Diodes DMP21D5UFD User Manual

DMP21D5UFD

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

-20V

DS(ON) max

1.0Ω @ V

1.5Ω @ VGS = -2.5V

2.0Ω @ VGS = -1.8V

3.0Ω @ VGS = -1.5V

= -4.5V

GS

Package

X1-DFN1212-3

TA = +25°C

-600mA

-500mA

-400mA

-250mA

I

D

Features

• Low On-Resistance

• Very Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

GS(TH)

, 1.0V max

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• DC-DC Converters

• Power Management Functions

ADVANCE INFORMATION

ESD PROTECTED

Top View Bottom View

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: NiPdAu over Copper leadframe. Solderable per MIL-

STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.005 grams (approximate)

Gate

Gate
Protection
Diode

Equivalent Circuit

e4

Drain

Source

Pin-out Top view

Ordering Information (Note 4)

Part Number Case Packaging

DMP21D5UFD-7 X1-DFN1212-3 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

YM

KP2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

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Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

KP2

DMP21D5UFD

Document number: DS35931 Rev. 4 - 2

θ

θ

)

g

g

r

DMP21D5UFD

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -1.8V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Maximum Body Diode continuous Current

Steady

State

Steady

State

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

DM

I

S

-20 V
±8 V

-600

-500

-400

-300

mA

mA

-2 A

-800 mA

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)

Steady state
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)

Steady state
Operating and Storage Temperature Range

ADVANCE INFORMATION

P

R

P

R

T

J, TSTG

D
JA
D
JA

0.4 W

280 °C/W

0.8 W

140 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20 — — V

—

—
— — ±10.0 µA

-80

-100

VGS = 0V, ID = -1mA

nA

= -20V, VGS = 0V

V

DS

= -4.5V, VGS = 0V

V

DS

VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.5 — -1.0 V
— 0.7 1.0
— 0.9 1.5
— 1.2 2.0
— 1.5 3.0
— 5 —

|

— 0.7 — S
— -0.75 -1.2 V

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -100mA

GS

V

= -2.5V, ID = -80mA

GS

Ω

V

= -1.8V, ID = -40mA

GS

V

= -1.5V, ID = -30mA

GS

V

= -1.2V, ID = -1mA

GS

VDS = -3V, ID = -100mA

VGS = 0V, IS = -330mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C

rss

Total Gate Charge VGS = -4.5V Qg
Total Gate Charge VGS = -8V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMP21D5UFD

Document number: DS35931 Rev. 4 - 2

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

www.diodes.com

— 46.1 —
— 7.2 —
— 4.9 —
— 0.5 —
— 0.8 —
— 0.1 —
— 0.1 —
— 8.5 —
— 4.3 —
— 20.2 —
— 19.2 —

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pF

nC

ns

V

= -10V, VGS = 0V,

DS

f = 1.0MHz

= -10V, ID = -250mA

V

DS

= -3V, VGS = -2.5V,

V

DD

R

= 300Ω, RG = 25Ω,

L

= -100mA

I

D

August 2012

© Diodes Incorporated

R

CUR

R

T

RAIN CUR

REN

T

R,DR

OUR

ON-R

R

R

OUR

ON-R

R

RAIN-SOUR

CE O

N-R

T

N

C

1.0

0.8
(A)
EN

0.6

AIN

0.4

D

-I , D

0.2

0

012345

-V , DRAIN -SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Ch ar acteristics

2.0

Ω

1.8

ADVANCE INFORMATION

1.6

1.4

ESISTANCE( )

1.2

1.0

CE

0.8

0.6

AIN-S

V = -1.8V

GS

V = 2.5V

-

GS

V = 4.5V

-

GS

0.4

0.2

DS(ON)

0

0 0.2 0.4 0.6 0.8 1.0

-I , DRAIN SOURCE CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Current and G at e Vol t age

1.7

1.0

V= -5V

0.8

(A)

