Diodes DMP2215L User Manual

θ

Please click here to visit our online spice models database.

Features

• Low On-Resistance:
R
R

< 100mΩ @ V

DS(ON)

< 215mΩ @ V

DS(ON)

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

= -4.5V, ID = -2.7A

GS

= -2.5V, ID = -2.0A

GS

TOP VIEW

DMP2215L

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.008 grams (approximate)

SOT-23

Drain

D

Gate

Source

EQUIVALENT CIRCUIT

G

TOP VIEW

S

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady

State

Pulsed Drain Current (Note 3)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB. t ≤5 sec.

DMP2215L

Document number: DS31125 Rev. 7 - 2

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

T

= 25°C

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

DM

P

R

T

J, TSTG

1 of 5

www.diodes.com

D
JA

-20 V

±12 V

-2.7

-2

A

8 A

1.08 W
115 °C/W

-55 to +150 °C

July 2009

© Diodes Incorporated

)

g

g

g

g

R

CUR

RENT

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

On-State Drain Current
Gate-Source Leakage

BV

I

I

D(ON)

I

DSS

DSS

GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage (Note 5)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

Notes: 5. Short duration pulse test used to minimize self-heating effect.

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

-20
⎯ ⎯

-6

-3
⎯ ⎯

-0.45

⎯

|

⎯
⎯ ⎯

⎯

⎯

⎯
⎯
⎯

⎯

⎯

⎯ ⎯

-800 nA

⎯ ⎯
⎯ ⎯

±80

⎯

80

165

4

-1.25 V
100

215

⎯

-1.26 V

250

88
58

⎯
⎯
⎯

12 16

4.3 5.3

0.9

2.1

⎯
⎯

DMP2215L

V

V

= 0V, ID = -250μA

GS

VDS = -20V, VGS = 0V
V

≤ -5V, VGS = -4.5V

DS

A

nA

mΩ

S

pF
pF
pF

Ω VGS = 0V, VDS = 0V, f = 1MHz

nC

≤ -5V, VGS = -2.5V

V

DS

V

= ±12V, VDS = 0V

GS

V

= VGS, ID = -250μA

DS

V

= -4.5V, ID = -2.7A

GS

V

= -2.5V, ID = -2.0A

GS

VDS = -5V, ID = -2.7A
V

= 0V, IS = -2.7A

GS

= -10V, VGS = 0V

V

DS

f = 1.0MHz

= -4.5V, VDS = -10V,

V

GS

= -2.7A

I

D

V = -5V

DS

Pulsed

(A)

AIN

D

-I , D

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

DMP2215L

Document number: DS31125 Rev. 7 - 2

2 of 5

www.diodes.com

July 2009

© Diodes Incorporated