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Product Summary
Max I
Max R
V
(BR)DSS
-20V
60mΩ @ V
90mΩ @ VGS = -2.5V
113mΩ @ VGS = -1.8V
DS(on)
(Note 6)
GS
= -4.5V
D
TA = 25°C
-4.23A
-3.49A
-3.11A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
• DC-DC Converters
• Motor Control
• Power management functions
• Analog Switch
TSOT26
Top View
1
DD
2
DD
GS
3
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Diodes Incorporated
DMP2305UVT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Finish – Matte Tin annealed over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0013 grams (approximate)
6
5
4
Top View
Pin-Out
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMP2305UVT-7 2305 7 8 3,000
DMP2305UVT-13 2305 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
2305
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
2305 = Product Type Marking Code
YM
www.diodes.com
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
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Diodes Incorporated
DMP2305UVT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -2.5V
Steady
State
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
(Note 5)
(Note 6) 1.64
(Note 5)
(Note 6) 76
P
R
R
T
J, TSTG
D
JA
θ
JC
-20 V
±8 V
-4.23
-2.98
-3.49
-2.79
A
A
-4.23 A
-16 A
1.25
100
14
-55 to 150 °C
W
°C/W
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
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P, P
T
RAN
N
T P
O
R
T
R
T T
HER
R
TANC
Product Line o
Diodes Incorporated
DMP2305UVT
Thermal Characteristics (@T
100
(W)
80
IWE
60
SIE
40
EAK
20
(PK)
0
0.001 0.01 0.1 1 10 100 1,0000.0001
t1, PULSE DURATION TIME (sec)
Figure 1 Single Pulse Maximum Power Dissipation
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
= +25°C, unless otherwise specified.)
A
Single Pulse
R = 110C/W
°
θ
JA
R = r * R
θθ
JA(t) (t) JA
T - T = P * R
JA JA(t)
θ
D = 0.9
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
R (t) = r(t) * R
θθ
JA JA
R = 110°C/W
θ
JA
Duty Cycle, D = t1/ t2
t1, PULSE DURATION TIMES (sec)
Figure 2 Transient Thermal Resis tance
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
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)
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g
g
)
r
)
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Diodes Incorporated
DMP2305UVT
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
DSS
I
⎯ ⎯
DSS
I
⎯ ⎯
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
V
GS(th
R
DS (ON)
|Y
|
fs
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
C
iss
C
oss
C
rss
R
G
Q
⎯
Q
⎯
s
Q
⎯
d
t
⎯
D(on
t
⎯
t
⎯
D(off
t
⎯
f
-20
⎯ ⎯
-1 µA
±100
-0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
45 60
60 90
87 113
9
727
69
64
23
7.6
1.4
1.2
14.0
13.0
53.8
23.2
-0.9 V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
nA
V
= ±8V, VDS = 0V
GS
VDS = VGS, ID = -250μA
V
= -4.5V, ID = -4.2A
mΩ
S
pF
Ω
nC
ns
GS
= -2.5V, ID = -3.4A
V
GS
= -1.8V, ID = -2.0A
V
GS
V
= -5V, ID = -4A
DS
V
= -20V, VGS = 0V
DS
f = 1.0MHz
VGS = 0V, V
= -4.5V, V
V
GS
= -4V, V
V
DS
R
= 4Ω, RG = 6Ω, ID = -1A
L
= 0V, f = 1.0MHz
DS
= -4V, ID = -3.5A
DS
= -4.5V,
GS
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
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R
N
CUR
REN
T
R
CUR
RENT
R
R
OUR
CE ON-R
TANC
R
RAIN-SOUR
CE O
N-R
TAN
C
R
R
OUR
C
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20
V = -8V
GS
20
Diodes Incorporated
DMP2305UVT
V = -4.5V
16
(A)
GS
V = -3.0V
GS
V = -2.5V
GS
12
AI
8
D
-I , D
V = -2.0V
GS
4
V = -1.5V
GS
0
0123 45
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 3 Typical Output Characteristic
0.1
Ω
E ( )
0.08
ESIS
V = -2.5V
0.06
0.04
GS
V = -4.5V
GS
AIN-S
0.02
, D
V = -5V
16
DS
(A)
12
AIN
8
D
-I , D
4
0
T = 150°C
A
T = 125°C
A
T = 25°C
T = -55°C
A
T = 85°C
A
A
0 0.5 1 1.5 2 2.5 3
-V , GATE-SOURCE VOLT A GE (V)
0.1
Ω
E ( )
0.08
GS
Figure 4 Typical Transfer Characteristic
V = -4.5V
GS
T = 150°C
A
ESIS
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
, D
0.06
0.04
0.02
DS(ON)
0
0 5 10 15 20
-I , DRAIN-SOURCE CURRENT (A)
D
Figure 5 Typical On-Resistance
vs. Drain C urrent an d G at e Voltage
1.6
1.4
DS(ON)
0
048121620
-I , DRAIN CURRENT (A)
D
Figure 6 Typical On-Resistance
vs. Drain C urrent an d Temperature
0.1
Ω
0.08
E
V = -2.5V
1.2
0.06
GS
I = -5A
D
AIN-S
, D
1.0
V = -4.5V
GS
ON-RESISTANCE (NORMALIZED)
0.8
I = -10A
D
V = -2.5V
GS
I = -5A
D
DSON
0.6
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
A
0.04
V = -4.5V
GS
I = -10A
D
0.02
DSON
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 8 On - R esistance Variat ion with Temperature
A
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
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C
CUR
RENT
C, CAPACITAN
C
F
GE CUR
RENT
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1.0
20
Diodes Incorporated
DMP2305UVT
0.8
I = -1mA
D
0.6
I = -250µA
D
0.4
0.2
GS(TH)
-V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 9 Gate Threshold Variation vs. Ambient Temperature
A
10,000
)
1,000
E (p
C
iss
16
(A)
12
T = 25°C
E
A
8
S
-I , S
4
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 10 Diode Forward Voltage vs. Current
10,000
T = 150°C
A
1,000
(nA)
T = 125°C
A
100
T = 85°C
A
C
100
10
048121620
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figur e 11 Typical Total Capacitan ce
oss
C
rss
DSS
1
-I , LEAKA
T = 25°C
A
T = -55°C
A
0.1
0 2 4 6 8 1012 14161820
-V , DRAIN-SOURCE VOL TAGE (V)
DS
Figure 12 Typical Leakage Current vs. Drain-Source Voltage
10
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1
A2
A
A1
D
e1
E
c
L
4x 1
e
6x b
θ
L2
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y1
C C
X (6x)
Y (6x)
Dimensions Value (in mm)
C 0.950
X 0.700
Y 1.000
Y1 3.199
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Diodes Incorporated
TSOT26
Dim Min Max Typ
A
A1 0.01 0.10
A2 0.84 0.90
D
E
E1
b 0.30 0.45
c 0.12 0.20
e
e1
L 0.30 0.50
L2
θ 0° 8° 4°
θ1 4° 12°
All Dimensions in mm
1.00
−
− −
− −
− −
− −
− −
− −
−
−
−
2.90
2.80
1.60
−
−
0.95
1.90
0.25
−
DMP2305UVT
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
Diodes Incorporated
DMP2305UVT
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
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