0.6

DS

T = A25 C

T = -55C

A

0.4

D

-I , D

0.2

0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V , GATE SOURCE VOLTAGE(V)

GS

Fig. 2 Typical Transfer Characteristics

1.6

Ω

1.4

1.2

ESISTANCE( )

1.0

CE

0.8

0.6

AIN-S

0.4

, D

0.2

DS(ON)

0

0 0.2 0.4 0.6 0.8 1

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Curr ent and Temperature

1.6

DMP21D5UFD

T = A85 C

°

°

°

T = 150°C

A

125°C

T =

A

T =

A

T = 2A5°C

T = A-55°C

T = A150 C

T = A125 C

85°C

°

°

Ω

E ( )

1.4

1.5

A

1.2

1.3

ESIS

1.0

1.1

0.9

DS(ON)

R , DRAIN-SOURCE

0.7

ON-RESISTANCE (NORMALIZED)

0.5

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 5 On-Resistance Variation with Temperature

DMP21D5UFD

Document number: DS35931 Rev. 4 - 2

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0.8

0.6

0.4

, D

0.2

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 6 On-Resistance vs.T emperature

August 2012

© Diodes Incorporated

GAT

T

H

R

H

O

OLT

G

C, J

UNC

TION CAPACITANC

pF)

GE CUR

REN

T

GAT

OUR

C

O

TAG

E (V)
A

LD V

ES

1.4

1.2

1.0

0.8

0.6

I= -1mA

I = -250µA

D

D

1.0

0.8

0.6

0.4

T= 25C

DMP21D5UFD

°

A

E

0.4

0.2

GS(th)

-V ,
0

-25 0 25 50 75 100 125 150

-50
T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

100

S

-I , SOURCE CURRENT (A)

0.2

0

0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

1,000

ADVANCE INFORMATION

E (

10

T

f = 1MHz

1

0 5 10 15 20

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Junction Capacitance

1

R

DS(ON)

Limited

DC

P = 10sW

0.1

0.01

D

-I , DRAIN CURRENT (A)

T = 150 C

J(MAX)

T= 25C

A

Single Pulse

0.001

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DMP21D5UFD

Document number: DS35931 Rev. 4 - 2

P=1s

W

P = 100ms

W

P = 10ms

W

P=1ms

W

°

°

DS

Fig. 11 SOA, Safe Operation Area

C

C

C

iss

oss

rss

P = 100µs

W

(nA)

100

DSS

-I , LEAKA

E (V)

L
E V

E-S

-V ,

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T = 1A50 C

°

T = 1A25 C

°

T = 8A5C

T = 2A5C

°

°

10

1

048121620

-V , DRAIN-SOURCE VOLTAGE(V)

DS

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

8

7

6

5

4

3

2

GS

1

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Q , TOTAL GATE CHARGE (nC)

g

Fig. 12 Gate-Charge Characteristics

August 2012

© Diodes Incorporated

DMP21D5UFD

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCE INFORMATION

A

A3

b1

(2x)

A1

D
e

E

L

b

X1-DFN1212-3

Dim Min Max Typ

A 0.47 0.53 0.50
A1 0 0.05 0.02
A3 - - 0.13

b 0.27 0.37 0.32
b1 0.17 0.27 0.22

D 1.15 1.25 1.20

E 1.15 1.25 1.20

e - - 0.80

L 0.25 0.35 0.30

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y2

DMP21D5UFD

Document number: DS35931 Rev. 4 - 2

X

Y1

(2x)

C

Y

X1

(2x)

Dimensions Value (in mm)

C 0.80
X 0.42

X1 0.32

Y 0.50
Y1 0.50
Y2 1.50

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

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noted herein may also be covered by one or more United States, international or foreign trademarks.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

IMPORTANT NOTICE

LIFE SUPPORT

DMP21D5UFD

DMP21D5UFD

Document number: DS35931 Rev. 4 - 2

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