Diodes DMP2200UFCL User Manual

Dual P-CHANNEL ENHANCEMENT MODE MOSFET

Summary

V

R

(BR)DSS

200mΩ @V

-20V

290mΩ @V

390mΩ @V

650mΩ @V

max I

DS(on)

= -4.5V

GS

= -2.5V

GS

= -1.8V

GS

= -1.5V

GS

Description

This device provides a high performance, low R

MOSFET in the thermally and spatially efficient DFN1616-6 package.

The low R

making it ideal for use in the following applications:

of this MOSFET ensures conduction losses are kept

DS(ON)

DS(ON)

Applications

• Battery disconnect switch

• Load switch for power management functions

NEW PRODUCT

ADVANCE INFORMATION

ESD PROTECTED

Pin1

Bottom View

max

D

-1.7 A

-1.3 A

-1.1 A

-0.5 A

P-Channel

Features

• Typical off board profile of 0.5mm - ideally suited for thin

applications

• Low R

• PCB footprint of 2.56mm

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

• ESD Protected Gate

– minimizes conduction losses

DS(ON)

2

Mechanical Data

• Case: U-DFN1616-6 Type F

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Lead Free Plating (NiPdAu Finish over Copper leadframe).

• Terminals: Solderable per MIL-STD-202, Method 208

• Weight: 0.04 grams (approximate)

Device Symbol Pin Configuration

Bottom View

Ordering Information (Note 4)

DMP2200UFCL

e4

Product Reel size (inches) Tape width (mm) Quantity per reel

DMP2200UFCL-7 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2014 2015 2016 2017 2018 2019 2020

Code B C D E F G H

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

P20

YM

DMP2200UFCL

Document number: DS36619 Rev. 2 - 2

P20 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B= 2014)
M = Month (ex: 9 = September)

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) @TA = +25°C
@T

= +85°C

A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

(Note 5)

(Note 6) 1.58 W

(Note 5)

(Note 6) 80

Operating and Storage Temperature Range

NEW PRODUCT

Electrical Characteristics (@T

ADVANCE INFORMATION

Characteristic Symbol Min Typ Max Unit Test Condition

= +25°C, unless otherwise specified.)

A

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

-20

⎯ ⎯

⎯ ⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage (Note 7)

V

GS(th)

R

DS (ON)

V

SD

-0.4

⎯

⎯ ⎯

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

— 184 — pF

—

—

— 2.2 — nC

—

—

SWITCHING CHARACTERISTICS (Note 8)

Turn-On Delay Time

Turn-Off Delay Time

Turn-On Rise Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

t

D(ON)

t

D(OFF)

t

t

r

f

— 9.8 — ns

—

—

— 41 — ns

DMP2200UFCL

Document number: DS36619 Rev. 2 - 2

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V

V

P

R

T

J, TSTG

DSS

GSS

I

D

D

JA

θ

⎯ ⎯

⎯

153
220

260
360

25.8

18.6

0.4

0.5

23

87

DMP2200UFCL

-20 V

±8 V

-1.7

-1.2

0.66 W

193

-55 to +150 °C

V

VGS = 0V, ID = 250µA

-1 µA

±10

-1.2 V

200
290

390
650

-1.2 V

—

—

—

—

—

—

µA

mΩ

pF

pF

nC

nC

ns

ns

V

= -20V, VGS = 0V

DS

V

= ±8V, VDS = 0V

GS

V

= VGS, ID = -250µA

DS

= -4.5V, ID = -2.0A

V

GS

= -2.5V, ID = -1.2A

V

GS

= -1.8V, ID = -0.24A

V

GS

= -1.5V, ID = -0.18A

V

GS

V

= 0V, IS = -0.6A

GS

V

= -10V, VGS = 0V

DS

f

= 1.0MHz

V

= -4.5V, VDS = -10V,

GS

= -1.7A

I

D

= -10V, ID = -1.5A,

V

DD

V

GS

A

°C/W

= -4.5V, R

GEN

June 2014

© Diodes Incorporated

= 1Ω

R

CUR

R

T

R

CUR

R

T

R

R

OUR

ON-R

R

R

OUR

CE ON-R

TANC

R

R

O

R

ON-R

R

R

OUR

C

ADVANCE INFORMATION

NEW PRODUCT

DMP2200UFCL

10

8

(A)

EN

6

4

AIN

D

-I , D
2

0

00.511.522.53

V= -8.0V

GS

V= -4.5V

GS

V= -1.5V

GS

-V , DRAIN -SOURCE VOLTAGE (V)

DS

V= -4.0V

GS

V= -3.0V

GS

V= -2.5V

GS

V= -2.0V

GS

V= -1.2V

GS

Figure 1 Typical Output Characteristics

0.5

Ω

V = -1.8V

GS

0.4

ESISTANCE ( )

0.3

V = -2.5V

GS

10

V = -5.0V

DS

T = -55CA°

T = 25CA°

8

(A)

EN

AIN

-I , D

6

4

D

T = 85CA°

T = 125CA°

2

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

2

Ω

1.8

E ( )

