Diodes DMP22D6UT User Manual

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P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• ESD Protected Gate

• "Green" Device (Note 4)

• Qualified to AEC-Q101 standards for High Reliability

NEW PRODUCT

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 1) Steady
State

Pulsed Drain Current (Note 3)

ESD PROTECTED

= 25°C unless otherwise specified

A

TOP VIEW

Characteristic Symbol Value Units

= 25°C

T

A

= 85°C

T

A

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.002 grams (approximate)

SOT-523

Gate

Gate
Diode

E

V

DSS

V

GSS

I

D

I

DM

Drai

Protection

uivalent Circuit

DMP22D6UT

D

Source

G

TOP VIEW

-20 V
±8 V

-430

-310

-750 mA

S

mA

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Electrical Characteristics @T

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 1. Device mounted on FR-4 PCB.

4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%

5. Short duration pulse test used to minimize self-heating effect.

DMP22D6UT

Document number: DS31585 Rev. 2 - 2

P

D

R

JA

T

J, TSTG

= 25°C unless otherwise specified

⎯

-20

⎯ ⎯

-0.5

200

⎯ ⎯
⎯ ⎯
⎯ ⎯

BV

DSS

I

⎯ ⎯

DSS

I

GSS

V

GS(th

R

DS (ON)

|

|Y

fs

V

⎯ ⎯

SD

C

iss

C

oss

C

rss

1 of 4

www.diodes.com

⎯ ⎯

-1.0

±1.0 μA

⎯

-1.0 V

0.7

1.1

1.7
⎯ ⎯

-1.4 V V

175 pF

150 mW
833 °C/W

-55 to +150 °C

V

V

= 0V, ID = -250mA

μA

GS

= -20V, V

V

DS

V

= ±4.5V, VDS = 0V

GS

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -430mA

1.1

1.6

Ω

2.6
ms

30 pF
20 pF

GS

VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
V

=10V, ID = 0.2A

DS

= 0V, IS = -115mA

GS

= -16V, V

V

DS

f = 1.0MHz

= 0V

GS

= 0V

GS

November 2008

© Diodes Incorporated

R

CUR

R

T

R

CUR

RENT

GATE THRESH

O

OLTAG

NEW PRODUCT

DMP22D6UT

(A)

(A)

EN

AIN

-I , D

D

0

0

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

AIN

D

-I , D

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Character istics

E (V)

LD V

GS(th)

-V ,

T , AMBIENT TEMPERATURE (°C)

A

Fig. 3 Gate Threshold Voltage vs. Ambient Temperature

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 4 Static Drain-Source On-Resista nce vs. Drai n C ur r ent

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 5 Static Drain-Source On-Resistance

vs. Drain C ur r ent

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 6 Static Drain-Source On-Resistance vs.

Drain-Source Current

10

DMP22D6UT

Document number: DS31585 Rev. 2 - 2

2 of 4

www.diodes.com

November 2008

© Diodes Incorporated