Dual P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
V
R
(BR)DSS
200mΩ @V
-20V
290mΩ @V
390mΩ @V
650mΩ @V
max I
DS(on)
= -4.5V
GS
= -2.5V
GS
= -1.8V
GS
= -1.5V
GS
Description
This device provides a high performance, low R
MOSFET in the thermally and spatially efficient DFN1616-6 package.
The low R
making it ideal for use in the following applications:
of this MOSFET ensures conduction losses are kept
DS(ON)
DS(ON)
Applications
• Battery disconnect switch
• Load switch for power management functions
NEW PRODUCT
ADVANCE INFORMATION
ESD PROTECTED
Pin1
Bottom View
max
D
-1.7 A
-1.3 A
-1.1 A
-0.5 A
P-Channel
Features
• Typical off board profile of 0.5mm - ideally suited for thin
applications
• Low R
• PCB footprint of 2.56mm
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
• ESD Protected Gate
– minimizes conduction losses
DS(ON)
2
Mechanical Data
• Case: U-DFN1616-6 Type F
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Lead Free Plating (NiPdAu Finish over Copper leadframe).
• Terminals: Solderable per MIL-STD-202, Method 208
• Weight: 0.04 grams (approximate)
Device Symbol Pin Configuration
Bottom View
Ordering Information (Note 4)
DMP2200UFCL
e4
Product Reel size (inches) Tape width (mm) Quantity per reel
DMP2200UFCL-7 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2014 2015 2016 2017 2018 2019 2020
Code B C D E F G H
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
P20
YM
DMP2200UFCL
Document number: DS36619 Rev. 2 - 2
P20 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B= 2014)
M = Month (ex: 9 = September)
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June 2014
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) @TA = +25°C
@T
= +85°C
A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6) 1.58 W
(Note 5)
(Note 6) 80
Operating and Storage Temperature Range
NEW PRODUCT
Electrical Characteristics (@T
ADVANCE INFORMATION
Characteristic Symbol Min Typ Max Unit Test Condition
= +25°C, unless otherwise specified.)
A
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
DSS
-20
⎯ ⎯
⎯ ⎯
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage (Note 7)
V
GS(th)
R
DS (ON)
V
SD
-0.4
⎯
⎯ ⎯
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
— 184 — pF
—
—
— 2.2 — nC
—
—
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
t
D(ON)
t
D(OFF)
t
t
r
f
— 9.8 — ns
—
—
— 41 — ns
DMP2200UFCL
Document number: DS36619 Rev. 2 - 2
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www.diodes.com
V
V
P
R
T
J, TSTG
DSS
GSS
I
D
D
JA
θ
⎯ ⎯
⎯
153
220
260
360
25.8
18.6
0.4
0.5
23
87
DMP2200UFCL
-20 V
±8 V
-1.7
-1.2
0.66 W
193
-55 to +150 °C
V
VGS = 0V, ID = 250µA
-1 µA
±10
-1.2 V
200
290
390
650
-1.2 V
—
—
—
—
—
—
µA
mΩ
pF
pF
nC
nC
ns
ns
V
= -20V, VGS = 0V
DS
V
= ±8V, VDS = 0V
GS
V
= VGS, ID = -250µA
DS
= -4.5V, ID = -2.0A
V
GS
= -2.5V, ID = -1.2A
V
GS
= -1.8V, ID = -0.24A
V
GS
= -1.5V, ID = -0.18A
V
GS
V
= 0V, IS = -0.6A
GS
V
= -10V, VGS = 0V
DS
f
= 1.0MHz
V
= -4.5V, VDS = -10V,
GS
= -1.7A
I
D
= -10V, ID = -1.5A,
V
DD
V
GS
A
°C/W
= -4.5V, R
GEN
June 2014
© Diodes Incorporated
= 1Ω