Diodes DMP21D5UFB4 User Manual

DMP21D5UFB4

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

1.0Ω @ V

-20V

1.5Ω @ VGS = -2.5V

2.0Ω @ VGS = -1.8V

3.0Ω @ VGS = -1.5V

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• DC-DC Converters

• Power management functions

ADVANCE INFORMATION

ESD PROTECTED

) and yet maintain superior switching

DS(on)

DS(on) max

= -4.5V

GS

X2-DFN1006-3

I

D

TA = 25°C

-700mA

-600mA

-500mA

-380mA

Bottom View

Features and Benefits

• Low On-Resistance

• Very Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surfaced Mount Package

• Ultra-low package profile, 0.4mm maximum package height

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

GS(TH)

, 1.0V max

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drain

Gate

S

D

G

Top View

Internal Schematic

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMP21D5UFB4-7B X2-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMP21D5UFB4

Document number: DS35284 Rev. 5 - 2

Top View

Bar Denotes Gate

and Source Side

1 of 6

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NS = Product Type Marking Code

© Diodes Incorporated

May 2012

)

g

g

g

r

DMP21D5UFB4

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -1.8V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current

Steady

State
t<10s

Steady

State
t<10s

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

-20 V
±8 V

-700

-600

-850

-670

-500

-400

-600

-550

mA

mA

mA

mA

-2 A

-800 mA

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)

Steady state

t<10s 210 °C/W

Steady state

t<10s 100 °C/W

Operating and Storage Temperature Range

P

R

P

R

T

J, TSTG

D

JA

θ

D

JA

θ

0.46 W
279 °C/W

0.95 W
134 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I

Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20 - - V

- - -100 nA

- - ±1.0

- - ±5.0

VGS = 0V, ID = -1mA
VDS = -20V, VGS = 0V

= ±5V, VDS = 0V

V

μA

GS

V

= ±8V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.5 - -1.0 V

- 0.67 0.97

0.7 1.0

- 0.9 1.5

- 1.2 2.0

- 1.5 3.0

- 5 -

|

- 0.7 - S

- -0.75 -1.2 V

VDS = VGS, ID = -250μA

= -5V, ID = -100mA

V

GS

V

= -4.5V, ID = -100mA

GS

V

= -2.5V, ID = -80mA

Ω

GS

V

= -1.8V, ID = -40mA

GS

V

= -1.5V, ID = -30mA

GS

V

= -1.2V, ID = -1mA

GS

VDS = -3V, ID = -100mA

VGS = 0V, IS = -330mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge VGS = -4.5V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMP21D5UFB4

Document number: DS35284 Rev. 5 - 2

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

www.diodes.com

- 46.1 -

- 7.2 -

- 4.9 -

- 14.3 -

- 0.5 -

- 0.09 -

- 0.09 -

-

-

-

-

8.5

4.3

20.2

19.2

2 of 6

V

= 10V, VGS = 0V,

pF

Ω

nC

-

-

-

ns

-

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= -10V, ID = -250mA

V

DS

V

= -3V, VGS = -2.5V,

DD

R

= 300Ω, RG = 25Ω,

L

= -100mA

I

D

May 2012

© Diodes Incorporated