Diodes DMP2240UDM User Manual

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DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Dual P-Channel MOSFET

• Low On-Resistance

• 150 mΩ @ V

• 200 mΩ @ V

• 240 mΩ @ V

• Very Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

= -4.5V

GS

= -2.5V

GS

= -1.8V

GS

GS(th)

≤ 1V

G1

1

S2

2

G2

3

TOP VIEW

D1

DMP2240UDM

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.015 grams (approximate)

SOT-26

S

D

1

6

5

S1

4

D2

G

1

TOP VIEW

Internal Schematic

D

1

2

G

S

2

2

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 1)
Pulsed Drain Current

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

= 25°C

T

A

T

= 70°C

A

V
V

I

P

R

T

J, TSTG

DSS
GSS

I

D

DM

D
JA

-20 V

±12 V

-2.0

-1.5

A

-7 A

600 mW
208 °C/W

-65 to +150 °C

DMP2240UDM

Document number: DS31197 Rev. 5 - 2

1 of 5

www.diodes.com

April 2010

© Diodes Incorporated

)

)

r

)

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C

T

= 125°C

J

Gate-Source Leakage

BV

DSS

I

⎯ ⎯

DSS

I

⎯ ⎯

GSS

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage (Note 4)

V

GS(th

R

DS (ON)

g

⎯

FS

V

⎯ ⎯

SD

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Short duration pulse test used to minimize self-heating effect.

C
C

t

t

C

oss
rss

D(on

t

D(off

t

iss

f

-20

-0.45

⎯

⎯
⎯
⎯
⎯
⎯
⎯
⎯

⎯ ⎯

⎯

92
134
180

3.1

320

80

60

11.51

12.09

55.34

27.54

V

-1.0

-5.0

±100

μA

nA

-1.0 V
150

200

mΩ

240

⎯

S

-0.9 V

⎯
⎯
⎯
⎯
⎯
⎯
⎯

pF
pF
pF

ns
ns
ns
ns

DMP2240UDM

VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
V

= ±12V, VDS = 0V

GS

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -2.0A

GS

VGS = -2.5V, ID = -1.5A
VGS = -1.8V, ID = -0.5A
VDS = -10V, ID = -810mA
VGS = 0V, IS = -0.5A

V

= -16V, VGS = 0V

DS

f = 1.0MHz

V

= -10V, VGS = -4.5V

DS

= 6Ω, RL = 10Ω

R

G

V = -3.0V

GS

V = -2.0V

GS

V = -1.8V

V = -1.2V

GS

GS

V = -1.6V

GS

V = -1.4V

GS

V = -1.0V

GS

V = -10V

DS

T = 125°C

A

T = 25°C

A

T = -55°C

A

DMP2240UDM

Document number: DS31197 Rev. 5 - 2

2 of 5

www.diodes.com

April 2010

© Diodes Incorporated