θ
)
q
n
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P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 4)
• Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady
State
Pulsed Drain Current (Note 3)
ESD PROTECTED
= 25°C unless otherwise specified
A
TOP VIEW
Characteristic Symbol Value Units
= 25°C
T
A
= 85°C
T
A
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.002 grams (approximate)
SOT-523
Gate
Gate
Diode
E
V
DSS
V
GSS
I
D
I
DM
Drai
Protection
uivalent Circuit
DMP22D6UT
D
Source
G
TOP VIEW
-20 V
±8 V
-430
-310
-750 mA
S
mA
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 1. Device mounted on FR-4 PCB.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%
5. Short duration pulse test used to minimize self-heating effect.
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
P
D
R
JA
T
J, TSTG
= 25°C unless otherwise specified
⎯
-20
⎯ ⎯
-0.5
200
⎯ ⎯
⎯ ⎯
⎯ ⎯
BV
DSS
I
⎯ ⎯
DSS
I
GSS
V
GS(th
R
DS (ON)
|
|Y
fs
V
⎯ ⎯
SD
C
iss
C
oss
C
rss
1 of 4
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⎯ ⎯
-1.0
±1.0 μA
⎯
-1.0 V
0.7
1.1
1.7
⎯ ⎯
-1.4 V V
175 pF
150 mW
833 °C/W
-55 to +150 °C
V
V
= 0V, ID = -250mA
μA
GS
= -20V, V
V
DS
V
= ±4.5V, VDS = 0V
GS
VDS = VGS, ID = -250μA
V
= -4.5V, ID = -430mA
1.1
1.6
Ω
2.6
ms
30 pF
20 pF
GS
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
V
=10V, ID = 0.2A
DS
= 0V, IS = -115mA
GS
= -16V, V
V
DS
f = 1.0MHz
= 0V
GS
= 0V
GS
November 2008
© Diodes Incorporated
R
CUR
R
T
R
CUR
RENT
GATE THRESH
O
OLTAG
NEW PRODUCT
DMP22D6UT
(A)
(A)
EN
AIN
-I , D
D
0
0
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
AIN
D
-I , D
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Character istics
E (V)
LD V
GS(th)
-V ,
T , AMBIENT TEMPERATURE (°C)
A
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
-I , DRAIN-SOURCE CURRENT (A)
D
Fig. 4 Static Drain-Source On-Resista nce vs. Drai n C ur r ent
-I , DRAIN-SOURCE CURRENT (A)
D
Fig. 5 Static Drain-Source On-Resistance
vs. Drain C ur r ent
-I , DRAIN-SOURCE CURRENT (A)
D
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current
10
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
2 of 4
www.diodes.com
November 2008
© Diodes Incorporated
NEW PRODUCT
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambien t T empe rature
150
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Rever se Drain C ur r ent vs. Sour ce-Drai n Vol t age
DS
DMP22D6UT
120
90
60
30
0
-I , DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
D
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Capacitance
Ordering Information (Note 6)
Part Number Case Packaging
DMP22D6UT-7 SOT-523 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
PBA
YM
PBA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
3 of 4
www.diodes.com
November 2008
© Diodes Incorporated
DMP22D6UT
Package Outline Dimensions
NEW PRODUCT
K
J
A
Dim Min Max Typ
C
B
G
H
N
D
L
M
SOT-523
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
⎯ ⎯
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
0° 8°
α
All Dimensions in mm
0.50
⎯
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Y
Dimensions Value (in mm)
Z
X
E
C
IMPORTANT NOTICE
LIFE SUPPORT
Z 1.8
X 0.4
Y 0.51
C 1.3
E 0.7
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
4 of 4
www.diodes.com
November 2008
© Diodes Incorporated
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