Diodes DMP22D4UFA User Manual

NEW PRODUCT

Product Summary

I

max

D

V

R

(BR)DSS

1.9 @ V

-20V

2.4 @ VGS = -2.5V

3.4 @ VGS = -1.8V
5 @ VGS = -1.5V

DS(ON)

max

= -4.5V

GS

TA = 25°C

-330mA

-300mA

-250mA

-200mA

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• General Purpose Interfacing Switch

• Power Management Functions

• Analog Switch

ESD PROTECTED

Bottom View

DMP22D4UFA

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Package Profile, 0.4mm Maximum Package height

• 0.48mm

• Low On-Resistance

• Very low Gate Threshold Voltage, 1.0V max

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

2

package footprint, 16 times smaller than SOT23

Mechanical Data

• Case: X2-DFN0806-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drain

D

S
G

Top View

Package Pin Configuration

Gate

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMP22D4UFA-7B DFN0806H4-3 10K/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMP22D4UFA

Document number: DS35766 Rev. 2 - 2

DMP22D4UFA-7B

PW

Top View

Bar Denotes Gate

and Source Side

www.diodes.com

PW = Product Type Marking Code

1 of 6

© Diodes Incorporated

May 2012

)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -1.8V

Steady

State

t<10s

Steady

State

t<10s

Pulsed Drain Current (Note 6)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) Steady state
Thermal Resistance, Junction to Ambient (Note 5)

Steady state

t<10s 220 °C/W

Operating and Storage Temperature Range

DMP22D4UFA

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

P

D

R

JA

θ

T

J, TSTG

-20 V
±8 V

-330

-260

-400

-310

-250

-200

-310

-240

mA

mA

mA

mA

-800 mA

400 mW
310 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = 25°C I
Gate-Source Leakage

BV

I

DSS

DSS

GSS

-20 - - V

- - 100

- - 50

- - ±100 nA

VGS = 0V, ID = -250A
V

= -16V, VGS = 0V

nA

DS

= -5V, VGS = 0V

V

DS

VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.4 - -1.0 V

- 1.2 1.9

- 1.5 2.4

- 2.1 3.4

- 2.5 5

- 4.0 -

100 450 - mS

|

- -0.6 -1.0 V

VDS = VGS, ID = -250A

V

= -4.5V, ID = -100mA

GS

V

= -2.5V, ID = -50mA

Ω

GS

V

= -1.8V, ID = -20mA

GS

V

= -1.5V, ID = -10mA

GS

V

= -1.2V, ID = -1mA

GS

VDS = -5V, ID = -125mA

VGS = 0V, IS = -10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C
C

t

t

C

oss
rss

R

Q
Q
Q

D(on

t

D(off

t

iss

G

s
d

f

- 28.7 - pF

- 4.2 - pF

- 2.9 - pF

- 0.4 -

- 0.4 - nC

- 0.08 - nC

- 0.06 - nC

- 5.8 - ns

- 5.7 - ns

- 31.1 - ns

- 16.4 - ns

V

= -15V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz
V

= -4.5V, VDS =- 10V,

GS

I

= -250mA

D

V

= -15V, VGS = -4.5V,

DD

= 2, ID = -200mA

R

G

DMP22D4UFA

Document number: DS35766 Rev. 2 - 2

2 of 6

www.diodes.com

May 2012

© Diodes Incorporated