Diodes DMP2305UVT User Manual

f
D
Product Summary
Max I
Max R
V
(BR)DSS
-20V
60mΩ @ V 90mΩ @ VGS = -2.5V
113mΩ @ VGS = -1.8V
DS(on)
(Note 6)
GS
= -4.5V
D
TA = 25°C
-4.23A
-3.49A
-3.11A
Description
This new generation MOSFET has been designed to minimize the on­state resistance (R performance, making it ideal for high efficiency power management applications.
) and yet maintain superior switching
DS(on)
Applications
DC-DC Converters
Motor Control
Power management functions
Analog Switch
TSOT26
Top View
1
DD
2
DD
GS
3
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DMP2305UVT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Finish – Matte Tin annealed over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0013 grams (approximate)
6
5
4
Top View
Pin-Out
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMP2305UVT-7 2305 7 8 3,000
DMP2305UVT-13 2305 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
2305
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
2305 = Product Type Marking Code
YM
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YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)
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θ
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DMP2305UVT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -2.5V
Steady
State
Steady
State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%)
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
(Note 5) (Note 6) 1.64 (Note 5) (Note 6) 76
P
R R
T
J, TSTG
D
JA
θ
JC
-20 V ±8 V
-4.23
-2.98
-3.49
-2.79
A
A
-4.23 A
-16 A
1.25
100
14
-55 to 150 °C
W
°C/W
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
2 of 8
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f
P, P
T
RAN
N
T P
O
R
T
R
T T
HER
R
TANC
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Diodes Incorporated
DMP2305UVT
Thermal Characteristics (@T
100
(W)
80
IWE
60
SIE
40
EAK
20
(PK)
0
0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)
Figure 1 Single Pulse Maximum Power Dissipation
1
D = 0.7
E
D = 0.5 D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
= +25°C, unless otherwise specified.)
A
Single Pulse R = 110C/W
°
θ
JA
R = r * R
θθ
JA(t) (t) JA
T - T = P * R
JA JA(t)
θ
D = 0.9
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
R (t) = r(t) * R
θθ
JA JA
R = 110°C/W
θ
JA
Duty Cycle, D = t1/ t2
t1, PULSE DURATION TIMES (sec)
Figure 2 Transient Thermal Resis tance
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
3 of 8
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August 2012
© Diodes Incorporated
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