Diodes DMP2305U User Manual

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Features

 Low On-Resistance

 60mΩ @ V
 90mΩ @ V
 113mΩ @ V

 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP Capable (Note 4)

NEW PRODUCT

= -4.5V

GS

= -2.5V

GS

= -1.8V

GS

Top View

P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below
 Weight: 0.008 grams (approximate)

Drain

Gate

Source

Internal Schematic To

G

D

View

DMP2305U

S

Ordering Information (Note 4&5)

Part Number Qualification Case Packaging

DMP2305U-7 Standard SOT23 3000/Tape & Reel

DMP2305UQ-7 Automotive SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

DMP2305U

Document number: DS31737 Rev. 6 - 2

23P

Shanghai A/T Site

YM

www.diodes.com

23P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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© Diodes Incorporated

October 2013

)

g

g

g

)

r

)

DMP2305U

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6)

Pulsed Drain Current (Note 7)

Steady

State

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

DM

-20 V
±8 V

-4.2

-3.4

A

-10 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 6)

NEW PRODUCT

Thermal Resistance, Junction to Ambient @TA = 25°C R
Operating and Storage Temperature Range

P

T

J, TSTG

θJA

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20

 
 

 

-1.0 μA

±100 nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th

-0.5 - -0.9 V
45 60

Static Drain-Source On-Resistance

R

DS (ON)



60 90
87 113

Forward Transfer Admittance

|Y

|

fs



9



DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C



iss

C



oss

C



rss

R



G

727

69
64
23







SWITCHING CHARACTERISTICS

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.

7. Repetitive rating, pulse width limited by junction temperature.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

DMP2305U

Document number: DS31737 Rev. 6 - 2

Q



Q



s

Q



d

t



D(on

t



t



D(off

t



f

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www.diodes.com

7.6

1.4

1.2

14.0

13.0

53.8

23.2









1.4 W
90 °C/W

-55 to +150 °C

V

VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = 8V, VDS = 0V

VDS = VGS, ID = -250μA

= -4.5V, ID = -4.2A

V

mΩ

pF
pF
pF

GS

V

GS

V

GS

S

VDS = -5V, ID = -4A

V

DS

f = 1.0MHz

Ω

VGS = 0V, V

= -2.5V, ID = -3.4A
= -1.8V, ID = -2.0A

= -20V, VGS = 0V

= 0V, f = 1.0MHz

DS

nC
nC

= -4.5V, V

V

GS

= -4V, ID = -3.5A

DS

nC
ns
ns

V

ns

= -4V, V

DS

= 4Ω, RG = 6Ω, ID = -1A

R

L

= -4.5V,

GS

ns

October 2013

© Diodes Incorporated