1.6

I = -2.0A

1.4

ESIS

D

1.2

T = 150CA°

AIN-S

, D

0.8

0.6

0.4

1

I = -1.2A

D

CE

AIN-S

, D

0.2

0.1

V = -4.5V

GS

0.2

DS(ON)

0

0246810

-I , DRAIN SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.5

Ω

V= -4.5V

GS

0.4

T = 150 CA°

ESISTANCE ( )

CE

U

0.3

T = 85CA°

0.2

T = 125 CA°

T = 25CA°

T = -55CA°

AIN-S

0.1

, D

DS(ON)

0

0246 810

-I , DRAIN SOURCE CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

DS(ON)

E

AIN-S

, D

DS(ON)

ON-RESISTANCE (NORMALIZED)

I = -0.24A

D

0

012345678

-V , GATE-SOURCE CURRENT (V)

GS

Figure 4 Typical Transfer Characteristics

2

1.8

1.6

V = -4.5V

GS

I = -3A

D

1.4

1.2

V = -2.5V

1

GS

I = -1A

D

0.8

0.6

0.4

0.2

0

-50-25 0 25 50 75100125150
T , JUNCTION TEMPERATURE ( C)J°

Figure 6 On-Resistance Variation with Temperature

DMP2200UFCL

Document number: DS36619 Rev. 2 - 2

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R

R

OUR

CE O

R

TANC

GATE THRESH

O

OLTAG

OUR

CE CUR

RENT

C

UNC

TION CAPACITANC

F

GAT

OUR

C

OLT

G

R

N CUR

REN

T

ADVANCE INFORMATION

NEW PRODUCT

DMP2200UFCL

0.5

1

Ω

E ( )

E (V)

0.4

ESIS

N-

0.3

-2.

V=5V

GS

-1

I= A

D

0.2

V= -4.5V

GS

I= A

-3

AIN-S

0.1

, D

DS(on)

0

-50 -25 0 25 50 75 100 125 150

D

T , JUNCTION TEMPERATURE ( C)J°

Figure 7 On-Resistance Variation with Temperature

10

0.8

-I = 1mAD

0.6

LD V

-I = 250µA

D

0.4

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Figure 8 Gate Threshold Variation vs. Ambient Temperature

1000

f = 1MHz

)

8

(A)

6

4

S

-I , S

2

T= 150CA°

T= 125CA°

T= 85CA°

T= 25CA°

T= -55CA°

E (p

, J

100

10

T

C

iss

C

oss

C

rss

0

0 0.3 0.6 0.9 1.2 1.5

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

8

E (V)

6

A

E V

4

V = -10V

DS

I= -1.7A

D

E-S

2

GS

-V ,

0

0 0.5 1 1.5 2 2.5 3 3.5 4

Q , TOTAL GATE CHARGE (nC)

g

Figure 11 Gate-Charge Characteristics

1

02468101214161820

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

10

R

DS(on)

Limited

(A)

1

AI

0.1

D

-I , D

T = 150°C
T = 25°C
V = -4.5V
Single Pulse
DUT on 1 * MRP Board

0.01

0.1 1 10 100

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P= 10ms

W

P = 1ms

W

P = 100µs

J(max)

A

GS

-V , DRAIN-SOURCE VOLTAGE (V)

DS

W

Figure 12 SOA, Safe Operation Area

DMP2200UFCL

Document number: DS36619 Rev. 2 - 2

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T

RAN

N

T T

HER

R

T

N

C

NEW PRODUCT

ADVANCE INFORMATION

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

1

D = 0.9
D = 0.7

D = 0.5

E

D = 0.3

A

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

SIE

0.01

D = 0.01

D = 0.005

r(t),

Single Pulse

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t1, PULSE DURATION TIMES (sec)

Figure 13 Transient Thermal Resistance

A

E

Z︵4

A

Pin #1 ID

K

x

︶

1

D

D

1

R

0

.

1

0

0

e

b

A

D

2︵2

E

2︵2

L

3

Seating Plane

X

︶

x

︶

R (t) = r(t) * R

θθ

JA JA

R = 190°C/W

JA

θ

Duty Cycle, D = t1/ t2

U-DFN1616-6

Dim Min Max Typ

A1 0 0.05 0.02
A3 — — 0.127

D1 1.14 1.34 1.24
D2 0.38 0.58 0.48

E2 0.54 0.74 0.64

K — — 0.23

Type F

A 0.45 0.55 0.50

b 0.20 0.30 0.25

D 1.55 1.65 1.60

E 1.55 1.65 1.60

e — — 0.50

L 0.15 0.35 0.25
Z — — 0.175
All Dimensions in mm

DMP2200UFCL

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

Y

1

Y

X

2

G

1

Dimensions

C 0.500

X

1

G

Y

2

G 0.150

G1 0.180

X 0.320
X1 0.580
X2 1.320

Y 0.450
Y1 0.700

Y 1.900

Value

(in mm)

DMP2200UFCL

Document number: DS36619 Rev. 2 - 2

C

X

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DMP2200UFCL

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

NEW PRODUCT

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP2200UFCL

Document number: DS36619 Rev. 2 - 2

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