current (Pulse duration 10s, duty cycle 1%)

Continuous Source Pin Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10s, duty cycle 1%)
Continuous Gate Clamp Current (Note 5)
Pulsed Gate Clamp Current (Pulse duration 10s, duty cycle 1%)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

Steady

State

Steady

State

T

= 25C

A

= 70C

T

A

T

= 25C

A

T

= 70C

A

P

P
R
R

T

J, TSTG

DMP2540UCB9

V

DSS

V

GSS

I

D

I

D

I

DM

I

S

I

SM

I

G

I

GM

D
D
JA
JA

-55 to +150 °C

-25 V

-6 V

-4.0

-3.0

-5.2

-4.0

A

A

-30 A

-2.0 A

-15 A

-0.6 A

-8 A

1.0 W

1.8 W

126.8 °C/W
69 °C/W

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

-25 - - V

- - -1 A

- - -100 nA

VGS = 0V, ID = -250A
VDS = -20V, VGS = 0V

VGS = -6V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)
Reverse Recovery Charge
Reverse Recovery Time

V

GS(th

R

DS (ON)

|Y
V

Q

fs

SD

r

t

r

-0.4 -0.6 -1.1 V
33 40

-

42 50
52 60

|

- 12 - S

- -0.7 -1 V
100

­130

-

VDS = VGS, ID = -250A
V

m

GS

V

GS

V

GS

VDS = -10V, ID = -2A
VGS = 0V, IS = -2A

- nC

- ns

V

dd

200A/s

= -4.5V, ID = - 2A
= -2.5V, ID = -2A
= -1.8V, ID = -2A

= –9.5V, IF = –2A, di/dt =

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Device mounted on FR4 material with 1-inch

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

2

(6.45-cm2), 2-oz. (0.071-mm thick) Cu

DMP2540UCB9

Document number: DS35611 Rev. 4 - 2

C

iss

C

oss

C

rss

R

G

Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

- 342 450 pF

- 174 225 pF

- 70 90 pF

28 35 

- 4.8 6.0 nC

- 0.5 - nC

- 1.0 - nC

- 11 - ns

- 12 - ns

- 56 - ns

- 42 - ns

2 of 6

V

= -10V, VGS = 0V,

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
V

= -4.5V, VDS = -10V,

GS

I

= -2A

D

V

= -10V, VGS = -4.5V,

DD

= -2A, RG = 2,

I

DS

June 2012

© Diodes Incorporated