Diodes DMP2225L User Manual

Product Summary

I

V

R

(BR)DSS

-20V

110mΩ @ V
225mΩ @ VGS = -2.5V

Package

DS(ON)

= -4.5V

GS

SOT23

D

TA = +25°C

-2.6A

-2.0A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• General Purpose Interfacing Switch

• Power Management Functions

SOT23

G

Top View Top View

DMP2225L

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance:

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

Drain

D

Gate

S

Equivalent Circuit

Source

Ordering Information

Part Number Qualification Case Packaging

DMP2225L-7 Commercial SOT-23 3000/Tape & Reel

DMP2225LQ-7 Automotive SOT-23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2225L

Document number: DS31461 Rev. 5 - 2

2P2

2P2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)

YM

M = Month (ex: 9 = September)

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January 2013

© Diodes Incorporated

A

)

g

g

g

g

DMP2225L

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage V
Gate-Source Voltage V

Continuous Drain Current (Note 5)

Stead

State

= +25°C

T

A

= +70°C

T

-20 V

DSS

±12 V

GSS

I

D

-2.6

-2

A

Pulsed Drain Current (Note 6) IDM 8 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

P

T

J, TSTG

θJA

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

On-State Drain Current

Gate-Source Leakage

BV

I

I

D(ON)

I

DSS

DSS

GSS

-20 — — V
— — -800 nA

-6 — —

-3 — —
— — ±80 nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

-0.45 — -1.25 V

—

80

165

— 4 — S
— — -1.26 V

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

DMP2225L

Document number: DS31461 Rev. 5 - 2

— 250 — pF
— 88 — pF
— 58 — pF
— 12 16 Ω
— 4.3 5.3
— 0.9 —
— 2.1 —

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1.08 W
115 °C/W

-55 to +150 °C

V

= 0V, ID = -250µA

GS

VDS = -20V, VGS = 0V
V

≤ -5V, VGS = -4.5V

DS

A

V

≤ -5V, VGS = -2.5V

DS

VGS = ±12V, VDS = 0V

V

= VGS, ID = -250µA

DS

= -4.5V, ID = -2.6A

110
225

mΩ

V

GS

V

= -2.5V, ID = -2.0A

GS

VDS = -5V, ID = -2.6A
V

= 0V, IS = -2.6A

GS

V

= -10V, VGS = 0V

DS

f = 1.0MHz

VGS = 0V, VDS = 0V, f = 1MHz

= -4.5V, VDS = -10V,

V

GS

nC

I

= -2.7A

D

January 2013

© Diodes Incorporated

R

CUR

RENT

R

TATIC DR

OUR

C

C, TOT

CAPACITANC

F

(A)

10

V = -10V

GS

V = -5.0V

GS

V = -4.0V

8

GS

6

V = -5V

DS

5

Pulsed

4

DMP2225L

6

3

2

D

-I , DRAIN CURRENT (A)

1

0

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0 0.5 1 1.5 2 2.5 3

-V , GATE SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

1,000

f = 1 MHz
V = 0V

)

GS

4

AIN

D

-I , D

2

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

1

E

V = -2.5V

GS

V = -2.0V

GS

V = -1.5V

GS

V = -2.5V

Ω

GS

E (p

C

iss

AIN-S

V = -4.5V

GS

V = -10V

GS

, S

0.1

ON-RESISTANCE ( )

DS(on)

0.01

0.01 0.1 1 10

-I , DRAIN CURRENT (A)

Figure 3 O

D

n-Resistance vs. Drain Current and Gate Voltage

1.2

1.1

1

-I = 250 ADµ

0.9

0.8

100

C

AL

T

10

024 68101214161820

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 4 Typical Total Capacitance

1.5

1.4

V = -4.5V

GS

I = -3.0A

D

1.3

V = -10V

GS

1.2

1.1

I = -5.0A

D

V = -2.5V

GS

I = -1.0A

D

1

oss

C

rss

0.9

0.7

0.8

DS(ON)

R , STATIC DRAIN-SOURCE

0.6

GS(TH)

-V , GATE THRESHOLD VOLTAGE (V)

0.5

-50-25 0 25 50 75100125150

Figure 5 Gate Threshold Voltage vs. Ambient Temperature

DMP2225L

Document number: DS31461 Rev. 5 - 2

T , AMBIENT TEMPERATURE (°C)

A

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ON-RESISTANCE (NORMALIZED)

0.7

0.6

-55 25 85 125 150
T , AMBIENT TEMPERATURE (C)

A

Figure 6 Normalized Static Drain-Source On-Resistance

vs. Ambient Temperature

January 2013

© Diodes Incorporated

OUR

CE CUR

RENT

GAT

OUR

C

O

T

G

RAIN CUR

REN

T

T

R

T T

HER

R

TANC

5

10

DMP2225L

4.5

8

4

(A)

3.5

3

E (V)
A

L

E V

V = -10V

DS

I = -3A

D

6

2.5

4

2

S

1.5

-I , S

1

0.5

0.5 0.6 0.7 0.8 0.9 1

-V , SOURCE DRAIN VOLTAGE (V)

Figure 7 Reverse Drain Current vs. Source-Drain Voltage

SD

100

R

DS(on)

Limited

E-S

2

GS

-V ,

0

02468101214

Q , TOTAL GATE CHARGE (nC)

g

Figure 8 Gate-Charge Characteristics

10

(A)

1

D

I, D

0.1

0.01

0.1 1 10 100

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

T = 150°C

J(max)

T = 25°C

A

Single Pulse

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Safe Operation Area

W

P = 10sWµ

1

E

D = 0.7

D = 0.5

D = 0.3

ESIS

0.1

MAL

ANSIEN

0.01

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = 0.9

R (t) = r(t) *

θ

JA

R = 163°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

1

Figure 10 Transient Thermal Response

DMP2225L

Document number: DS31461 Rev. 5 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

K

J

H

F

D

G

C

B

K1

L

M

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMP2225L

Document number: DS31461 Rev. 5 - 2

Y

Dimensions Value (in mm)

Z

X

E

C

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Dim Min Max Typ

A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915

F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90

J 0.013 0.10 0.05
K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55
M 0.085 0.18 0.11

α

Z 2.9
X 0.8
Y 0.9
C
E

SOT23

0° 8° -

All Dimensions in mm

2.0

1.35

DMP2225L

January 2013

© Diodes Incorporated

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

DMP2225L

DMP2225L

Document number: DS31461 Rev. 5 - 2

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© Diodes Incorporated