Diodes DMP2240UW User Manual

θ

p

Features

• P-Channel MOSFET

• Low On-Resistance

• 150 mΩ @ V

• 200 mΩ @ V

• 240 mΩ @ V

• Very Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

= -4.5V

GS

= -2.5V

GS

= -1.8V

GS

GS(th)

SOT-323

Top View

≤ 1V

DMP2240UW

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram Below

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.006 grams (approximate)

Drain

D

Gate

Source

Internal Schematic

GS

To

View

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 1)
Pulsed Drain Current

= 25°C

T

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

DM

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 substrate PC board, 2oz. Copper, with minimum recommended pad layout.

2. No purposefully added lead.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

P

R

T

J, TSTG

D
JA

-20 V

±12 V

-1.5

-1.0

A

-5 A

250 mW
500 °C/W

-55 to +150 °C

DMP2240UW

Document number: DS31372 Rev. 3 - 2

1 of 5

www.diodes.com

May 2010

© Diodes Incorporated

)

)

r

)

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C

T

= 125°C

J

Gate-Source Leakage

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage (Note 4)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Short duration pulse test used to minimize self-heating effect.

BV

DSS

⎯ ⎯

I

DSS

I

GSS

V

GS(th

R

⎯

DS (ON)

g

⎯

FS

V

⎯ ⎯

SD

C

⎯

iss

C

⎯

oss

C

⎯

rss

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

-20

⎯ ⎯

-0.45

⎯ ⎯

⎯

92
134
180

3.1

320

80

60

12.5

10.3

46.5

22.2

V

-1.0

-5.0

±100

μA

nA

-1.0 V
150

200

mΩ

240

⎯

S

-0.9 V

⎯
⎯
⎯

⎯

⎯

⎯

⎯

pF
pF
pF

ns
ns
ns
ns

DMP2240UW

VGS = 0V, ID = -250μA

= -20V, VGS = 0V

V

DS

V

= ±12V, VDS = 0V

GS

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -2.0A

GS

VGS = -2.5V, ID = -1.5A
VGS = -1.8V, ID = -0.5A
VDS = -10V, ID = -810mA
VGS = 0V, IS = -0.5A

= -16V, VGS = 0V

V

DS

f = 1.0MHz

V

= -10V, VGS = -4.5V,

DS

= 10Ω, RG = 1.0Ω

R

L

V = -3.0V

GS

V = -2.0V

GS

V = -1.8V

V = -1.2V

GS

GS

V = -1.6V

GS

V = -1.4V

GS

V = -1.0V

GS

V = -10V

DS

T = 125°C

A

T = 25°C

A

T = -55°C

A

DMP2240UW

Document number: DS31372 Rev. 3 - 2

2 of 5

www.diodes.com

May 2010

© Diodes Incorporated