Diodes DMP2225L User Manual

Product Summary

I

V

R

(BR)DSS

-20V

110mΩ @ V
225mΩ @ VGS = -2.5V

Package

DS(ON)

= -4.5V

GS

SOT23

D

TA = +25°C

-2.6A

-2.0A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• General Purpose Interfacing Switch

• Power Management Functions

SOT23

G

Top View Top View

DMP2225L

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance:

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

Drain

D

Gate

S

Equivalent Circuit

Source

Ordering Information

Part Number Qualification Case Packaging

DMP2225L-7 Commercial SOT-23 3000/Tape & Reel

DMP2225LQ-7 Automotive SOT-23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2225L

Document number: DS31461 Rev. 5 - 2

2P2

2P2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)

YM

M = Month (ex: 9 = September)

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www.diodes.com

January 2013

© Diodes Incorporated

A

)

g

g

g

g

DMP2225L

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage V
Gate-Source Voltage V

Continuous Drain Current (Note 5)

Stead

State

= +25°C

T

A

= +70°C

T

-20 V

DSS

±12 V

GSS

I

D

-2.6

-2

A

Pulsed Drain Current (Note 6) IDM 8 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

P

T

J, TSTG

θJA

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

On-State Drain Current

Gate-Source Leakage

BV

I

I

D(ON)

I

DSS

DSS

GSS

-20 — — V
— — -800 nA

-6 — —

-3 — —
— — ±80 nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

-0.45 — -1.25 V

—

80

165

— 4 — S
— — -1.26 V

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

DMP2225L

Document number: DS31461 Rev. 5 - 2

— 250 — pF
— 88 — pF
— 58 — pF
— 12 16 Ω
— 4.3 5.3
— 0.9 —
— 2.1 —

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www.diodes.com

1.08 W
115 °C/W

-55 to +150 °C

V

= 0V, ID = -250µA

GS

VDS = -20V, VGS = 0V
V

≤ -5V, VGS = -4.5V

DS

A

V

≤ -5V, VGS = -2.5V

DS

VGS = ±12V, VDS = 0V

V

= VGS, ID = -250µA

DS

= -4.5V, ID = -2.6A

110
225

mΩ

V

GS

V

= -2.5V, ID = -2.0A

GS

VDS = -5V, ID = -2.6A
V

= 0V, IS = -2.6A

GS

V

= -10V, VGS = 0V

DS

f = 1.0MHz

VGS = 0V, VDS = 0V, f = 1MHz

= -4.5V, VDS = -10V,

V

GS

nC

I

= -2.7A

D

January 2013

© Diodes Incorporated